320 NM Search Results

ixys mcc 132 12

Contextual Info: Date: 08.08.2011 IXYS Data Sheet Issue: 1 Thyristor/Diode Modules M## 320 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC 3000 320-30io2 320-30io2 320-30io2 3200 320-32io2 320-32io2 320-32io2 3400 320-34io2 320-34io2 320-34io2 3600 320-36io2 320-36io2 320-36io2

Contextual Info: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei 880 nm (SFH 320 FA)

Q65110A2510

Contextual Info: 2007-05-10 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED®-Gehäuse Version 1.0 SFH 320, SFH 320 FA SFH 320 SFH 320 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)

Contextual Info: 2014-06-04 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED ®-Gehäuse Version 1.2 SFH 320, SFH 320 FA SFH 320 SFH 320 FA / FAG Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)

Contextual Info: 2014-01-14 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED®-Gehäuse Version 1.1 SFH 320, SFH 320 FA SFH 320 SFH 320 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)

diode skn 170 semikron

Abstract: metal rectifier diode skr 130 SKN320 Semikron SKR 20 SKR 870 I18N metal rectifier diode skr 300 SKN 170 DIN41814 RECTIFIER DIODE SKN 2700
Contextual Info: 5EMIKR0N Vrsm Vrrm Ifhms maximum values for continuous operation 700 A IfaV (sin. 180; Tease — 100 C) 420 A V 400 A $ $ _ 200 SKN 320/02 SKR 320/02 400 SKN 320/04 800 SKN 320/08 SKR 320/04 SKR 320/08 - 1200 1400 SKN 320/12 SKN 320/14 SKR 320/12 - 1600

Q62702-P0961

Abstract: Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P3601 Q62702-P3602 Q62702-P390 Q62702-P393
Contextual Info: NPN-Silizium-Fototransistor im SMT TOPLED-Gehäuse Silicon NPN Phototransistor in SMT TOPLED-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei

metal rectifier diode skr 300

Abstract: RECTIFIER DIODE SKN 2700 SKR 870 Semikron SKR diode SKN skn diodes semikron skn 320/02 diode skn 20 semikron skn 320/12 DIN41814
Contextual Info: VRSM VRRM IFRMS maximum values for continuous operation 700 A IFAV (sin. 180; Tcase = 100 °C) 420 A 400 A Rectifier Diodes SKN 320 SKN 400 SKR 320 V 200 400 800 1200 1400 1600 1800 2400 2700 3000 SKN 320/02 SKN 320/04 SKN 320/08 SKN 320/12 SKN 320/14 SKN 320/16

P3601

Abstract: Q62702-P0961 Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P3601 Q62702-P3602 Q62702-P390 Q62702-P393 marking 320 ON
Contextual Info: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei

semikron skn 320/02

Abstract: Semikron SKR 26 /02 Semikron SKR 26 /12 metal rectifier diode skr 300 semikron skn 320/12 high voltage rectifier diode semikron 320/16 semikron skr 320-04 Semikron SKR 40 /12 skn 320/02
Contextual Info: VRSM VRRM IFRMS maximum values for continuous operation 700 A IFAV (sin. 180; Tcase = 100 °C) 420 A 400 A Rectifier Diodes SKN 320 SKN 400 SKR 320 V 200 400 800 1200 1400 1600 1800 2400 2700 3000 SKN 320/02 SKN 320/04 SKN 320/08 SKN 320/12 SKN 320/14 SKN 320/16

SKN 170

Contextual Info: SKN 320/SKR 320 FRMS — 7 0 0 * i SKN 320/04 SKR 320/04* 400 V V rsm 400 V V rrm I fav SKN 320/08 SKR 320/08* I fsm 1400 V 1600 V 800 V 1200 V 1400 V 1600 V 420 A Tcose = 125°C , sin. 180°el 320 A 700 A K 0,55 K 0,55 F K 0,1 F (sin. 180 °el) 195 A

