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    31C7 Search Results

    31C7 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TMAG5131C7DQDBZRQ1
    Texas Instruments Automotive low-power (10 Hz, 1 µA) low-voltage (down to 1.65 V) Hall-effect switch 3-SOT-23 -40 to 125 Visit Texas Instruments
    SF Impression Pixel

    31C7 Price and Stock

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    TDK Corporation B41231C7109M60

    Snap-in 10000uF 35V - Boxed Product (Development Kits) (Alt: B41231C7109M060)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas B41231C7109M60 Box 36 Weeks 320
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    • 10000 $1.99
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    Avnet Abacus B41231C7109M60 33 Weeks 320
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    Torex Semiconductor LTD XC9244A31C7R-G

    DC / DC Switching Regulator, Fixed, 1 Output, Buck (Step Down), 2.3 V to 6 V, USPN, 6 Pins - Tape and Reel (Alt: XC9244A31C7R-G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas XC9244A31C7R-G Tape & Reel 16 Weeks 5,000
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    Torex Semiconductor LTD XC6129C31C7R-G

    Voltage Supervisor, 3.1V, 1.3 V to 6 V, CMOS, USPN, 4 Pins, Surface Mount, -40 ?C - Tape and Reel (Alt: XC6129C31C7R-G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas XC6129C31C7R-G Tape & Reel 16 Weeks 5,000
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    Murata Manufacturing Co Ltd GCM31C7U3A102JX03K

    SMD Multilayer Ceramic Capacitor, 1000 pF, 1 kV, 1206 [3216 Metric], ? 5%, U2J, GCM Series, 3.2 mm - Tape and Reel (Alt: GCM31C7U3A102JX03K)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GCM31C7U3A102JX03K Tape & Reel 16 Weeks 8,000
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    TME GCM31C7U3A102JX03K 8,000
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    Avnet Abacus GCM31C7U3A102JX03K 23 Weeks 8,000
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    TDK Corporation B41231C7828M060

    SNAP-IN 8200UF 35V - Boxed Product (Development Kits) (Alt: B41231C7828M060)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas B41231C7828M060 Box 40 Weeks 320
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    31C7 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STK12C88 SimTEK 32K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times • Store to EEPROM initiated by Hardware, Soft­ ware or AutoStore™ on Power Down • Recall to SRAM Initiated by Hardware Reset,


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    stk12c88200ns40-pin PDF

    303F

    Abstract: PDIP28 U637256 ZMD AG
    Contextual Info: U637256 CapStore 32K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U637256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


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    u637256d-01109d-01101303f+2pdip28zmd ag PDF

    Plastic 32-pin 300 mil SOIC

    Abstract: STK14C88-345 303F STK14C88-3
    Contextual Info: STK14C88-3 32K x 8 AutoStore nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • “Hands-off” Automatic STORE with External 68µF Capacitor on Power Down • STORE to EEPROM Initiated by Software or AutoStore™ on Power Down


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    stk14c88-3200ns100-year32-pin+3plastic 32-pin 300 mil soicstk14c88-345303f PDF

    STK14C88

    Abstract: STK15C88 STK16C88 STK16C88-25 STK16C88-35 STK16C88-45
    Contextual Info: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems


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    stk16c88200ns100-year28-pin+5stk14c88stk15c88stk16c88-25stk16c88-35stk16c88-45 PDF

    303F

    Contextual Info: UL634H256 Low Voltage PowerStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 35 and 45 ns Access Times ‡ 15 and 20 ns Output Enable Access Times ‡ ICC = 8 mA typ. at 200 ns Cycle


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    ul634h256303f PDF

    Contextual Info: U 63 5 H 2 5 6 SOFTWARE NONVOLATILE RECALL HARDWARE PROTECT A RECALL cycle of the EEPROM data into the SRAM is initiated with a sequence of READ operations in a manner similar to the STORE initiation. To initiate the RECALL cycle the following sequence of READ opera­


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    u635h256 PDF

    Contextual Info: U 63 1 H 2 5 6 A v a i l a b l e in Q1 /97 Software Controlled 32Kx 8 nvSRAM Features Description □ High-performance CMOS non­ volatile static RAM 32768 x 8 bits □ 25, 35 and 45 ns Access Times □ 1 0 ,15 and 20 ns G-Access □ Software STORE Initiation


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    m3015pdip28u631h256 PDF

    STK14C88-3NF35I

    Abstract: SOP32 data sheet STK14C88-3 Simtek STK14C88
    Contextual Info: STK14C88-3 32Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 35, 45 ns Read Access & R/W Cycle Time The Simtek STK14C88-3 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance


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    stk14c88-332kx8256kbml0015+3stk14c88-3nf35isop32 data sheetsimtek stk14c88 PDF

    16C88

    Abstract: architecture of TMS320C52 5v sram simtek NVSRAM to 15c 10k STK11C88 STK15C88 STK16C88 TITMS320
    Contextual Info: Applying the STK11C88, STK15C88 and STK16C88 32K x 8 nvSRAM Abstract SRAM Operations Simtek Corporation’s family of high speed 256 kilobit nonvolatile Static Random Access Memories includes the STK15C88 AutoStore and STK11C88 Software Store and STK16C88


