300X3 Search Results

Contextual Info: Profile 8248 300x39,7 mm Weight (Kg/mt) Width (mm) Height (mm) RTH (C/W)* *Lenght (mm) 12,69 300 39,7 0,39 200 PADA ENGINEERING S.r.l. Via G. B. Pirelli, 11 - Saltara (PU) 61030 - Italy Tel. +39 0721 899555 - Fax. +39 0721 897064 - www.padaengineering.com

ua 180

Abstract: x -12sl
Contextual Info: Center part 180 WxH x l 2-foidSKWP X 30X 215 ^240x30x215 300x30x215 '*« S K iiP J.\ö k*0

NE644

Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
Contextual Info: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors

parabolic antenna

Abstract: antenna for 12GHZ parabolic microwave antenna Types of Radar Antenna long wave RADIO absorber
Contextual Info: EMC Components IP-B, IB, IS, IR, IF-P, IF-R Material Radio Wave Absorbers Radio Wave Absorbing Materials A key factor in absorbing unwanted electromagnetic energy efficiently and completely is selecting the most appropriate materials for the application. This selection process must take into account

Contextual Info: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.

1-645235-6

Abstract: 100CL 4-530396-4 4X11 edge connector 32 package 11x7 453039 1-530843-2 1-645235-7
Contextual Info: 107-68619 Packaging Specification GPL 267 SERIES Sep.13,05 1. PURPOSE 目的 Define the packaging specifiction and packaging method of GPL 267 Series. 订定 GPL 267 Series 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 TYPE TYPE A

KTB688B

Abstract: KTD718
Contextual Info: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25

KTD998

Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Contextual Info: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃

SYM53C896

Abstract: 80960JT 273293 intel desktop board SERVICE MANUAL SMU22R
Contextual Info: Intel Integrated RAID Controller Design Kit SMU22R Technical Product Specification January 2000 Order Number: 273293-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

LED21-TEC-PR

Contextual Info: LED21-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics.

LED34-TEC-PR

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3.4 µm Model LED34-TEC-PR 24 µW •Light Emitting Diodes LED34-TEC-PR are designed for emitting at a spectral range around 3400 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates

LED22

Contextual Info: LED22 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22 has a stable ouput power and a lifetime more then 80000 hours.

LED22-TEC

Contextual Info: LED22-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22-TEC has a stable ouput power and a lifetime more then 80000 hours.

LED20-TEC-PR

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm Model LED20-TEC-PR 1.1 mW •Light Emitting Diodes LED20-TEC-PR are designed for emitting at a spectral range around 2050 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates

LED36-TEC

Contextual Info: LED36-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.

LED31-TEC

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3 .1 µ m Model LED31-TEC 14 µW •Light Emitting Diodes LED31-TEC are designed for emitting at a spectral range around 3100 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates

Contextual Info: LED23-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

LED43-TEC-PR

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 4.3 µm Model LED43-TEC-PR 10 µW •Light Emitting Diodes LED43-TEC-PR are designed for emitting at a spectral range around 4300 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates

LED34

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3.4 µm 24 µW Model LED34 •Light Emitting Diodes LED34 are designed for emitting at a spectral range around 3400 nm. Heterostructures HS are grown on InAs substrates. The output emission can be modulated by current flowing in

omron E3F

Abstract: Y92E-M12PUR4A5M-L E3FZ-T86H-D e3f omron Y92E-M12PUR4S5M-L E3FZ-D87 Y92E-M12PUR4A2M-L Y92E-M12 E3FZ-T81H E3FZ-LS89H
Contextual Info: E55E-EN-01+E3FZ-E3FR+Datasheet.FM Seite 1 Dienstag, 15. April 2008 5:17 17 Easy mounting photoelectric sensor in short M18 housing E3FZ/E3FR • Secure-click snap mounting for fast installation • High power LED for enhanced sensing distance • Short housing with less than

E3X-DA11-N

Abstract: E3X-DA41V E3XDA21N E3X-DA41-N E3X-DA21-N E3X-DA11V torque settings chart 12mm brass E32-L56E e3x-da41
Contextual Info: E3X-DA-N Sense the Difference, Make a Difference! Digital Fiber Amplifier Amplifier ● Select from Three Clear Display Methods: Digital incident level Digital percent level LED Bar Display ● Save-wiring Connector ● Auto Power Control Mobile Console ● Remote Tuning and Adjustment

12VDC sf 249

Abstract: 230 97o Osram LED SMD 5630 diodo 2B
Contextual Info: 2013 Catalogo VLM 2013 VLM Catalogue 2013 since 1945 570 www.vlm.it since 1945 Indice Index Indicazioni Generali General warnings 575 Simboli e definizioni Symbols and definitions 577 Tipi, classi, gradi di protezione Types, classes, degrees of protection

Contextual Info: SPECIFICATION PATENT PENDING Part No. : TG.30.8113 Product Name : Apex Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain

Contextual Info: SPECIFICATION PATENT PENDING Part No. : TG.30.8113W Product Name : Apex White Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain