30SEP13 Search Results

Contextual Info: F-213 Rev 30SEP13 MEC1–130–02–L–D–EM2 MEC1–120–02–F–D–EM2 (1,00 mm) .0394" MEC1–120–02–L–D–RA1–SL MEC1-RA, MEC1-EM SERIES RIGHT ANGLE/EDGE MOUNT SOCKETS SPECIFICATIONS For complete specifications and recommended PCB layouts see

Contextual Info: SQM100N10-10 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd 100 RDS(on) () at VGS = 10 V 0.0105

Contextual Info: PHP www.vishay.com Vishay Dale Thin Film High Power Thin Film Wraparound Chip Resistor FEATURES • • • • • • High purity ceramic substrate Power rating to 2.5 W Resistance range 10  to 30.1 k Resistor tolerance to ± 0.1 % TCR to ± 25 ppm/°C

Contextual Info: SQM60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd

Contextual Info: SQM110P06-8m9L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0089 RDS(on) () at VGS = - 4.5 V 0.0132 ID (A) - 110 Configuration

Contextual Info: SQJ488EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V 0.0210 RDS(on) () at VGS = 4.5 V 0.0258 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: Si7655ADN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0036 at VGS = - 10 V - 40e 0.0048 at VGS = - 4.5 V - 40e 0.0090 at VGS = - 2.5 V - 40e Qg (Typ.) 72 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm

Contextual Info: SQJ912AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0093 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0111

Contextual Info: VS-HFA25TB60SHM3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Specified at operating conditions • Meets MSL level 1, per LF maximum peak of 260 °C

Contextual Info: SQM120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0038 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: SiHG64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.047 Qg max. (nC) 369 • Reduced Switching and Conduction Losses

Contextual Info: VS-HFA08TB120HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 2 whisker test 2 • Material categorization:

Contextual Info: SQM200N04-1m8 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0018 ID (A) • 100 % Rg and UIS Tested

Contextual Info: SQM47N10-24L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () at VGS = 10 V 0.024 RDS(on) () at VGS = 4.5 V 0.027 ID (A)

Contextual Info: VS-16CTU04HN3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt FEATURES Base common cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current TO-220AB 1 2 • AEC-Q101 qualified, meets JESD 201 class 2

Contextual Info: VS-43CTQ100HN3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode TO-220AB 1 2 • 175 °C TJ operation • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: VS-ETU1506SHM3, VS-ETU1506-1HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt VS-ETU1506SHM3 FEATURES VS-ETU1506-1HM3 • Low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature • Low leakage current

Contextual Info: SUM110P06-07L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) d RDS(on) (Ω) 0.0069 at VGS = -10 V -60 -110 0.0088 at VGS = -4.5 V • TrenchFET power MOSFET • Package with low thermal resistance

Contextual Info: SQM120N04-1m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.0017

Contextual Info: VS-HFA16PB120HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization:

Contextual Info: VS-MURB1620CTHM3, VS-MURB1620CT-1HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 8 A FRED Pt VS-MURB1620CTHM3 FEATURES VS-MURB1620CT-1HM3 • • • • • 2 3 1 D2PAK TO-262 Base common cathode Base common cathode 2 1 2 3 Ultrafast recovery time

Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: Si7655ADN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0036 at VGS = - 10 V - 40e 0.0048 at VGS = - 4.5 V - 40e 0.0090 at VGS = - 2.5 V - 40e Qg (Typ.) 72 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm