3070000 Search Results

foxconn

Contextual Info: SPECIFICATIONS Power Connector HM35 Series Vertical, T/H Type 3.00mm [.118"] Pitch Mechanical Contact Retention Force: 1.82Kg min. Durability: 500 Cycles Electrical Voltage Rating: 600V Current Rating: 10A per contact min. Dielectric Withstanding Voltage: 1500V AC

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

nec tokin oe 128

Abstract: MS-17171 MCP51M NEC Tokin od 108 c113 pc 100 3p3 nvidia c51mv PC017 MS17171 Athlon Neo X2 CM1616
Contextual Info: 5 4 3 MS-17171 Ver : 2.0 2 Processor 1 DDR2 Sodimm 0 AMD S1 638 pin uFCPGA 638 socket Battery Charger Page 6 DDR2 400 / 533 / 667 MHz Page 31 DDR2 Sodimm 1 Page 2,3,4,5 Battery select Page 6 Page 32 D D 16 X 16 Bit HyperTransport Link DRAM Power Page 33 North Bridge

Contextual Info: ITRM DESCRIPTION 1 HOUSING 2 CONTACT Q'TY MATERIAL TREATMENT 1 HIGH TEMPERATURE THERMOPLASTIC, UL94V-0 RATED MOLDED BLACK SAME AS NO. OF POSITION. SEE BELOW REMARK 50u" MIN. NICKEL UNDER PLATING, lOOu" MIN. TIN/LEAD PLATING ON TAILS, CONTACT AREA PLATING SEE BELOW.

7be0

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: SPECIFICATIONS Mechanical Contact Retention Force: 1.36kg min. Electrical Voltage Rating: 250V Current Rating: 3A Per Pin Min. Dielectric Withstanding Voltage: 1000V RMS Insulation Resistance: 1000MΩ min. SHROUDED Connector HL13 Series Vertical, T/H Type

Contextual Info: SPECIFICATIONS SHROUDED Connector Mechanical Contact Retention Force: 1.36kg min. Electrical Current Rating: 3A Per Pin Min. Dielectric Withstanding Voltage: 1000V RMS Insulation Resistance: 1000MΩ min. HL35 Series R/A, T/H Type Plug 2.54mmX2.54mm [.100] X [.100] Pitch

Contextual Info: SPECIFICATIONS SHROUDED Connector Mechanical Contact Retention Force: 1.36kg min. Electrical Voltage Rating: 250V Dielectric Withstanding Voltage: 1000V RMS Insulation Resistance: 1000MΩ min. HL27 Series Vertical, T/H Type Receptacle 2.54mmX2.54mm [.100] X [.100] Pitch

HL20

Contextual Info: SPECIFICATIONS Mechanical Contact Retention Force: 1.36kg min. Electrical Current Rating: 3A Per Pin Min. Dielectric Withstanding Voltage: 500V RMS Insulation Resistance: 1000MΩ min. SHROUDED Connector HL20 Series Vertical, T/H Type Plug 2.54mmX2.54mm [.100] X [.100] Pitch

HL07207

Contextual Info: SPECIFICATIONS SHROUDED Connector Mechanical Contact Retention Force: 1.36kg min. Electrical Voltage Rating: 250V Current Rating: 3A Per Pin Min. Dielectric Withstanding Voltage: 1000V RMS Insulation Resistance: 1000MΩ min. HL07 Series Vertical, T/H Type

Contextual Info: SPECIFICATIONS Mechanical Contact Retention Force: 1.36kg min. Electrical Voltage Rating: 125V Current Rating: 2A Per Pin Min. Dielectric Withstanding Voltage: 1000V RMS Insulation Resistance: 1000MΩ min. SHROUDED Connector HL56 Series Vertical, T/H Type

Contextual Info: SPECIFICATIONS Power Connector HM20 Series Vertical, T/H Type 4.20mm [.166"] Pitch Mechanical Contact Retention Force: 0.91Kg min. Durability: 500 Cycles Electrical Voltage Rating: 600V Current Rating: 10A per contact min. Dielectric Withstanding Voltage: 1500V AC

Contextual Info: SPECIFICATIONS Mechanical Contact Retention Force: 1.36kg min. Electrical Voltage Rating: 125V Current Rating: 2A Per Pin Min. Dielectric Withstanding Voltage: 1000V RMS Insulation Resistance: 1000MΩ min. SHROUDED Connector HL55 Series Vertical, T/H Type