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    stk11c88stk15c88stk16c8816c88+5architecture of tms320c525v sram simteknvsramto 15c 10ktitms320 PDF

    diode 6a4

    Abstract: U631H256SM 303F
    Contextual Info: U631H256xSM Advanced Information SoftStore 32K x 8 nvSRAM Customized Product Features Description F High-performance CMOS nonvolatile static RAM 32768 x 8 bits F 35 ns Access Time F 15 ns Output Enable Access Time F Software STORE Initiation F Automatic STORE Timing


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    u631h256xsmm3015d-01109d-01101+3diode 6a4u631h256sm303f PDF

    303F

    Abstract: PDIP28 U637256
    Contextual Info: U637256 Preliminary CapStore 32K x 8 nvSRAM Features Description F CMOS non- volatile static RAM 32768 x 8 bits F 70 ns Access Time F 35 ns Output Enable Access Time F I = 15 mA at 200 ns Cycle Time F Unlimited Read and Write Cycles to SRAM F Automatic STORE to EEPROM


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    u637256d-01109d-01101303f+1pdip28 PDF

    Contextual Info: STK14C88-M 32 K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM MIL-STD-883 SM1TEK PRELIMINARY FEATURES DESCRIPTION • 35ns and 45ns SRAM Access Times The Simtek STK14C88-M is a fast static RAM with a nonvolatile, electrically-erasable PROM element


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    stk14c88-mmil-std-883a274flfl7stk14c88+132-pin PDF

    Contextual Info: STK15C88 32K x 8 AutoStoré nvSRAM High Performance CMOS Nonvolatile Static RAM SlfflTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times The Simtek STK15C88 is a fast static RAM with a nonvolatile, electrically-erasable PROM element


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    stk15c88fl274fla7fl274fl PDF

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


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    90f8548sdp8600-00195f5325sdp8371-001+1628h584928h5850opb933w55z08f2750opb963t5508f2755a 69157 scr65k5heds 5300hcpl-900j-000ehcpl 0636dt 8210 ichcpl788hcpl 1360heds 821083k3 PDF

    oz960

    Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
    Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO


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    mpc7450oz96016b3 zener diodezener 13b3+7zener diode 7a3sn02106r-p1016b1 zener diodezener diode 13b3q59 applec5763 PDF

    RTL8211E

    Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
    Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


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    rtl8211emarvell 88e1116rtc7sz08afeapetla-6t213hf+6c585588e1116r57b8pp3v42ntc 15d-7u9701 PDF

    sil1162

    Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
    Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM


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    mpc7450200pinrpak10p2c1000bt+11sn74auc1g04sil1162diode 31d8 0631d8 diodec828 3-pin transistor2n7002dw3 pin hall effect sensor u58hall effect sensor u58zener 12a2powerbookbubba oscillator schematic PDF

    ISL9504

    Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
    Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS


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    isl9504foxconn applear9350c4722+6l8400c8450c7550d6905foxconnm33 sot23-5 PDF

    SOT23-5 AE31

    Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
    Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS


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    sot23-5 ae31c9450ar9350zh510+6m5621c4722ferr-120-ohm-16a4 mic dioded6905c8450 PDF

    U631H256SM

    Abstract: 303F U631H256 ZMD AG
    Contextual Info: Advanced Information U631H256xSM Customized Product SoftStore 32K x 8 nvSRAM Features Description F High-performance CMOS non- The U631H256SM has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to


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    u631h256xsmu631h256smd-01109d-01101+3303fu631h256zmd ag PDF

    STK14C88-C45I

    Abstract: STK14C88-5C35M CDIP32 STK14C88-NF25
    Contextual Info: STK14C88 32 K x 8 AutoStore nvSRAM Features Description • 25, 35, 45 ns read access and R/W cycle time ■ Unlimited read/write endurance The Cypress STK14C88 is a 256 Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each


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    stk14c88stk14c88-c45istk14c88-5c35mcdip32+1stk14c88-nf25 PDF

    STK14C88-NF35U

    Abstract: SIMTEK CORPORATION 303F Plastic 32-pin 300 mil SOIC NVSRAM
    Contextual Info: STK14C88-NF35U 32Kx8 AutoStore nvSRAM with extended temperature FEATURES DESCRIPTION • 35 ns Read Access & R/W Cycle Time The Simtek STK14C88-NF35U is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell.


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    stk14c88-nf35u32kx8256kbml0066+4simtek corporation303fplastic 32-pin 300 mil soicnvsram PDF

    STK11C88-3

    Abstract: 303F
    Contextual Info: STK11C88-3 32K x 8 nvSRAM 3.3V QuantumTrap CMOS Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • Operating VCC Range: 3.0V-3.6V The Simtek STK11C88-3 is a fast static RAM with a nonvolatile, electrically erasable PROM element incorporated in each static memory cell. The SRAM


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    stk11c88-328-pin303f PDF

    303F

    Abstract: PDIP28 U637256
    Contextual Info: U637256 Preliminary CapStore 32K x 8 nvSRAM Features Description 5 CMOS non- volatile static RAM 32768 x 8 bits 5 70 ns Access Time 5 35 ns Output Enable Access Time 5 ICC = 15 mA at 200 ns Cycle Time 5 Unlimited Read and Write Cycles to SRAM 5 Automatic STORE to EEPROM


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    u637256d-01109d-01101303f+1pdip28 PDF