30B DIODE Search Results

BUK75

Abstract: BUK753R4-30B BUK763R4-30B
Contextual Info: BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 — 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS technology.

30B DIODE

Abstract: diode 3.0b
Contextual Info: 1300nm Edge Light emitting Diode EDO-S-30B-X-LG Features • -20 to 70ºC operating temperature • Hermetically sealed active component • To-18 packaging with a flat window cap • RoHS compliance available Absolute Maximum Rating Tc=25ºC Parameter

OF TRANSISTOR AT 30B

Abstract: BUK9E04-30B
Contextual Info: BUK9E04-30B TrenchMOS logic level FET Rev. 01 — 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Contextual Info: High Power 1300nm Edge Light emitting Diode EDO-L-30B-X-LG Features • -20 to 70ºC operating temperature • Hermetically sealed active component • To-18 packaging with a flat window cap • RoHS compliance available Absolute Maximum Rating Tc=25ºC

BUK9507-30B

Abstract: BUK9607-30B DATASHEET OF TRANSISTOR AT 30B
Contextual Info: BUK95/9607-30B TrenchMOS logic level FET Rev. 01 — 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

Contextual Info: IC1027-30B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.27p‘ C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage100 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)500m Semiconductor MaterialSilicon Package StyleSIP

Power and Industrial Semiconductors

Contextual Info: PSMN003-30P; PSMN003-30B N-channel enhancement mode field-effect transistor Rev. 01 — 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

30b1 diode

Abstract: BUK9Y11-30B
Contextual Info: BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

Contextual Info: BUK75/762R7-30B TrenchMOS standard level FET Rev. 02 — 2 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Contextual Info: BUK95/962R8-30B TrenchMOS logic level FET Rev. 02 — 14 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

30B3 diode

Abstract: 30b4 30B2 diode 30B4 diode 30B3
Contextual Info: BUK7Y20-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

30B3 diode

Abstract: 30B3 30B2 diode 30b1 diode 30-B3
Contextual Info: BUK7Y20-30B N-channel TrenchMOS standard level FET Rev. 03 — 17 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

Contextual Info: BUK7Y07-30B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

BUK762R7-30B

Abstract: BUK752R7-30B BUK7E2R7-30B
Contextual Info: BUK75/76/7E2R7-30B TrenchMOS standard level FET Rev. 03 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

NT 407 F TRANSISTOR

Abstract: SMD code E2 BTS442E2 E3062A 1S42 E3043 Q67060-S6206-A2 Q67060-S6206-A3 ZD11 BTS and MS transistor smd code 404
Contextual Info: I Û235LG5 G0fll53b 30b SIEM ENS PROFET BTS 442 E2 Smart Highside Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation

OF TRANSISTOR AT 30B

Abstract: 12233 BUK9207-30B
Contextual Info: BUK9207-30B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

OF TRANSISTOR AT 30B

Abstract: BUK7207-30B 03nk80
Contextual Info: BUK7207-30B TrenchMOS standard level FET Rev. 02 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK7507-30B

Abstract: BUK7607-30B
Contextual Info: BUK75/7607-30B TrenchMOS standard level FET Rev. 01 — 07 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK75

Abstract: BUK7E2R7-30B
Contextual Info: BUK7E2R7-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK9Y07-30B N-channel TrenchMOS logic level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK752R7-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: Û2 35b05 000153b 30b • SIEM ENS PROFET BTS 442 E2 Smart Highside Power Switch Features Product Summary • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection including load dump • Fast demagnetization of inductive loads

10a 24v ultra fast diode

Abstract: GSS4224
Contextual Info: Pb Free Plating Product ISSUED DATE :2005/04/12 REVISED DATE :2005/09/30B GSS4224 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 14m 10A Description The GSS4224 provide the designer with the best combination of fast switching, ruggedized device design, ultra

GSC4435

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE :2005/09/30B GSC4435 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 20m -8A Description The GSC4435 provide the designer with the best combination of fast switching, ruggedized device design, low