30APR12 Search Results

SI1443EDH

Abstract: marking code bt S1209
Contextual Info: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET

si8406

Contextual Info: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management

Contextual Info: SiB433EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 Qg (Typ.) 7.6 nC PowerPAK SC-75-6L-Single • TrenchFET Power MOSFET

Contextual Info: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET

S1209

Abstract: SiS890DN
Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm

SiB433EDK

Contextual Info: SiB433EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 Qg (Typ.) 7.6 nC PowerPAK SC-75-6L-Single • TrenchFET Power MOSFET

Contextual Info: New Product SiR818ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0025 at VGS = 10 V 50 0.0030 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 39 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

Contextual Info: New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V

Contextual Info: 1 2 3 4 5 CHARACTERISTICS: MATERIAL: COLOR: BLACK OPERATING TEMPERATURE: -20°C UP TO 80°C COMPLIANCE: LEAD FREE AND ROHS A PACKAGING: 10PCS/BAG WIRE DIMENSION: AWG: 20 Terminal B Terminal A B Wire Length 123,82300mm* Terminal A Terminal B RoHS Compliant

Contextual Info: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET

Contextual Info: Si3442CDV Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 a RDS(on) () Max. ID (A) 0.027 at VGS = 10 V 8d 0.030 at VGS = 4.5 V 7.5 0.049 at VGS = 2.5 V 6.1 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: PBT FLAMMABILITY RATING UL94-V0 COLOUR: PURPLE AND GREEN CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 500 MATING CYCLES

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 85°C

Contextual Info: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 85°C

JTF1524S05

Abstract: JTF1024S05 JTF10 JTF1548S3V3
Contextual Info: DC DC 8 15 Watts xppower.com JTF Series • High Power Density • Wide 4:1 Input Range • Operating Temperature 40 º C to +105 º C • Single & Dual Outputs • Standard Remote On/Off • 1600 VDC Isolation • 3 Year Warranty Specification Input Input Voltage Range

Contextual Info: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management

Contextual Info: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)

Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm

Contextual Info: SiB433EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 Qg (Typ.) 7.6 nC PowerPAK SC-75-6L-Single • TrenchFET Power MOSFET

Contextual Info: This is issued in strict confidence on condition that it is not used as a basis for manufacture or sale, and that it is not copied, A ±0,38 .015 B ± 0,13 (.005) C ±0,13 (.005) D ± 0,13 (.005) E ± 0,38 (.015) L ± 0,25 (.010) W ± 0,41 (.016) K ± 0,25 (.010)

Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm

Contextual Info: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)

63916

Abstract: S1209
Contextual Info: New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V