303GB Search Results

Contextual Info: E G R & ID G/CANADA/OPTOELEK C / Optics 1 D • 303Gblü □□OOG'ÌS ^50 M C A N A ^ InGaAs Photodiodes C30620 Series DATA SHEET Long Wavelength Photodiode For Detection of 1000 to 1700 NM Radiation Pream plifier Front End With or Without Integral Fiber Optic Pigtails

VTB0912

Abstract: VTB0913 VTBQ914
Contextual Info: S bE 303Gb[n J> 0001DE7 V T B 0 9 1 2, 13, 14 VTB Process Photodiodes E G & G IVCT 515 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 25 ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40°C to 1 10°C Operating Temperature: -40°C to 1 10°C

Contextual Info: SEMiX 303GB12T4s Absolute Maximum Ratings Symbol Conditions IGBT  -  * 1 -  '2) *   ()*/       # '(.  34) "   5. * 6) " 9. " ; (.  -  '). * '. ?   () * 63. "   5. * () " 9. " 4. " - A 3. , B '2)

YAG-444-4

Abstract: YAG-444 SGD-444-4 TO36 package SGD-444-2 SGD-444
Contextual Info: E G & G/CANADA/OPTOELEK SGD/YAG Series: M7E D 303Gbl0 00D03E4 2 ICANA Multi-Element T-HI-53 Features • • • • • • Cross Talk > 1 % Between Elements Oxide Passivated W ide Spectral Range Planar Diffused Structure W ide Spectral Range Linearity Over W ide Dynamic Range

303Gb

Contextual Info: SEMiX 303GB12T4s Absolute Maximum Ratings Symbol Conditions IGBT  -  * 1 -  '2) *   ()*/       # '(.  34) "   5. * 6) " 9. " ; (.  -  '). * '. ?   () * 63. "   5. * () " 9. " 4. " - A 3. , B '2)

Contextual Info: SEMiX 303GB12T4s Absolute Maximum Ratings Symbol Conditions IGBT  -  * 1 -  '2) *   ()*/       # '(.  34) "   5. * 6) " 9. " ; (.  -  '). * '. ?   () * 63. "   5. * () " 9. " 4. " - A 3. , B '2)

Contextual Info: Transmissive Optoswitch VTL13D1 - D7 Slotted Switch — .395 High PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches combines an infrared em itting diode IRED w ith an NPN phototransistor in a one piece, sealed, IR transm itting plastic case.

dr 25 germanium diode

Abstract: thermistor inas J12-18C
Contextual Info: EGa Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 jim wavelength range. The equivalent circuit is a photon­ generated current source I h with parallel

Contextual Info: E G & 6/ CANADA/O PTOE LEK n n lOE D • 3Q30bl0 D0DQQ31 R ■ CANA i l Solid state 7"" V/"i>7 Solid State Emitters Elec,ro ° P “CS Developmental Type C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode ■ Typical Threshold Current - 100 mA

Contextual Info: E G & G/CANADA/OPTOELEK ID D 3030bl0 OOOG1SS I t c / l Optics «CANA t - w Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

453gb12e4s

Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1

HgCdTe

Abstract: PbSe Judson J12TE3-66S-R250U J12TE3-66S-R01M detector active area size nep fast light detector Photodiodes Germanium LF356 OP27 OPA111
Contextual Info: n Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Tem perature Effects J12 Series detectors are high-quality Indium A rsenide photodiodes for use in the 1 to 3.8 jim w avelength range. The equivalent circuit is a photon­ generated current source I h w ith parallel

ELLS 110

Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
Contextual Info: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

tic 1060

Abstract: rca 923 C30895 5252 F led rca 514 5252 F 5252 S RCA 411
Contextual Info: E G & G/CANADA/OPTOELEK BDBDbl D O O O O i n ID <123 H C A N A T-W-Si Photodiode R G i l Optics C30895 D A TA S H E ET Silicon Avalanche Photodiode Optim ized fo r High Responsivity and V e ry Lo w Noise at 1060 Nanom eters • Noise Equivalent Power NEP a t 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.

Contextual Info: VTP8551 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm m i t- 18 2 (4 .6 2 ) , 17 2 ( 4 . 3 7 ) r (0 .5 8 ) .0 3 9 ( 1 .0 0 ) ' .0 3 2 ( 0 .8 1 ) ( 2 .4 9 ) NOM. . ( 3 .3 0 ) •042 ( 1 .0 7 ) OPTICAL £ I r ' + ! 1 .1 6 2 ( 4 .1 1 ) Ic a t h o d e K

RCA 467

Abstract: rca 807 RCA SOLID STATE C30116 infrared emitting diode led 1060-nm mW
Contextual Info: E G & G/CANADA/OPTOELEK ID D • J3030bl0 G000D13 SSM ■ CANA V S f l l ÆM Electro Optics ■ and Devices Solid State Emitters Developmental Type C30116, C30116/F 1060 nm Indium Gallium Arsenide Infrared Surface Emitters for Pulsed or Continuous D C Operation

C30985E Photodiode Array linear

Abstract: C30985E 32 Elements linear Avalanche Photodiode Array rca 711 C30985 Photodiode Array 32 element 30-element L1117 l1117 g linear array photodiode element
Contextual Info: E G & G/CANADA/OPTOELEK I t C i l IO D • B030bl0 OOODIST SGT * C A N A Photodiode C30985E DATA SHEET Optics 25-Element Silicon Avalanche Photodiode Linear Array for Detection of 900 to 1060 nm Radiation High Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm

gaseous lasers

Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Contextual Info: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using

optical input to rca 5.1 output circuit

Abstract: rca ca3130 CA3130 peak detector GB41P2 fenwal ca3130 equivalent CLASS II LASER laser rca melcor PULSED LASER DIODE DRIVER
Contextual Info: E G & G/CANADA/OPTOELEK I f n • IDE D ■ 3030L.10 □□□0031 R Hi CANA i l fp11^state 7"" Solid State Emitters Electro Optics ■ * ■- r Developmental Type r C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode

GD363

Contextual Info: TOSHIBA TMP47C620/820 CMOS 4-BIT MICROCONTROLLER TMP47C620DF, TMP47C820DF The 47C620/820 are high speed and high perform ance 4-bit single chip m icrocomputers based on the TLCS470 series w ith a LCD driver and high speed tim er / counters. PART No. ROM RAM

skm 195 gb 125 dn

Abstract: IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107
Contextual Info: 1997-2012:QuarkCatalogTempNew 9/11/12 8:57 AM Page 1997 25 SEMITRANS and SEMiX High Performance IGBT Modules RoHS SEMiX 603 INTERCONNECT SEMITRANS 3 TEST & MEASUREMENT SEMITRANS™ and SEMiX® 600 V, 1200 V, 1700 V High Performance IGBT Modules SKM 400GAL125D

Contextual Info: VTL5C3, 5C4 Low Cost LED Axial Vactrols PACKAGE DIMENSIONS inch mm .5 ( 12^7 ) 32 0 (8 .1 5 ) ( 5 .0 8 ) .3 7 0 (9 .< 0 ) UL Listed File #73887 .3 9 0 Í9 .9 1 ) PLASTIC POTTING CONTOUR NOT CONTROLLED DESCRIPTION VTL5C4 features a very low "on" resistance, fast

VTL5C4

Abstract: VTL5C3 VTL5C1 vtl5 vactrol
Contextual Info: VTL5C3, 5C4 Low Cost LED Axial Vactrols PACKAG E DIMENSIONS inch mm .5 0 ( 12. 7 ) .3 9 (9 .9 ) K MINIMUM * 320 (8 .1 5 ) .0 6 0- LJAV — —-(1 .5 2 ) (2 T - PLCS) n .0 1 0 ( 0 . 2 5 ) .0 2 5 ( 0 . 6 4 ) w ( 5 .08 ) .3 7 0 .3 9 0 (0 .5 1 ) UL Listed File #73887

J18TE2-66G

Abstract: J18TE4-3GN-R01M-2 J18TE2
Contextual Info: A eG sG JU P S O N Extended InGaAs Photodiodes 0.8 to 2.6 ¡am 1.9|_un Th erm oelectrically Cooled Extended InG aAs D etectors Model Number Cutoff Part Active Operating Wave­ Responsivity , Number Size Temper­ length Dia. ature . (50%) @ ^peak Ko (mm)