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    30N60F Search Results

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    Rochester Electronics LLC NGTB30N60FWG

    IGBT TRENCH 600V 60A TO-247-3
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    DigiKey NGTB30N60FWG Tube 119
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    onsemi NGTB30N60FWG

    IGBT TRENCH 600V 60A TO-247-3
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    Rochester Electronics NGTB30N60FWG 7,834 1
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    onsemi NGTG30N60FWG

    IGBT TRENCH 600V 60A TO-247-3
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    Rochester Electronics LLC SGW30N60FKSA1

    IGBT NPT 600V 41A TO247-3
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    DigiKey SGW30N60FKSA1 Bulk 81
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    Infineon Technologies AG SGW30N60FKSA1

    IGBT NPT 600V 41A TO247-3
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    Rochester Electronics SGW30N60FKSA1 117 1
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    30N60F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    30N60FL

    Abstract: NGTB30N60FLWG
    Contextual Info: 30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original
    NGTB30N60FLWG NGTB30N60FLW/D 30N60FL PDF

    30N60FL

    Contextual Info: 30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original
    NGTB30N60FLWG NGTB30N60FLW/D 30N60FL PDF

    30N60F

    Abstract: NGTB30N60FWG
    Contextual Info: 30N60FWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original
    NGTB30N60FWG NGTB30N60FW/D 30N60F PDF