300FISEC Search Results

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

Contextual Info: OM6009SM OM6011SM OM6010SM QM6012SM POWER MOSFETS IN HERMETIC ISOLATED SURFACE MOUNT PACKAGE 100 V Thru 500V, Up To 22 Amp, N-Channel MOSFET In Hermetic Surface Mount Package FEATURES • • • • • Isolated Hermetic Surface Mount Package Fast Switching

OTC4330

Abstract: 2N6563 2N6561 OTC4530 OTC453Q SVT7600 SVT7601 SVT7602
Contextual Info: MAE D OPTEK TECHNOLOGY INC bTTfiSaO ODDlHfl? 4TS • OTK ■ ProductBulMlnQTC4530 duct Built August 1990 U K Ifc K Fast Switching NPN Power Transistor Type OTC453Q T-ss-n 300V, 30 A ■ a Applications • High Frequency Switching Regulators • Class "D" Amplifiers and Converters

Contextual Info: OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST QM6102ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • • • Isolated Hermetic Metal Package

RCS10V

Contextual Info: O M 6234S D /S M O M 6236S D /S M O M 6238S D /S M O M 6240S D /S M O M 6235S D /S M O M 6237S D /S M O M 6239S D /S M OM 6241 SD /SM DUAL POWER MOSFETS IN HERMETIC ISOLATED DUAL IN-LINE PACKAGES 100V Thru 500V, Dual High Current. N -C ha nn el M O S F E T s

Contextual Info: Detector Specifications L14C1, L14C2 Light Detector Planar Silicon Phototransistor T h e L14C1 a n d L14C2 are NPN Silicon P h o to tran sisto rs in a T O -18 style herm etically sealed package. T h e device has a top-looking flat lens w hich is th u s ideally suited to optoelectronic sen sin g applications

Contextual Info: FASCO INDS/ SENISYS 40E D B 34^736 0Q012b8 T B S E N I CLT4Q0_ V "4 H o i Silicon Planar Phototransistor i - i * ; Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • • Storage Temperature. -4CPCtQ+10O“O

35B DIODE

Abstract: mosfet motor dc 48v OM6218SP1
Contextual Info: OM6218SP1 DUAL 60V, LOW R DS on POWER MOSFET IN LOW PROFILE PLASTIC PACKAGE Dual Uncommitted Power MOSFET N-Channel, 60V, .01812 R ds(oii) Iff FEATURES « • • • • Two Uncommitted M O S F E T s In One Package Isolated Low Profile Package Low RDS(on)

SD51

Contextual Info: “fl2 COORS COMPONENTS INC DÊT|aM3DOOb □ □ □ □ 1 3 4 Schottky Rectifier Series SD 51 60 A Avg; VRRM up to 45 Volts 82D 0 0 13 4 O û 3 • Guard ring reverse protection ■ 45 Volts W V ' rwm ■ 60 Amperes * 160" Tj Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes

Contextual Info: OM6038SM OM6040SM OM6Q39SM OM6Q41SM POWER MOSFET IN HERMETIC ISOLATED SURFACE MOUNT PACKAGE 100V Thru 500V, Up To 10 Amp, N-Channel Power MOSFETs In A Hermetic Surface Mount Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching, Low Drive Current

Contextual Info: ^ SEMELÂB LTD 37E D • 8133187 OGGOSIS 3 ■ SMLB 8EMELAB s 2N 6767 2N 6768 MOS POWER MECHANICAL DATA N-Channel Enhancement M ode Dimensions in mm APPLICATIONS • SWITCHING REGULATORS • CONVERTERS • MOTOR DRIVERS PIN 1 -G a te TO 3 Thin PIN 2 -S o u rc e

K3020T

Abstract: 3040T K3030
Contextual Info: MICRO QUALITY / S E M IC O N D U C T O R , IN C . 30 Amp Center Tapped Schottky Rectifiers 150°C m ax Tj 20 Volt, 30 Volt and 40 Volt VRRM .640 Volt V F at lF = 15.0 Amps Very Fast Switching Speed Standard TO-3 Case LTR. A B C D E F G H IN C H E S M IL L IM E T E R S

0M6101

Contextual Info: OM6405SD QM6406SD OM6407SD OM64Q8SD FOUR UNCOMMITTED MOSFETS IN ONE HERMETIC ISOLATED PACKAGE Four U n c o m m i t t e d 100 V To 500 V, 4 To 8 Am p, N- Ch anne l Power MOS FE Ts In One Package FEATURES • • • • • • Isolated Hermetic Metal Package

Senisys

Abstract: CLT400 CLED400 T00C
Contextual Info: FASCO INDS/ SE NI SY S 40E D 3 4 cH 7 3 ô 00012fc>0 T ISISENI iCEEaasae CLT400 Silicon Planar Phototransistor Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. Storage Temperature.- W C tq +100“0