318Q Search Results

GH1-218QG

Abstract: GH1-218QH GH1-218QK GH1-218QX GH1-318QA GH1-318QB GH1-318QD GH1-318QE GH1-418QC GH1-418QF
Contextual Info: 页码，1/1 GH1电感式接近开关 18 15 外形编号 检测距离Sn[mm] 具 备 型 号 NPN 常开 GH1-318QA NPN 常闭 GH1-318QB NPN 一开一闭 GH1-418QC DC PNP 常开 型 PNP 常闭 GH1-318QD GH1-318QE PNP 一开一闭 GH1-418QF 二线制 常开

27CX641

Abstract: 27CX641-45 UNIPAK
Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX641 /27CX642 8,192 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammabillty • Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing

27H256-25

Abstract: CY27H256 H256-4 27H256-30 318Q H2564 OTICO
Contextual Info: fax id: 3014 —— — Æ j r r ~ 'f V D I 1 CY27H256 D 17 Q Q IT C O O 32K X 8 High-Speed CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage com­ bined with 40-MHz performance. The CY27H256 is available

CY27H010-45PC

Abstract: CY27H010-55Wmb 27H010 CY27H010
Contextual Info: CY27H010 « r CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

vic 6567

Abstract: M5Y4 vic ii 6569 M5C1 6567 commodore 128 full color dot matrix 8 x 8 commodore M6C2 PAL-N-6572
Contextual Info: COMMODORE SEMICONDUCTOR 73 DËJ 22^4173 0000133 4 D ~33~0? C o m m o d o r e S e m ic o n d u c t o r G r o u p C s q subsidiary of Commodore Business Machines, Inc. 6567 VIDEO IHTKRFACE CHIP SPECIFICATION SHEET General Description; The 6567 Video Interface Chip VIC II is a multi-purpose video

27H256

Abstract: mil std 1275 power supply H-256 H2565
Contextual Info: PRELIMINARY 32K X Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

Contextual Info: CY27H512 PRELIMINARY ^ /C Y P R E S S 64K X Features • CMOS for optimum speed/power • High speed — t.4A = 25 ns max. commercial — t^A — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

Contextual Info: fax id: 3014 * /^ iv n n n n r 1 ''"nmZBiiig JT L l i OY27H256 ililu D 32K x 8 High-Speed CMOS EPROM Features 28-pin, 600-m il DIP, 32-pin LC C and PLCC, and 28-pin TSO P-I packages. T hese de vice s offer high -den sity storage co m ­ bined w ith 4 0 -M H z perform ance. The C Y 27H 256 is available

27CX010C-45

Abstract: 27CX010C-55 27CX010C-70 UNIPAK
Contextual Info: , INC._ 27CX010 1M 128K x 8 CMOS High-Speed EPROM Features Reprog rammabllity — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing Advanced CMOS EPROM Technology High Performance

Contextual Info: i - » f CY27H010 CYPR ESS 128K X8 High-Speed CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — Iaa = 25 ns max. commercial — tAA — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

Contextual Info: ¿/iiuiu. luööutiy, rwufucuy io, Revision: August 18,1994 ^ CYPRESS CY27H010 128K X 8 High-Speed CMOS EPROM Features Functional Description • CMOS for optimum speed/power • Highspeed — tAA = 25 ns max. commercial — *a a = 35 ns max. (military)

H256

Abstract: CY27H256 H256-4 27H256-25
Contextual Info: fax id: 3014 CY27H256 — —— Æ r~'fV D D 17 Q Q jr I 1 IT COO 32K X 8 High-Speed CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage com­ bined with 40-MHz performance. The CY27H256 is available

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX321 /27CX322 4,096 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammablllty Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing

30pFJ

Abstract: 27CX161-45 ZD 260 CS3 16 equivalent
Contextual Info: ÄK 27CX16 1 / 1 6 2 16Kbit CMOS H igh-Speed UV-Erasable PROM FEATURES ITTL-Compatible I/O IReprogrammability — Adds convenience, reduces costs — Windowed package for UV erasure —Allows 100% factory testing •Bipolar PROM replacement — Pin-compatible with Bipolar PROMs

H256

Abstract: CY27H256 2411AS
Contextual Info: Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

CY27H010-45PC

Abstract: 27H010-70 27H010-45 27H010 CY27H010
Contextual Info: ^ 0 CY27H010 CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

27H256-30

Abstract: CY27H256 H2568 27H256-55
Contextual Info: Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the