30A09 Search Results

FCH30A09

Contextual Info: SBD T y p e : FCH30 FCH30A 30A09 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.75g Symbol Repetitive Peak Reverse Voltage

Contextual Info: 256Kx8/128Kx16, 20 - 45ns, STACK/PGA 30A097-32 E 2 Megabit High Speed CMOS SRAM DPS128X16Cn3/DPS128X16Bn3 DESCRIPTION: The DPS128X16Cn3/DPS128X16Bn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .

GCH30A09

Contextual Info: SBD T y p e : GCH30 CH30A 30A09 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage

FCH30A09

Contextual Info: SBD T y p e : FCH30 FCH30A 30A09 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.75g Symbol Repetitive Peak Reverse Voltage

Contextual Info: 256Kx8/128Kx16, 20 - 45ns, STACK/PGA 30A097-32 E 2 Megabit High Speed CMOS SRAM DPS128X16Cn3/DPS128X16Bn3 DESCRIPTION: The DPS128X16Cn3/DPS128X16Bn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .

Contextual Info: SBD T y p e : FCH30 FCH30A 30A09 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.75g Symbol Repetitive Peak Reverse Voltage

Contextual Info: SBD T y p e : GCH30 CH30A 30A09 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage

GCH30A09

Contextual Info: SBD T y p e : GCH30 CH30A 30A09 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage

30021

Abstract: L48C L41C IC L44C DATASHEET L30C l31c L43C ORSO42G5 ORSO82G5 ORT42G5
Contextual Info: ORCA ORSO42G5 and ORSO82G5 0.6 - 2.7 Gbps SONET Backplane Interface FPSCs August 2005 Data Sheet Introduction Lattice has extended its family of high-speed serial backplane devices with the ORSO42G5 and ORSO82G5 devices. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSO42G5 and

Contextual Info: 8 Megabit High Speed CM OS SRAM D E N S E - P A C DPS512X 16Cn3/DPS512X 16Bn3 M IC RO SYSTEM S DESCRIPTION: The DPS512X16Cn3/DPS512X16Bn3 High Speed SRAM ''STACK7' modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Lead less Chip Carriers SLCC .

Contextual Info: 1 Megabit High Speed CMOS SRAM DPS128M8CnY/BnY, DPS128X8CA3/BA3 DESCRIPTION: The DPS128M8CnY/BnY, DPS128X8CA3/BA3 High Speed SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .

Contextual Info: 8 Megabit High Speed CMOS SRAM DPS512X16Cn3/DPS512X16Bn3 DESCRIPTION: The DPS512X16Cn3/DPS512X16Bn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .

Contextual Info: 4 Megabit High Speed CMOS SRAM DPS256X16Cn3/DPS256X16Bn3 DESCRIPTION: The DPS256X16Cn3/DPS256X16Bn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .

50-PIN

Abstract: DPS256X
Contextual Info: DENSE-PAC MICROSYSTEMS 4 Megabit CM OS SRAM DPS256X16n3 DESCRIPTION: The DPS256X16n3SRAM "S T A C K " modules are a revolutionarynew memory subsystem using Dense-Pac Microsystems'ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded, " j " leaded

lem HA

Abstract: 50-PIN dps128m8bny
Contextual Info: DENSE-PAC 1 Megabit High Speed CMOS SRAM M I C R O S Y S T E M S DPS128M8CnY/BnY, DPS128X8CA3/BA3 DESCRIPTION: The DPS 128M8CnY/BnY, DPS128X8CA3/BA3 H igh Speed SRAM devices are a revolutionary new m em ory subsystem using Dense-Pac Microsystems' ceram ic Stackable Leadless C hip Carriers SLCC .

50-PIN

Abstract: DPS512X16A3
Contextual Info: DENSE-PAC MICROSYSTEMS 8 Megabits CM OS SRAM DPS512Xl6n3 D ESCRIPTIO N ; The DPS512X16n3 SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded, "J" leaded

AL437

Abstract: L97c L235C L103T L41C L140C L94C l165c L239C L43C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC November 2003 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

Contextual Info: 8 Megabit High Speed CMOS SRAM DPS1MS8EJ4/EL4/RJ4/RL4 Dense-Pac Microsystems, Ina 0 DESCRIPTION: The DPS1M S8EJ4/EL4/RJ4/RL4 surface mount SRAM m odules are a revolutionary memory subsystems using Dense-Pac Microsystems' new 2nd Generation Stacking Technology. The module

Contextual Info: DENSE-PAC MICROSYSTEMS 3 Megabit High Speed CMOS SRAM DPS128X24Bn3 DESCRIPTION: The DPST28X24Bn3 High Speed SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded, "J" leaded or gullwing leaded

DPS512S8

Contextual Info: DENSE-PAC 4 Megabit High Speed CMOS SRAM DPS512S8 EJ4/E L4/RJ4/RL4 M I C R O S Y S T E M S DESCRIPTION: The DPS512S8EJ4/EL4/RJ4/RL4 surface mount SRAM modules are a revolutionary memory subsystems using Dense-Pac Microsystems' new 2nd Generation Stacking Technology. The module combines four

Contextual Info: DENSE-PAC 8 Megabit High Speed CMOS SRAM MICROSYSTEMS DPS512X 16Cn3/DPS512X 16Bn3 DESCRIPTION: The DPS512X16Cn3/DPS512X16Bn3 High Speed SRAM “ STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .

128depth

Contextual Info: D E N S E -P A C 2 Megabit CMOS SRAM M I C R O S Y S T E M S D PS128X16n3 DESCRIPTION: The DPS128X16n3 SRAM "STACK" modules area revolutionary new memory subsystem using Dense-Pac Microsystems'ceramic Stackable Leadless Chip Carriers SLCQ. Available in straight leaded, "J" leaded

Contextual Info: DENSE-PAC MICROSYSTEMS 2 Megabit High Speed C M O S SRAM DPS256S8EJ4/EL4/RJ4/RL4 DESCRIPTION: The DPS256S8EJ4/EL4/RJ4/RL4 surface mount SR A M modules are a revolutionary memory subsystems using Dense-Pac Microsystems' new 2nd Generation Stacking Technology. The module combines two

Contextual Info: 1 Megabit CMOS SRAM DPS128M8n3/DPS128X8A3 DESCRIPTION: The DPS128M8nY & DPS128X8A3 SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded, ‘’J’’ leaded or gullwing leaded packages, or mounted on a 50-pin PGA