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EW ELECTRONICS SGC3S300NM CAP TRIMMER 8-30PF 100V SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SGC3S300NM	Digi-Reel	8,451		1	1 $0.94 10 $0.80 100 $0.68 1000 $0.61 10000 $0.61	Buy Now
	SGC3S300NM	Cut Tape	8,451		1	1 $0.94 10 $0.80 100 $0.68 1000 $0.61 10000 $0.61	Buy Now
	SGC3S300NM	Reel	8,000		1,000	1 - 10 - 100 - 1000 $0.70 10000 $0.59	Buy Now
Amphenol Times Microwave Systems EZ-300-NMH-X N-MALE (PLUG) CRIMP CONNECTOR (N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EZ-300-NMH-X	Bag	16		1	1 $24.78 10 $21.06 100 $17.90 1000 $15.98 10000 $15.98	Buy Now
Interstate Connecting Components	EZ-300-NMH-X					1 $26.91 10 $22.19 100 $20.74 1000 $20.74 10000 $20.74	Buy Now
Amphenol Times Microwave Systems EZ-300-NMH-RA-X TYPE N MALE (PLUG) RIGHT ANGLE N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EZ-300-NMH-RA-X	Bag	13		1	1 $56.44 10 $47.97 100 $40.78 1000 $38.94 10000 $38.94	Buy Now
Interstate Connecting Components	EZ-300-NMH-RA-X					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Amphenol Times Microwave Systems TC-300-NMH-X N-MALE (PLUG) CRIMP CONNECTOR (S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC-300-NMH-X	Bag	11		1	1 $26.01 10 $22.11 100 $18.79 1000 $16.78 10000 $16.78	Buy Now
Interstate Connecting Components	TC-300-NMH-X					1 $28.40 10 $23.42 100 $21.89 1000 $21.89 10000 $21.89	Buy Now
Dantona Industries Inc SCR-3300NM BATTERY NIMH 1.2V 3.3AH SC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCR-3300NM	Bulk			1	1 $4.95 10 $4.95 100 $4.95 1000 $4.95 10000 $4.95	Buy Now
Newark	SCR-3300NM	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SCR-3300NM	Bulk		3 Weeks	1	1 $2.99 10 $2.99 100 $2.99 1000 $2.99 10000 $2.99	Get Quote

