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    onsemi NGTB30N60FLWG

    IGBT TRENCH FS 600V 60A TO-247
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    onsemi NGTG30N60FLWG

    IGBT TRENCH FS 600V 60A TO-247-3
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    Rochester Electronics LLC NGTG30N60FLWG

    IGBT TRENCH FS 600V 60A TO-247-3
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    30N60FL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    30N60FL

    Abstract: NGTB30N60FLWG
    Contextual Info: 30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTB30N60FLWG NGTB30N60FLW/D 30N60FL PDF

    30N60FL

    Contextual Info: 30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTB30N60FLWG NGTB30N60FLW/D 30N60FL PDF