30MAY94 Search Results

2N7085

Contextual Info: 2N7085 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.075 20 TO-257AB Hermetic Package D G Case Isolated S G D S N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol

2N7076

Contextual Info: 2N7076 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 200 0.10 28 TO-254AA Hermetic Package D G Case Isolated S D S G N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol

SMP60N06-14

Abstract: SMP60N06 70281 SMP60N06-14 equivalent SUP60N06
Contextual Info: SMP60N06-14 N-Channel Enhancement-Mode Transistor Product Summary VDS V rDS(on) (W) ID (A) 60 0.014 60 See lowerĆcost version: SUP60N06Ć14 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: PRODUCT NO SEE TABLE REV OESOPTON A HLSD EGRS303U COR J «067 B 2 • -' C POS 1 2.0 *o.i NON ACCUM 3 I1 Ì9 Ì0 Ì9 1 III| 1 IIS ii ii n v min si POS etx s t o r n EGR s 70071 flETO BY DATE BS LOW m m j y j KTNCAI 2 M A T K BS LOW B A N K BS LOW hsrw n ?

SMP60N06-18

Abstract: SMP60N06 SUP50N06-18 SMP60N06-18 power mosfet SUP50N06
Contextual Info: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SMP60N06-18

Abstract: SMP60N06 SMP60N06-18 power mosfet data sheet SMP60N06 SUP50N06 SUP50N06-18
Contextual Info: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

2N7078

Contextual Info: 2N7078 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 500 0.40 13 D TO-254AA Hermetic Package G Case Isolated S D S G N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol

SMP60N06-18 power mosfet

Abstract: SMP60N06-18 sup50n06-18 SUP50N06 D 1437 transistor
Contextual Info: Tem ic SMP60N06-18 S em i co n d u c t or s N-Channel Enhancement-Mode Transistor, 18-mQ ros on Product Summary VDS (V) 60 VIS Id (A) r DS(on) ( ^ ) 0.018 60 See lower-cost version: SUP50N06-18 D Q T0-220AB o cJi DRAIN connected to TAB Ö s GD S Top View

2N7091

Contextual Info: 2N7091 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.20 –14 TO-257AB Hermetic Package S G Case Isolated D G D S P-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter

2N7079

Contextual Info: 2N7079 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.210 –17 TO-254AA Hermetic Package S G Case Isolated D D S G P-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter