3000Q Search Results
3000Q Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 3000-Q | Brady Worldwide | BRADY 2"" SELF ADHESIVE LETTER Q | Original | 146.67KB | |||
| 3000QG | Davies Molding | Hardware, Fasteners, Accessories - Knobs - KNOB FLUTED M10 X 1.5 PHENOLIC | Original | 68.58KB |
3000Q Price and Stock
Advanced Energy Industries Inc LCM3000Q-TThe LCM3000Q-T is a 3000W AC-DC bulk front-end power supply that provides a nominal 24V output. |
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LCM3000Q-T | 22 |
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LCM3000Q-T | Bag | 16 Weeks | 10 |
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LCM3000Q-T | 26 Weeks | 10 |
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LCM3000Q-T | 22 |
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Telemechanique Sensors VM18VA3000QUltrasonic Sensor |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VM18VA3000Q | 3 |
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Advanced Energy Industries Inc LCM3000Q-T-1Advanced Energy LCM3000Q-T-1 |
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LCM3000Q-T-1 |
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LCM3000Q-T-1 | 1 | 1 |
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VPG Foil Resistors Y174513K3000Q3RV/N 303139 13K300 0.02% B T 155753 - Tape and Reel (Alt: Y174513K3000Q3R) |
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Y174513K3000Q3R | Tape & Reel | 32 Weeks | 10 |
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VPG Foil Resistors Y17458K33000Q2RUltra High-Precision Resistor Metal Foil 8.33kOhm 0.02% T/R - Tape and Reel (Alt: Y17458K33000Q2R) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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Y17458K33000Q2R | Tape & Reel | 32 Weeks | 10 |
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3000Q Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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thermistor ntc 30kContextual Info: £ CONNECTOR - THIS DRAWING AND THE INFORMATION IS THE PROPERTY OF DUALITY THERMISTOR AND ALL UNAUTHORIZED USE AND REPRODUCTION IS PROHIBITED 1 5-11-00 NO. DATE REVISION JH APPROVAL SPECIFICATIONS RESISTANCE VALUE AND TOLERANCE« R@25C=3000Q OHMS +/- VA OTHER ELECTRICAL CHARACTERISTICS* |
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rg25cqt01002-114qt01012-00520b-376-4754+2 | |
IC 7487
Abstract: T0850 330d ntc 47k 4700
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r25/r50ctq8302t4103000qt08302c+10 | |
3015 hj
Abstract: ntc 180-15
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ct08400t275ct08302t4103000qr25/r50+7 | |
MMW474Contextual Info: * 9 5METALLIZED 4 X S/KU x z fll> 7 < II L a 'J T J 1* POLYESTER FILM CAPACITORS MMW-EF M M W - E F ^SERIES 'J - x • 4# ^/F E A T U R E S • gsmitttcD&&if$it±cD i'=i y ^ y y - v t o • U L 9 4 V -0 tC D T \ L t l ' i g £ 1 & lz @ tL T l'£ to • This capacitors provide self-healing. |
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dc100vmmw474 | |
diode 5082-3080
Abstract: 1N5767 5082-3080 1N5957
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1n57671n5957diode 5082-30805082-3080 | |
E232* fet
Abstract: E232H rx 2b rx8d TR3B GED42 RX1A tr6b
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xrt4000eia-530rs232rs449+9 | |
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Contextual Info: SGS-THOMSON M C 1489 ilL i S T O 3 ! 0Ê i M C 1489A QUAD LINE RECEIVERS INPUT RESISTANCE -3k to 7kQ INPUT SIGNAL RANGE - ± 30V INPUT THRESHOLD HYSTERESIS BUILT-IN RESPONSE CONTROL: a) LOGIC THRESHOLD SHIFTING b) INPUT NOISE FILTERING N DIP14 ( Plasticanti Ceramic) |
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dip14mc1489rs-232cmc1489l+5 | |
8178 nContextual Info: DATA SH EE T_ NEC MOS INTEGRATED CIRCUIT juPD 16680 1/53, 1/40 DUTY, LCD CONTROLLER/DRIVER WITH BUILT-IN RAM DESCRIPTION The jiiPDI 6680 is a driver which contains a RAM capable of full - dot LCD display. The single ,uPD16680 IC chip can |
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p16680upd16680s12694ej2v0ds008178 n | |
conductive floor test methods NFPA 56A
Abstract: ASTM-D-257 electronic drum kit ISO 8015 tolerance floor test methods NFPA 56A NFPA-56A lcd quart TV multi surface cleaner MIL-B-81705 NFPA 56A
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conductive floor test methods nfpa 56aastm-d-257electronic drum kitiso 8015 tolerance+6 | |
