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philips 8051 microcontroller bootloader isp data

Contextual Info: CRD89C512RD Technologies Inc. Datasheet Rev 1.0 CRD89C512RD 8-Bit Microcontroller with 2x64KB ISP Flash, 1KB of SRAM, PWMs Product List Feature Set CRD89C512RD-40 5V, 40MHz 128KB ISP flash MCU • • • Description • • • • • • • • • •

A15A

Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
Contextual Info: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x

Contextual Info: White Electronic Designs EDI8L21665V 2x64Kx16 SRAM FEATURES DSP Memory Solution The EDI8L21665VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.

Contextual Info: EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES • 2x64Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Linear and Sequential Burst Support via MODE pin • Clock Controlled Registered Bank Enables E1\, E2\ •

Contextual Info: ^EDI EDI2KG41864V 576Kilobyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 2x64Kx18, 3 .3 V Module Features Synchronous Flow-Through • 4x64K x18 Synchronous • Flow-Through A rchitecture • C lock Controlled Registered Bank Enables E1\, nized as 4x64Kx18.

Contextual Info: ^EDI EDI2AG27265V 1Megabyte Sync/Sync Burst, Sm all Outline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64kx72 Synchronous, Synchronous Burst The EDI2AG27265VxxD1 is a Synchronous/Synchro­ nous Burst SRAM, 72 position 30 DIMM 144 contacts

Contextual Info: EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES The EDI2CG27264VxxD2 is a Synchronous/Synchronous Burst 2x64Kx72 Synchronous, Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, small outline. Flow-Through Architecture The Module contains four (4) Synchronous Burst Ram Devices,

Contextual Info: EDI8L21665V 9 *fijiifiiiR Asvn^hrnnw is ^0V w N The EDI8L21665V is a memberof EDTs Asynchronous SRAM family designed in support of Texas instruments TMS320C5x DSPs. The 2x64Kx16SRAMisa3.3V, 2 megabit SRAM constructed with two 64K x 16 die mounted on a multi-layer substrate. Thedeviceis

2x16K

Abstract: DSP16210 MO-151
Contextual Info: ^EDI DSP SOLUTIONS Memory Solution for lucentTechnologies DSP16210 ELECTRONIC DESIGNS, INC. EDI8I21665V 2x64Kxl6 Asynchronous SRAM The EDI8L21665V is a member of EDI’s Asynchronous SRAM family designed in support of LucentTechnologies DSP16210 DSPs. The

A15A

Abstract: A15B EDI8L21664V MO-151 9704 64k x 16 SRAM
Contextual Info: EDI8L21664V 2x64Kx16 SRAM TMS320C54x External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA. Operating with a 3.3V power supply and with access

AA01

Abstract: aa11
Contextual Info: EDI2AG27265V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES • 2x64kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Sequential Burst MODE • Clock Controlled Registered Bank Enables E1\, E2 • Clock Controlled Byte Write Mode Enable (BWE\)

Contextual Info: ^EDI ECH2AG27264V 1Megabyte Sync/Sync Burst, SmallOutline DIMM •ELECTRONIC DESISM5, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64Kx72 Synchronous, Synchronous Burst The EDI2AG27264VxxD1 is a Synchronous/Synchro­ • Flow-Through Architecture

Contextual Info: ^EDI EDI2AG27265V 1Megabyte Sync/Sync Burst, Small Outline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64kx72 S ynchronous, S ynchronous Burst The EDI2AG27265VxxD1 is a S ynchronous/S ynchro­ Flow-Through A rchitecture

JEDECMO-151

Abstract: A15B
Contextual Info: ^EDI EDI8L21664V h ELECTRONIC DESIGNS, INC 2xS4Kx1SSRAM TMS320C54X External SRAM Memory Solution Features The E D I8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith tw o 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x

Contextual Info: DSP SOLUTIONS Memory Solution for Lucent Technologies DSP16210 H f l L . LX I ELECTRONIC DESIGNS, INC. EDI8I21665V 2x64Kx16 Asynchronous SRAM The EDI8L21665V is a member of EDI’s Asynchronous SRAM family designed in support of Lucent Technologies DSP16210 DSPs. The

A15B

Contextual Info: ^EDI EDI8L21664V h El£CTRO*«C 0C9CN& NC.1 2xS4KxieSRAM TMS320C54XExternalSRAM MemorySolution F eatures The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi­ layer laminate substrate. The device is packaged in a 74

Contextual Info: ^EDI EEH2AG27265V 1Megabyte Sync/Sync Burst, ^ ^ ^ ^ S m a ll Outline DIMM •ELECTRONIC DESI SMS, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64kx72 Synchronous, Synchronous Burst ■ Flow-Through Architecture • Sequential Burst MODE

LH Research

Contextual Info: EDI2AG27264V 1 Megabyte Sync/Sync Burst, SfTISlI O utline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64Kx72 Synchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro­ Flow-Through A rchitecture

A15B

Abstract: A15A EDI8L21664V MO-151
Contextual Info: EDI8L21664V TMS320C54x External SRAM Memory Solution FEATURES DESCRIPTION n DSP Memory Solution The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.

diode a15a

Abstract: A15A A15B TMS320C5x dsp block diagram MO-151 a014g
Contextual Info: EDI8L21665V 2x64Kx16 SRAM, DSP Memory Solution FEATURES DESCRIPTION • Access Times of 10, 12 and 15ns The EDI8L21665VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.

Contextual Info: ^EDI EDI2AG27265V 1 Megabyte Sync/Sync Burst, ^ m S m a l l Outline DIMM ELECTRONIC DESIGNS, IN C A DVANCED 2x64Kx72, 3.3V Module Features Sync/Sync B urst Flow-Through • 2x64kx72 S ynchronous, S ynchronous Burst • Flow-Through A rchitecture • Sequential B urst MODE

Contextual Info: T T ir r \| K n A I“ 1 1 EDI2AG27264V 1Megabyte Sync/Sync Burst, Small Outline DIMM e le c t r o n ic d esig n & in c ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64K x72 S ynchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro­

DG33

Abstract: d036
Contextual Info: ^EDI EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM •ELECTRONIC DESISM5, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64Kx72 Synchronous, Synchronous Burst The EDI2CG27264VxxD2 is a Synchronous/Synchro­ nous Burst SRAM, 72 position DIMM 144 contacts

LH Research mm

Abstract: LH Research
Contextual Info: M D EDI2AG27265V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS, IN C ADVANCED 2x64Kx72, 3.3V I Module Features Sync/Sync Burst Flow-Through ♦ 2x64kx72 S ynchronous, S ynchronous Burst The EDI2AG27265VxxD1 is a S ynchronous/S ynchro­