31MAR03 Search Results

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Contextual Info: r ' THIS DRAWING IS UNPUBLISHED. COPYRIGHT 1978 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. MAY ,1 9 7 8 . LOC ALL RIGHTS RESERVED. DIST REVISIONS J LTR DATE DWN APVD 31MAR03 H.T I.E DESCRIPTION REVISED FJBO— 0 2 4 5 — 03 D LOCKING £

Contextual Info: 4 T H IS DRAWING IS U N P U B LIS H E D . 3 RELEASED FOR PUBLICATIO N ALL COPYRIGHT RIGHTS LOC RESERVED. HC BY TYCO ELECTRONICS CORPORATION. D IS T REVISIONS 00 LTR DE SC R IPTIO N DWN DATE RELEASED. APVD JGH JGH 31MAR03 D D 12.75 [ . 5 0 2 ] ACROSS CORNERS

Contextual Info: r n THIS DRAWING IS UNPUBLISHED. COPYRIGHT 1977 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. MAY ,1977- LOC /\ DIST J ALL RIGHTS RESERVED. R E V IS IO N S LTR R ± 0.2 1.9. D □ i ' i DWN APVD REVISED FJBO— 0 9 7 3 — 0 3 31MAR03 H.T LE

29 f 032

Contextual Info: r' T H IS DRAW IN G IS U N P U B L IS H E D . R E LEA S ED FOR P U B LIC A TIO N A L L R IG H TS COPYRIGHT 19 B 4 MAR , 1 9 8 4 . L0C RESER VED. REVISIONS D IS T 3EE J B Y TYCO ELECTRONICS CORPORATION. LTR D E S C R IP T IO N REVISED FJB0—0 2 4 5 —03

M48T35Y

Abstract: M48T35 SOH28
Contextual Info: M48T35 M48T35Y 5.0V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

M48T512V

Abstract: M48T512Y
Contextual Info: M48T512Y M48T512V* 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

Contextual Info: Alle Bechle torbehallen/ I I I ri§lls reserved 5 2 3 k 1 Moting loce occording lo MIL-C-24308 / DIN 41 652 / CECC 75301-802 No.l conloct D X 0,64 CM P r i n t e d board l ayout , component si de CO a* n n n n n n n n n n n n X o £ lr> 63,5 *o,i B 69,8 max

SUV85N10-10

Contextual Info: SUV85N10-10 New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0105 @ VGS = 10 V 100 D TrenchFETr Power MOSFET D 175_C Junction Temperature ID (A) APPLICATIONS 85 a 0.012 @ VGS = 4.5 V D DC/DC Primary Side Switch

Si4971DY

Abstract: Si4971DY-T1
Contextual Info: Si4971DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.026 @ VGS = - 10 V - 7.2 0.033 @ VGS = - 6 V - 6.4 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation

Si4973DY

Abstract: Si4973DY-T1
Contextual Info: Si4973DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.023 @ VGS = - 10 V - 7.6 0.029 @ VGS = - 6 V - 6.8 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation

M440T1MV

Contextual Info: M440T1MV 3.3V, 32 Mbit 1024 Kbit x 32 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V ± 10% INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL PRECISION POWER MONITORING AND

SUM70N06-11

Contextual Info: SUM70N06-11 New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.011 70 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive and Industrial

Contextual Info: Si4973DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.023 @ VGS = - 10 V - 7.6 0.029 @ VGS = - 6 V - 6.8 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation

Contextual Info: SUM70N06-11 New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.011 70 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive and Industrial

AN934

Abstract: M48T512V M48T512Y
Contextual Info: M48T512Y M48T512V* 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE,

Si7344DP-T1

Abstract: Si7344DP 72128
Contextual Info: Si7344DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.008 @ VGS = 10 V 17

M440T1MV

Abstract: 1m x 8 sram
Contextual Info: M440T1MV 3.3V, 32 Mbit 1024 Kbit x 32 TIMEKEEPER SRAM FEATURES SUMMARY • 3.3V ± 10% ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■

Contextual Info: tile techie vorbelullen/ i l l rights resertei 3 ^ P r i n t e d board l ayout , component side Deloil. 09564525613 09564527613 Part number 0.76 m Au 3 Perform ance level 31485 16-04-03 S .H . Insp. 31479 31-MAR-03 S .H . Slond. 31352 16-OCT-02 S .H . 31064

CP2026

Abstract: m48t35
Contextual Info: M48T35 M48T35Y 5V, 256 Kbit 32 Kb x8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT AND BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE,

Contextual Info: M48T559Y 5.0V, 64 Kbit 8 Kbit x8 TIMEKEEPER SRAM with Address/Address/Data Multiplexed FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SOFTWARE and HARDWARE RESET FOR WATCHDOG TIMER REGISTER COMPATIBLE WITH M48T59 TIMEKEEPER SRAM ADDRESS/ADDRESS/DATA MULTIPLEXED

M48T559Y

Abstract: M48T59 M4T28-BR12SH SOH28
Contextual Info: M48T559Y 5.0V, 64 Kbit 8 Kbit x8 TIMEKEEPER SRAM with Address/Address/Data Multiplexed FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SOFTWARE and HARDWARE RESET FOR WATCHDOG TIMER REGISTER COMPATIBLE WITH M48T59 TIMEKEEPER SRAM ADDRESS/ADDRESS/DATA MULTIPLEXED

trans* 72151

Abstract: 72151 Si4392DY 72151 mos-fet s t r 72151 Si4392DY-T1
Contextual Info: Si4392DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0115 @ VGS = 10 V 12.5 0.0165 @ VGS = 4.5 V

Si2331DS

Abstract: E1 marking 7215-2 E1 marking code 72152
Contextual Info: Si2331DS New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.048 @ VGS = - 4.5 V - 3.6 0.062 @ VGS = - 2.5 V - 3.2 0.090 @ VGS = - 1.8 V - 2.7 APPLICATIONS D Load Switch

Si4441EDY

Abstract: Si4441EDY-T1
Contextual Info: Si4441EDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D ESD Protected: 2500 V rDS(on) (W) ID (A) 0.016 @ VGS = - 10 V - 10.6 APPLICATIONS 0.026 @ VGS = - 4.5 V - 8.3 D Battery and Load Switching