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SIHG64N65E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHG64N65E-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 64A TO247AC	Original	PDF	157.11KB

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Vishay Siliconix SIHG64N65E-GE3 MOSFET N-CH 650V 64A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG64N65E-GE3	Tube	481		1	1 $14.40 10 $10.29 100 $7.84 1000 $7.56 10000 $7.56	Buy Now
Bristol Electronics ()	SIHG64N65E-GE3		175		1	1 $7.75 10 $5.81 100 $4.65 1000 $4.46 10000 $4.46	Buy Now
	SIHG64N65E-GE3		25		1	1 $9.00 10 $6.75 100 $6.08 1000 $6.08 10000 $6.08	Buy Now
Quest Components ()	SIHG64N65E-GE3		160			1 $12.00 10 $12.00 100 $7.50 1000 $7.20 10000 $7.20	Buy Now
	SIHG64N65E-GE3		140			1 $13.95 10 $13.95 100 $10.85 1000 $10.85 10000 $10.85	Buy Now
Vishay Intertechnologies SIHG64N65E-GE3 Trans MOSFET N-CH 650V 64A 3-Pin TO-247AC - Bulk (Alt: SIHG64N65E-GE3)
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Avnet Americas	SIHG64N65E-GE3	Bulk		22 Weeks	500	1 - 10 - 100 - 1000 $7.44 10000 $7.18	Buy Now
Mouser Electronics	SIHG64N65E-GE3		320			1 $14.36 10 $10.30 100 $7.85 1000 $7.56 10000 $7.56	Buy Now
TTI	SIHG64N65E-GE3	Tube	375		25	1 - 10 - 100 $7.77 1000 $7.48 10000 $7.48	Buy Now
TME	SIHG64N65E-GE3				1	1 $13.85 10 $11.11 100 $9.34 1000 $9.34 10000 $9.34	Get Quote
EBV Elektronik	SIHG64N65E-GE3			23 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIHG64N65E-GE3 (E SERIES) Mosfet, N-Ch, 650V, 64A, To-247Ac Rohs Compliant: Yes \|Vishay SIHG64N65E-GE3
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Newark	SIHG64N65E-GE3 (E SERIES)	Bulk			1	1 $17.90 10 $13.92 100 $11.62 1000 $11.18 10000 $11.18	Buy Now

SIHG64N65E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHG64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.047 Qg max. (nC) 369 • Reduced Switching and Conduction Losses	Original	SiHG64N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHG64N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHG64N65E AN609, 2725m 2268m 9394m 1714m 06-May-14	PDF
91566 Contextual Info: SiHG64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.047 Qg max. (nC) 369 • Reduced switching and conduction losses	Original	SiHG64N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 91566	PDF
AN844 Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note - AN844 How to Select the Right MOSFET for Power Factor Correction Applications Power factor is the ratio of the real power P = Watts to the apparent power (VA = Volt Ampere); the goal is to achieve a power	Original	AN844 SiHx15N65E SiHx22N65E SiHx24N65E SiHx5N50D SiHx8N50D SiHx3N50D SiHx12N50C AN844	PDF