Q65110A2510

Abstract: Q65110A2475
Contextual Info: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich

foto transistor

Abstract: phototransistor 650 nm P1606 sfh 97 Q62702-P0961 Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P390 Q62702-P393
Contextual Info: SFH 320 SFH 320 FA SFH 320 SFH 320 FA fplf6724 fpl06724 NPN-Silizium-Fototransistor im  SMT TOPLED -Gehäuse Silicon NPN Phototransistor in  SMT TOPLED -Package Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale

Q65110A2510

Contextual Info: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich

Contextual Info: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich

Contextual Info: Selection Guide Spectral Response Range nm Features Major Applications Type No. Listed Page I I I I I I 200 400 600 800 1000 1200 Si Photodiodes 1100 190 1000 190 320 1100 730 320 1100 320 UV to IR range, fo r pre cisio n p h o to m e try U V to visib le ra nge w ith

Contextual Info: Datasheet OVR 40-320 d440 P - Rev. 2004-02-11 2CTD432204F1701.pdf OVR 40-320 d440 P Order code : 2CTB 8139 51 R 18 00 Pluggable Unit Electrical characteristics Types of networks OVR 40-320 d440 P Overall dimensions in mm Operating diagram TT - TNS - TNC

IRK 92

Abstract: irk 60 IRKC
Contextual Info: IRK * 320 Series Power Module 320 Amp IRKD IRKC IRKJ IRKE 1 1 1 2 2 2 2 3 3 3 1 Case Style :DOUBLE TOP MAXIMUM RATINGS (Tj = 25 OC unless stated otherwise) * Insert "D" "C" "J" or "E" for circuit configuration Symbol IRK(*) 320-04 Repetitive Peak Reverse Voltage

TLS320

Abstract: tlsr Telefunken LED
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ß^EOO^b ÜDO^Obfl TLS.320. TTlOJipyiMKiKlelectronic T - M- l- S 3 Creative Technologies Symbol LED's — 0 3 m m O in tinted top diffused package Red TLSR 320. GaAsP on GaAs TLSO 320. GaAsP on GaP Yellow T LSY320. GaAsP on GaP

C956

Abstract: E717-21 C956 hamamatsu solar converter dc to dc diagram T106-10-6 E717 E678-11A R7154 6dy5 e717-63
Contextual Info: PHOTOMULTIPLIER TUBE R7154 High Sensitivity Solar Blind Photocathode 160 to 320 nm 28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES Spectral Response . 160 to 320 nm Cathode Sensitivity Radiant at 254 nm . 62mA/W Typ.

Hamamatsu Photomultiplier Tube C6270

Contextual Info: PHOTOMULTIPLIER TUBE R7154 High Sensitivity Solar Blind Photocathode 160 nm to 320 nm 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type FEATURES ●Spectral Response . 160 nm to 320 nm ●Cathode Sensitivity Radiant at 254 nm . 62 mA/W Typ.

ir remote power meter

Abstract: spectrophotometer G1746
Contextual Info: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry

E17A

Abstract: SKR 870 diode skn 170 semikron semikron skn 320/02 Semikron SKR320 skn diodes B832 DIN41814 semikron skr 100 DO-200
Contextual Info: S1E D • B13fc.fc.71 0003670 533 « S E K G SEMIKRDN SENIKRON INC V rsm Ifrms maximum values for continuous operation V rrm 700 A SKN 320 SKR 320 SKN 400_ IfaV (sin. 180; Tease = 100 °C) 420 A V 200 400 800 1200 1600 1800 2400 2700 3000 SKR 320/02

S5052

Abstract: S5673
Contextual Info: Si PIN Photodiodes 3 Dimensional Spectral Response Range Peak Sensitivity Wavelength Area X Xp (mm) (mm2) (nm) (nm) 320 to 1000 800 0.46 (>3.0 7.0 320 to 1060 920 0.53 960 0.56 920 0.65 Active Area Effective Active Type No. Outline Package (P.52) Size S5052