300V 0.5A NPN TRANSISTOR Search Results

2SC2023

Contextual Info: 2SC2023 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 300 V IEBO VEBO 6 V V BR CEO IC 2 A hFE 2SC2023 Unit VCB=300V 1.0max mA VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W

2SC5271

Abstract: 300V regulator FM20
Contextual Info: 2SC5271 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 7 V V BR CEO 5(Pulse10) A hFE1 IC VCB=300V 100max µA VEB=7V 100max µA IC=10mA 200min V VCE=2V, IC=2.5A 10 to 30 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A

JANS2N2484

Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
Contextual Info: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930

18w sot23 transistor

Abstract: 300V 0.5A NPN transistor
Contextual Info: FMMT42CSM GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) FEATURES 0.76 ± 0.15 (0.03 ± 0.006)

LB-008

Abstract: lc08a LB 125 transistor Triple Diffused
Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

NPN Transistor 10A 400V

Abstract: 2N5663 300V transistor npn 2a LE17
Contextual Info: SILICON POWER NPN TRANSISTOR 2N5663 • Fast Switching Transistor • Hermetic TO-5 Metal Package • Applications include High Speed Switching Circuits and Power Amplifiers • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

etd 41

Abstract: 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 BUF41 NPN Transistor 10A 400V OA41
Contextual Info: 7 q g q g 3 7 £ fl D o g a s i SGS-THOMSON i Li lf^(S llD(gi S A 3 BUF410/410I BUF410A/410AI S-THOMSON 3GE » FASTSWITCH EASY-TO-DRIVE (ETD) NPN TRANSISTORS PRELIMINARY DATA • HIGH SWITCHING SPEED NPN POWER TRANSISTOR ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­

2SC1050

Contextual Info: Product Specification www.jmnic.com 2SC1050 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in audio and general purpose applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

2sc1050

Abstract: npn transistors 300V 0,5a
Contextual Info: SavantIC Semiconductor Product Specification 2SC1050 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in audio and general purpose applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5253 • Hermetic TO-39 Metal package. • Ideally Suited For General Purpose AmplifierApplications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

2sc105

Abstract: 2SC1050
Contextual Info: Inchange Semiconductor Product Specification 2SC1050 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in audio and general purpose applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

Contextual Info: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

Contextual Info: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

Contextual Info: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

LE17

Abstract: NPN Transistor 10A 400V 300V transistor npn .5a
Contextual Info: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

NPN Transistor 1.0A 400V

Abstract: LE17 SMD-0.5 NPN Transistor 10A 400V
Contextual Info: NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

voltage regulators 300v dc

Abstract: LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w
Contextual Info: 2N3439 2N3440 HIGH VOLTAGE NPN TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE 0.89

2N4863

Abstract: SDT5501 SDT5556 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT 300V 0.5A NPN transistor
Contextual Info: -Æittron PKOOdJXgTr ÄTÄ1L©( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices, Inc. NPN EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 91 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)

transistor VCE 1000V

Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
Contextual Info: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features: