31IUM Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67J618 Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs T h e M C M 6 7 J 6 1 8 is a 1,179,648 bit s y n c h ro n o u s static random a c c e s s m em ory de­

Contextual Info: MOTOROLA Order this document by MCM67B618A/D SEMICONDUCTOR TECHNICAL DATA MCM67B618A 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM67B618A is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high-performance, secondary cache

mcm511000ap10

Abstract: M511000 M511000A mcm511000a MCM511000AZ10 Z13i MCM511000AZ80 M-511 511000a CM511000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM511000A MCM51L1000A Advance Information 1 M x 1 C M O S Dynam ic RAM The MCM511000A is a 1.0/* CMOS high-speed, dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated with CMOS silicon-gate process

LSK 331

Abstract: QML-38534
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA A_ Corrections to table 98-03-23_ K. A. Cottonqim B_ Add device type Rav Monnin

Contextual Info: High-Reliability CMOS LSI Devices_ CDP1802A/3, CDP1802AC/3 High-Reliability CMOS 8-Bit Microprocessor For U s j in Aerospace, Military, and Critical Industrial Equipment Fe a tu re s • M inim um instruction fetch-execute tim e o f 2.2 fjs m axim um c lo c k

MSM514266

Contextual Info: O K I semiconductor MSM514266B_ 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The M S M 514266B is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the M SM 514266B is O K I’s C M O S silicon gate process technology.

3a0c

Abstract: 2164 dram MCM54410A MCM54410A-60 MCM54410A-70 MCM54410A-80
Contextual Info: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA MCM54410A Advance Information 1M x 4 CMOS Dynamic RAM N PACKAGE 300-MIL SOJ CASE 822 Write Per Bit Mode The MCM54410A is a 0.7n CMOS high-speed, dynam ic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS siiicon-gate process

M41464

Abstract: M 41464 41464 MCM41464A-10 F256B mcm41464 MCM41464A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM41464A Advance Information 6 4 K x 4 Dynam ic RAM T h e M C M 41464 A is a 262,144 b it, high-speed, d y n a m ic random access m em o ry. O rganized as 68,536 w o rd s o f 4 b its , and fa b ric a te d u sing N -chan nel s ilic o n -g a te M O S

A9RV

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54170B MCM5L4170B MCM5V4170B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The MCM54170B is a 0.6n CMOS high-speed dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS siiicon-gate process

0WXXX

Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD4216100, 4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The |iPD4216100, 4217100 are 16 777 216 words by 1 bit dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 16 777 216 w o rd s by 1 b it organiza tion

Contextual Info: NEC MOS INTEGRATED CIRCUIT /iPD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTIO N The |iPD4216400, 4217400 are 4 194 304 words by 4 bits dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 4 194 304 w o rd s by 4 bits organization

Contextual Info: NEC M O S INTEGRATED CIRCUIT /¿ P D 4 2 1 6 8 0 5 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The /iPD4216805 is a 2 097 152 words by 8 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

mcm41464

Abstract: 41464AP12 41464AP-12
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M C M 41464A Advance Information 64K x 4 Dynamic RAM T h e M C M 4 1 4 6 4 A is a 2 62 ,144 b it, h ig h -s p e e d , d y n a m ic ra n d o m access m e m o ry . O rg a n ize d as 6 5 ,536 w o rd s o f 4 b its , and fa b ric a te d u sing N -c h a n n e l s ilic o n -g a te M O S