30MHZ 150W Search Results

150w

Abstract: MAPF-250128-150000 mapf250128
Contextual Info: MAPF-250128-150000 Linear RF Power TMOS 150W, 30MHz 100V M/A-COM Products Preliminary - Rev. 1108 Features • Designed for Industrial, Scientific, Medical applications • N-Channel enhancement mode MOSFET • Specified 100V, 30MHz and 128MHz, Class AB • Internally insulated Source terminals simplify

Contextual Info: MAPF-250128-150000 Linear RF Power TMOS 150W, 30MHz 100V M/A-COM Products Preliminary - Rev. 1108 Features • Designed for Industrial, Scientific, Medical applications • N-Channel enhancement mode MOSFET • Specified 100V, 30MHz and 128MHz, Class AB • Internally insulated Source terminals simplify

Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)

2SC2510

Abstract: 2sc2510 transistor application
Contextual Info: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)

E5OU

Abstract: 2-13B1A Ferrite core TDK 2SC2510 50wv 10ID 1S1555
Contextual Info: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)

j4315

Abstract: 2sc5200 Spice Models 2SC5200 2sc5200 amplifier circuit FJL4315RTU TRANSISTOR 2SC5200 C5200O J4315O FJL4315OTU 2SC5242* datasheet
Contextual Info: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Fequency : 30MHz.

Ferrite core TDK

Abstract: 2sc2510
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2 '30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE Unit in mm FEATURES: . Specified 28V, 28MHz Characteristics : Output Power : P o =150Wp e P : Minimum Gain : Gpe=12.2dB : Efficiency : ^c=35%(Min.)

j4215

Abstract: 2sa1943 transistor A1943 2sa1943 amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 2sa1943 Spice Models 2sc5200 amplifier J4215O 2sC5200, 2SA1943
Contextual Info: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A. High Power Dissipation : 150watts. High Frequency : 30MHz.

j4215

Abstract: A1943 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor J4215O 2SA1943 J4215R 2sa1943 amplifier 2sC5200, 2SA1943 spice model 2SC5200
Contextual Info: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Frequency : 30MHz.

2SC2510A

Abstract: 2sc2510 transistor application 2SC2510
Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)

j4315

Contextual Info: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz.

j4215

Abstract: 2sa1943 2sc5200 amplifier circuit amplifier design 2SA1943 2sC5200, 2SA1943 A1943 2sa1943 transistor 2SC5200
Contextual Info: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Fequency : 30MHz.

j4315

Abstract: c5200 2sc5200 amplifier circuit J4315O 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sc5200 Spice Models 2sc5200 amplifier 2sc5200 transistor 2sc5200 amplifiers
Contextual Info: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz.

j4215

Abstract: amplifier design 2sc5200 2sa1943 A1943 2sa1943 2sc5200 audio circuit spice 2sc5200 2sC5200, 2SA1943 spice model 2SC5200 2sa1943 2sa1943 amplifier J4215O
Contextual Info: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Frequency : 30MHz.

j4315

Abstract: C5200 2sc5200 amplifier circuit power amplifier 2sc5200 2sa1943 TRANSISTOR j4315o 2sc5200 2sc5200 transistor use audio amplifiers amplifier 2sC5200, 2SA1943 2sc5200 transistor FJL4315RTU
Contextual Info: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz.

2SC2510

Contextual Info: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.)

2SC2510

Abstract: 2SC2510A
Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)

MRF428

Contextual Info: MRF428 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

Contextual Info: MRF428 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 50V M/A-COM Products Released - Rev. 07.07 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

MRF429

Abstract: 30MHZ 150W MRF429 equivalent RF POWER TRANSISTOR 150w
Contextual Info: MRF429 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

Contextual Info: MRF429 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 50V M/A-COM Products Released - Rev. 07.07 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

VRF151

Abstract: vertical mosfet RF POWER VERTICAL MOSFET
Contextual Info: 150W, 50V, 175MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF151 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V

VRF150

Abstract: hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET
Contextual Info: 150W, 50V, 150MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF150 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V 150W WITH 18dB MIN GAIN @ 30MHz, 50V

MRF422

Abstract: 28v 30MHZ MRF422 datasheet 28v 150w 30MHZ
Contextual Info: MRF422 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for applications as a high–power linear amplifier from 2.0 Product Image to 30 MHz. • • • Specified 28 V, 30 MHz characteristics —