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

foxconn

Contextual Info: SPECIFICATIONS BreakaWay Header HB19 Series T/H Type 2.54mm [.100"] Pitch Mechanical Contact Retention Force: 0.91g min. Electrical Current Rating: 3.0A per pin min. Dielectric Withstanding Voltage: 500V AC Insulation Resistance: 1000MΩ min Physical Housing: Nylon 6.6, Glass Filled, UL94V-0

307000

Contextual Info: SPECIFICATIONS SHROUDED Connector Mechanical Contact Retention Force: 1.36kg min. Electrical Current Rating: 3A Per Pin Min. Dielectric Withstanding Voltage: 1000V RMS Insulation Resistance: 1000MΩ min. HL15 Series R/A, T/H Type Plug 2.54mmX2.54mm [.100] X [.100] Pitch

30 pin foxconn connector

Contextual Info: SPECIFICATIONS Mechanical Contact Retention Force: 1.36kg min. Electrical Voltage Rating: 125V Current Rating: 2A Per Pin Min. Dielectric Withstanding Voltage: 1000V RMS Insulation Resistance: 1000MΩ min. SHROUDED Connector HL57 Series Vertical, T/H Type

Contextual Info: SPECIFICATIONS Mechanical Contact Retention Force: 1.36kg min. Electrical Voltage Rating: 250V Current Rating: 1A Per Pin Min. Contact Resistance: 30mΩ Max. Dielectric Withstanding Voltage: 500V RMS Insulation Resistance: 1000MΩ Min. SHROUDED Connector

Contextual Info: SPECIFICATIONS Mechanical Contact Retention Force: 1.36kg min. Electrical Voltage Rating: 125V Current Rating: 2A Per Pin Min. Dielectric Withstanding Voltage: 1000V RMS Insulation Resistance: 1000MΩ min. SHROUDED Connector HL55 Series Vertical, T/H Type

Contextual Info: SPECIFICATIONS Power Connector HM35 Series Vertical, T/H Type 3.00mm [.118"] Pitch Mechanical Contact Retention Force: 1.82Kg min. Durability: 500 Cycles Electrical Voltage Rating: 600V Current Rating: 10A per contact min. Dielectric Withstanding Voltage: 1500V AC

MS-10421

Abstract: MCP51M CI055 MOSFET B20 p03 RN00 PC017 pc014 MAX8774GTL Athlon Neo X2 U019C
Contextual Info: 5 4 3 MS-10421 Ver : 0.C 2 Processor 1 DDR2 Sodimm 0 AMD S1 638 pin uFCPGA 638 socket Battery Charger Page 6 DDR2 400 / 533 / 667 MHz Page 31 DDR2 Sodimm 1 Page 2,3,4,5 Battery select Page 6 D Page 32 D 16 X 16 Bit HyperTransport Link DRAM Power Page 33 North Bridge

header conn

Abstract: per d203
Contextual Info: «SU u t / *J O L9« JO IIV/H ITEM DESCRIPTION 1 HOUSING 2 CONTACT Q’TY H ill MATERIAL SAME AS NO. OF POSITION. SEE BELOV COPPER ALLOY REMARK TREATMENT THERMOPLASTIC, GLASS FILLED UL94V-0 RATED I V/U. MOLDED B U C K 50u* MIN. NICKEL UNDER PLATING, 150u" MIN. TIN/LEAD

Contextual Info: ITEM Q ’TY DESCRIPTION MATERIAL TREATMENT REMARK 50u” MIN. NICKEL UNDER 1 CONTACT SAME AS NO. OF POSITION. PHOSPHOR BRONZE PLATING, 100u” MIN. TIN/LEAD PLATING OVER ALL SEE BELOW THERMOPLASTIC, 2 INSULATOR GLASS FILLED 1 NATURAL COLOR UL94 V-0. REMARK :

header conn

Abstract: 307000 foxconn HL072-1 HL0708
Contextual Info: § PIN 2 PIN 4 2 .5 4 ± 0.13 [ , 1 00 ±.0 0 5 ] £ » « « o in * PIN h * ♦ * * 3 U_E * * * * PIN 3 4.11 [ . 1 62 ] h ,X -!i <5> > | I [.365] V — T r i ^ r r y y y y 7 1 r f T h r t i t ^ D 2 .5 4 ± 0.05 [,100±.002] 0 1.10± 0.05 [ 0 .O4 3 ±.OO2 ]S