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300 NM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
P1189 Abstract: Q62702-P3586 GEOY6652 Q62702-P1189 Q62702-P1193 Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm SFH 300 und bei 880 nm (SFH 300 FA) • Hohe Linearität	Original		PDF
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA SFH 300 SFH 300 FA Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm SFH 300 und bei 880 nm (SFH 300 FA)	Original		PDF
Q62702P3586 Abstract: GEOY6652 OHLY0598 Q62702-P1193 Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm (SFH 300) und bei 880 nm (SFH 300 FA)	Original		PDF
GEOY6652 Abstract: OHLY0598 Q62702-P1193 Q62702P3586 Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm (SFH 300) und bei 880 nm (SFH 300 FA)	Original		PDF
J801 Abstract: U300C EHF-120-01-L-D U300B u300a u212 R529 xc3s500e-4pqg208c R622 R508 Contextual Info: 1 2 3 4 5 6 8 7 D V460A-300 LevelShifter V460A-300 LevelShifter.Sch D V460A-300 FPGA V460A-300 FPGA.Sch V460A-300 FPGA Config Power V460A-300 FPGA Config Power.Sch V460A-300 APIX0 V460A-300 APIX0.Sch C C V460A-300 APIX1 V460A-300 APIX1.Sch V460A-300 Conn Top	Original	V460A-300 J801 U300C EHF-120-01-L-D U300B u300a u212 R529 xc3s500e-4pqg208c R622 R508	PDF
Q62702-P3586 Abstract: Q62702-P85-S3 Q62702-P85-S4 GEO06652 Q62702-P1057 Q62702-P1058 Q62702-P1189 Q62702-P1193 42CHIP Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm SFH 300 und bei 880 nm (SFH 300 FA) • Hohe Linearität • 5 mm-Plastikbauform im LED-Gehäuse	Original	ICEO/ICEO25° GEO06652 Q62702-P3586 Q62702-P85-S3 Q62702-P85-S4 GEO06652 Q62702-P1057 Q62702-P1058 Q62702-P1189 Q62702-P1193 42CHIP	PDF
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm SFH 300 und bei 880 nm (SFH 300 FA) • Hohe Linearität • 5 mm-Plastikbauform im LED-Gehäuse	Original	GEOY6652	PDF
163297 Abstract: 167674 159656 Contextual Info: LP 2N/5.08 Double-level 90° orientation Low profile/offset left LP 5.08/135 Single-level 135° orientation with test points Rated Voltage Rated Current Wire Size Strip Length Torque Nm flb. in. Pin Length 300 V 300 V 250 V 300 V 300 V 300 V 10 A 25 A 10 A	OCR Scan	O95236 163297 167674 159656	PDF
A29MA Contextual Info: SKT 300 VRSM VRRM, VDRM ITRMS = 550 A maximum value for continuous operation V V ITAV = 300 A (sin. 180; Tc = 93 °C) 500 400 SKT 300/04D 900 800 SKT 300/08D1) 1300 1200 SKT 300/12E1) 1500 1400 SKT 300/14E1) 1700 1600 SKT 300/16E1) Symbol Conditions ITAV	Original	300/04D 300/08D1) 300/12E1) 300/14E1) 300/16E1) A29MA; O-209AD O-118) A29MA	PDF
LMGG27W Abstract: LMRR27W LMRR58D LUGG58D LUGR58M LUGY58M LURR27W LURR58D LUYR58M LUYY27W Contextual Info: Bi-Color and Bi-Polar LEDs Shape Part Number 5mm Round Emitting Color Emitting Material Lens-Color Wave Length nm Luminous Intensity IF=20mA(mcd) Min. Max. 625 80 - 300 625 80 - 300 Red GaAsP/GaP Red GaAsP/GaP Red GaAlAs 660 300 - 1300 Red GaAlAs 660 300 - 1300	Original	LURR27W LMRR27W LMGG27W LUYY27W LUGR58M LUYR58M LUGY58M LURR58D LMRR58D LUGG58D LMGG27W LMRR27W LMRR58D LUGG58D LUGR58M LUGY58M LURR27W LURR58D LUYR58M LUYY27W	PDF
Contextual Info: 3mm LED CBI Circuit Board Indicator Bi-level 553-xxxx-300 PART NO. 8.76 [.345] 5.08 [.200] HIGH EFFICIENCY - LED TYPE 01 553-0111-300 553-0122-300 553-0133-300 553-0177-300 553-0188-300 2.9 [.115] 5.08 [.200] 9.65 [.380] 2.54 [.100] CATHODE Red/Yel Cathode for	Original	553-xxxx-300 CBI-59	PDF
k 4110 Abstract: CIE1931 Contextual Info: Yokohama Electron Application Note Red Magic White - RMW Shadow Pled component Red Magic White YBBT34RMW-7400*K bluex2chip:If/chip 350 300 250 200 150 100 350 300 250 200 150 100 350 300 250 200 150 100 350 300 250 200 150 100 350 300 250 200 150 100 350 300	Original	YBBT34RMW-7400 YBBT34RMW-3300 CIE1931 k 4110	PDF
EN-60825-1 Contextual Info: 3mm LED CBI Circuit Board Indicator Bi-level 553-xxxx-300 PART NO. 8.76 [.345] 5.08 [.200] HIGH EFFICIENCY - LED TYPE 01 553-0111-300 553-0122-300 553-0133-300 553-0177-300 553-0188-300 2.9 [.115] 5.08 [.200] 9.65 [.380] 2.54 [.100] CATHODE Red/Yel Cathode for	Original	553-xxxx-300 MIL-STD-202E, EN-60825-1	PDF
X100M Abstract: laser diode bare chip Contextual Info: SLD-980-P50-C-300-03 UNION OPTRONICS CORP. 980nm Laser Diode chips 980nm Laser Diode Chips SLD-980-P50-C-300-02 size :300*300 m Specifications Device Laser Diode Bare Chip Structure Double Channel , Single Ridge Waveguide 300µ m •External dimensions Unit : μm	Original	SLD-980-P50-C-300-03 980nm SLD-980-P50-C-300-02 x300m x100m laser diode bare chip	PDF

