30J4505 Search Results

GTO ABB 5SGA 2046

Abstract: IG 2200 19
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

Contextual Info: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 25 VT0 = 1.90 rT = 0.53 VDClink = 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB 5SGA

Abstract: ABB thyristor 5 GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 25 1.90 0.53 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

5SDF01R2501

Abstract: 5SGA 5SGA30J2501 RTK 031
Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­

ABB 5SGA

Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s