2ZZ MARKING Search Results

199S

Abstract: LNV810105A
Contextual Info: Approved Checked Designed 2ZZ ¿DEVELOPMENT S PE C I F I C A T I O N P/N: •¥ L N V 8 1 0 1 0 5 A_ 25. 4 2. 5 4 X 9 = 2 2 . 8 6 2. 5 4 I 8 5. 0 8 1. 5 2 ID 1-H tirtirtirh riirh rh itiriirti o in m m m Y Gr a y c oa t i n g a o ' <© ’ CO Z + 1. 0

Contextual Info: OD CO O CO RATING VO LTAG E 50V AC CURRENT 0. 3A co o APPLICABLE CONNECTOR O o O + CD STORAGE TEMPERATURE RANGE —1 o -35°C TO +85°C NOTES 1 1 OPERATING TEMPERATURE RANGE O o O A P P L IC A B L E S T A N D A R D D F17#(*) -*D S-0. 5V (*) SPECIFICATIONS

2zz marking code

Contextual Info: Semiconductor, Inc. TCM828 TCM829 SWITCHED CAPACITOR VOLTAGE CONVERTERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TCM828/829 are CMOS “charge-pump” voltage converters in ultra-small SOT-23A-5 packages. They invert and/or double an input voltage which can range from +1,5V

Contextual Info: Semiconductor, Inc. TC828A SWITCHED CAPACITOR VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC828A is a CMOS “charge-pump” voltage con­ verter in an ultra-small SOT-23A-5 package. It can invert and/or double an input voltage that can range from +1,8V to

PQ07RX11

Abstract: vcd IC 7RX11 ultrasonic cleaning driving circuit nl 746
Contextual Info: PREPARED BY: DATE: ft, /<? . No. SHAR ED-99226 November 10, 1999 14 Pages DATE: APPROVED BY: /%/. Tl&.i'.'V ELECTRONIC COMPONENTS GROUP SHARP CORPORATION DIVISION SPECIFICATION VICES DIV. .DEVICE SPECIFICATION FOR VOLTAGE REGULATOR MODEL No. PQ07RX11 1. These specification sheets include materials protected under copyright of Sharp Corporation "Sharp" .

marking a70 8 pin ic

Contextual Info: MOS INTEGRATED CIRCUIT mPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /iPD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs w ith optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

SI HV5

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿ ¿ P D 4 2 6 4 16 5 , 4 2 6 5 16 5 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READA/VRITE MODE Description T h e;/P D 426 416 5, 4265165 are 4,194.304 w ords by 16 bits C M OS dynam ic RAMs with optional h yper page mode

PD42S

Contextual Info: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s