Contextual Info: MEA 300-06 DA MEK 300-06 DA MEE 300-06 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 600 V IFAVM = 304 A = 250 ns trr Preliminary data VRSM V 600 VRRM Type V 600 2 MEA 300-06DA 1 2 MEK 300-06DA 3 1 2 1 MEE 300-06DA 3 1 2 3 3 Symbol Test Conditions	Original	300-06DA	PDF
SLD-980-P50-C-300-05 Abstract: ridge waveguide semiconductor laser laser diode 980nm Contextual Info: SLD-980-P50-C-300-05 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips SLD-980-P50-C-300-05 •Specifications 1 Size : (2) Device: (3) Structure 300300100 m Laser diode bare chip Double channel , single ridge waveguide 300µm ■External dimensions(Unit : μm)	Original	SLD-980-P50-C-300-05 980nm SLD-980-P50-C-300-05 ridge waveguide semiconductor laser laser diode 980nm	PDF
Contextual Info: 3mm LED CBI Circuit Board Indicator Bi-level Dialight 553-xxxx-300 PART NO. 8.76 [.345] 5.08 [.200] HIGH EFFICIENCY - LED TYPE 01 553-0111-300 553-0122-300 553-0133-300 553-0177-300 2.9 [.115] 5.08 [.200] 9.65 [.380] 2.54 [.100] CATHODE Red/Yel Cathode for	Original	553-xxxx-300	PDF
Contextual Info: SLD-980-P50-C-300-04 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips SLD-980-P50-C-300-04 •Specifications 1 Size : (2) Device: (3) Structure 300300100µm Laser diode bare chip Double channel , single ridge waveguide 300µm ■External dimensions(Unit : m)	Original	SLD-980-P50-C-300-04 980nm	PDF
D-68623 Abstract: DGS9-03AS Contextual Info: DGS 9-03AS DGS 10-03A IFAV = 11 A VRRM = 300 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM Type V Marking V Circuit Package A = Anode, C = Cathode , TAB = Cathode on product A 300 300 DGS 9-03AS C A 300 300 DGS 10-03A C	Original	9-03AS 0-03A O-220 O-220) D-68623 DGS9-03AS	PDF
Contextual Info: MII 300-12A4 MID 300-12A4 MDI 300-12A4 IC25 = 330 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII 300-12A4 MID 300-12A4 MDI 300-12A4 3 3 11 10 9 3 T1 T1 D1 8 D11 D1 8 3 2 8 1 1 9 1 1 9 T2 T2 D2 10 D2 D12 11	Original	300-12A4 E72873 20090812a	PDF
Contextual Info: 3mm LED CBP Circuit Board Indicator Bi-level Dialight 553-XXXX-300 PART NO. L 8.76 [.345] 5.08 j P [ 200] j 553-0111-300 553-0122-300 553-0133-300 553-0177-300 2.9 / [.115] I - T 5.08 9.65 [.380] [. 2 0 0 ] — £ — 2.45 [.100] , u Î- 3.68 [.145]	OCR Scan	553-XXXX-300	PDF
Contextual Info: 2fll2b72 ÜGDH7S6 t.IS Dmlight 553-XXXX-300 LED CBI“Circuit Board I n d i c a t o r _ Bi-level 8.76 [.345] L 5.08 J [ [-200] j 5.08 553-0111-300 553-0122-300 553-0133-300 553-0177-300 [.2 00 ] 2.45 [.100] U 3.68 [.145] I CATHODE Red/Yel Cathode for	OCR Scan	2fll2b72 553-XXXX-300 553reen	PDF
0118J Abstract: osram topled Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 22 mW @ 100 mA im Topled Gehäuse. • Chipgröße 300 x 300 µm2	Original	0118J 0118J osram topled	PDF
GMOY6178 Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 12 mil) F 0594A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2	Original		PDF

300 NM Search Results

300 NM Price and Stock

EW ELECTRONICS SGC3S300NM

Amphenol Times Microwave Systems EZ-300-NMH-X

Amphenol Times Microwave Systems EZ-300-NMH-RA-X

Amphenol Times Microwave Systems TC-300-NMH-X

Dantona Industries Inc SCR-3300NM

300 NM Datasheets Context Search

P1189

Q62702P3586

GEOY6652

J801

Q62702-P3586

163297

A29MA

LMGG27W

k 4110

EN-60825-1

X100M

SLD-980-P50-C-300-05

D-68623

0118J

GMOY6178