3.0 N1 Search Results
3.0 N1 Datasheets (9)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 30N120D2 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.6KB | 1 | ||
SK30N10B-TF
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Shikues Semiconductor | 100V N-Channel MOSFET, RDS(ON),typ.=30mΩ@VGS=10V, Low Gate Charge, Fast Recovery Body Diode, Automotive, DC Motor Control. | Original | ||||
CJU30N10
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JCET Group | N-Channel Power MOSFET CJU30N10 in TO-252-2L package with 100V drain-source voltage, 30A continuous drain current, and 24mΩ on-resistance at 10V gate-source voltage, designed for high voltage switching applications. | Original | ||||
AKP030N12
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AK Semiconductor | N-channel Super Trench II Power MOSFET with 120V drain-source voltage, 215A continuous drain current, 2.4mΩ typical RDS(ON) at VGS=10V in TO-220 package, optimized for high-frequency switching and synchronous rectification. | Original | ||||
HSH30N15A
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Huashuo Semiconductor | N-Ch 150V fast switching MOSFET with 30A continuous drain current, 40mΩ typical RDS(ON), low gate charge, and high cell density trench technology for synchronous buck converter applications. | Original | ||||
AKZE30N10
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AK Semiconductor | N-Channel 100-V MOSFET with 35 A continuous drain current, 0.030 ohm drain-source on-resistance at 10 V gate voltage, and 175 °C maximum junction temperature in a TO-252 package. | Original | ||||
CXG30N120H
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CREATEK Microelectronics | 1200V, 30A IGBT in TO-247 package with VCE(sat) of 2.1V typical at VGE=15V, designed for high-efficiency motor control, UPS, and inverter applications featuring rugged performance and soft switching characteristics. | Original | ||||
HSP30N15A
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Huashuo Semiconductor | N-Ch 150V Fast Switching MOSFET with 30A continuous drain current, 40 mΩ typical RDS(ON), 23 nC total gate charge, and 81W power dissipation in TO-220 package. | Original | ||||
SLD30N15T
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Maplesemi | N-channel 150V 30A Power MOSFET with typical RDS(on) of 37.0 mΩ at VGS = 10 V, designed for motor drives, DC/DC conversion, and power management applications. | Original |
3.0 N1 Price and Stock
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Micro Commercial Components MCB130N10YA-TPN-CHANNEL MOSFET, D2-PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MCB130N10YA-TP | Digi-Reel | 3,032 | 1 |
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| MCB130N10YA-TP | Cut Tape | 3,032 | 1 |
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| MCB130N10YA-TP | Tape & Reel | 3,032 | 800 |
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Infineon Technologies AG ISC030N12NM6ATMA1OPTIMOS 6 POWER-TRANSISTOR,120V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ISC030N12NM6ATMA1 | Tape & Reel | 2,939 | 5,000 |
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| ISC030N12NM6ATMA1 | Cut Tape | 2,939 | 1 |
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| ISC030N12NM6ATMA1 | Digi-Reel | 2,939 | 1 |
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ISC030N12NM6ATMA1 | Cut Tape | 936 | 1 |
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| ISC030N12NM6ATMA1 | Tape & Reel | 936 | 100 |
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ISC030N12NM6ATMA1 | 5,000 |
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ISC030N12NM6ATMA1 | 53 Weeks | 5,000 |
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onsemi FDB0630N1507LMOSFET N-CH 150V 130A TO263-7 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB0630N1507L | Tape & Reel | 896 | 800 |
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| FDB0630N1507L | Digi-Reel | 896 | 1 |
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FDB0630N1507L | 3,200 | 1 |
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FDB0630N1507L | 800 |
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FDB0630N1507L | 14,261 |
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FDB0630N1507L | 21 Weeks | 800 |
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FDB0630N1507L | 21 Weeks | 800 |
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FDB0630N1507L | 117,054 |
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IXYS Corporation IXTQ130N10TMOSFET N-CH 100V 130A TO3P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTQ130N10T | Tube | 296 | 1 |
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JRH ELECTRONICS 440HH030N1104-BCONNECTOR BACKSHELL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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440HH030N1104-B | Bulk | 52 | 1 |
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