MB501 prescaler
Abstract: divide by 100 prescaler 1GHZ DIVIDE BY 64 PRESCALER SP8704 SA701D 64/65 dual modulus prescaler divide 5 prescaler 128 dual modulus prescaler eel -16-2005 divide by 5 prescaler
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sa701uma10057110a2ti0dfl373t+11 | |
shaft current
Abstract: RXKH
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shaft currentrxkh | |
DIVIDE - BY - 4 PRESCALERContextual Info: Philips Semiconductors RF Communications Products Product specification Divide by: 64/65/72 triple modulus low power ECL prescaler DESCRIPTION FEATURES The SA702 triple modulus {Divide By 64/65/72 low power ECL prescaler is used in synthesizer systems to achieve low phase |
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sa702uma10053000qdivide - by - 4 prescaler | |
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Contextual Info: * 9 54 X M UXX t 117< Ibkl'JTyV MMW-HP METALLIZED POLYESTER FILM CAPACITORS MMW-HP g F E A TU R E S • MMW-EF v U - X<F>nm U 7 -y 7°a°n?'To • S W 1 ;g N -1 '> /'C -7 4 'i:'C 0 S J l • • High current application. • For applications where high frequency, high current are required. |
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9000m | |
capacitor 400V 401 k
Abstract: MMW474
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dc200vcapacitor 400v 401 kmmw474 | |
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NFPA 56A
Abstract: NFPA-56A isopropanol Alcohol DOD-HDBK-263 MIL-B-81705 B8170
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97190pripnfpa 56anfpa-56aisopropanol alcohol+3 | |
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Contextual Info: SWR SWX M ETALLIZED POLYESTER FILM CAPACITORS SERIES swxi,lj-x SERIES ♦1 # ^/FEATURES • i S ' J 'l i <0 a V • =r y V V t o e . s. « i®U ^;L-a;jt[e]E&lzftii-e-ro • -s re *$ = i > ^ y+ - D a w ^ ^ vtc • Very amall size, low voltage and large capacitance. |
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3000qf | |
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Contextual Info: UM4300 SERIES UM7300 SERIES PIN DIODE For Attenuator Applications Features • Extremely low distortion performance • Useful frequency range extends below 500 KHz • Power dissipation to 20W UM4300 • Capacitance as low as 0.7 pF (UM7300) • Voltage ratings to 1000V |
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um4300um7300 | |
FLR016FHContextual Info: FLR016FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G-j^B = 8.5dB(Typ.) • High PAE: r iadd = 26%(Typ.) • Proven Reliability DESCRIPTION The FLR016FH chip is a power GaAs FET that is designed for |
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flr016fh | |
FLK012
Abstract: k d 998 0
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flk012wf3000qout99flk012+1 | |
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Contextual Info: FLR016FH K - B a n d Power GaAs FE i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Condition Item Rating Unit Drain-Source Voltage vds 12 V Gate-Source Voltage vgs -4 V 1.0 w °c °c 1013! rO W B i UtSSipflwlOit Tc = 25°C Pt Storage Temperature |
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flr016fh3000q | |
tx2b rx2b speed control diagram
Abstract: RX1B rx2a tx2a TX2b TX4-RX4 rs232 schematic diagram rx2b tx2b rx4d tx4d RX2 RELAYS rx2d
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xrt4000eia-530rs232rs449+11 | |
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Contextual Info: MICROSEMI CORP/ WATERTOWN 50E D • ^3471^3 00123^3 777 ■ U N I T PIN DIODE UM4300SERIES UM7300 SERIES For Attenuator Applications 7 -o ~ 7 — / 5 Features • Extrem ely low d is to rtio n perform ance • Useful frequency range extends below 500 KHz • Power d is s ip a tio n to 20W UM4300 |
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um4300seriesum7300um430040nc-2 | |
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Contextual Info: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 mA to 100 mA bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are |
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1n57671n5957 | |
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Contextual Info: m ìm n FLK012WF T U JIO U X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general |
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flk012wf | |