2U MARKING CODE DIODE Search Results

KSH200

Abstract: BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003
Contextual Info: Surface Mount Darlington Transistors hFE Part No., Marking Code and Polarity VCEO NPN MMBT6427 TMPT6427 MMBTA13 MMBTA14 - IC MMBTA63 MMBTA64 V (A) 40 40 30 30 30 30 0.5 0.5 0.3 0.3 0.5 0.5 2U 2V V C E(sat) & V B E(sat) @ I C & IB fT @ VCE & IC Package PNP

marking 2U diode

Abstract: marking 2U 02 diode glass diode marking 2U
Contextual Info: Doc No. TT4-EA-11538 Revision. 4 Product Standards Zener Diode DZ2J0270L DZ2J0270L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11771 Revision. 3 Product Standards Zener Diode DZ2S0270L DZ2S0270L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J027 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

D1NL20U

Abstract: marking 2U diode AX057
Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE Package I AX057 D1NL20U Unit : mm Weight 0.19k Typ ♦1 2 0 0 V 1A <2> i Feature •s v -rx • Low Noise • trr=35ns • tnr=35ns 02.6 *2 o® - w - Main Use • Switching Regulator « 1» ¡ » S M B * 2 tt« 3 -K

marking 2U diode

Abstract: marking 2U 20 diode diode marking code 2U diode marking 2U marking code DIODE 2U diode 2u marking code marking 2U 40 diode 2U marking code diode
Contextual Info: Super Fast Recovery Diode Axial Diode W tm D1NL20U OUTLINE Package : AX057 U nit-m m W eight 0.19g Typ 200V 1A Feature UJ 02.6 • Low Noise • m s 'ix • trr= 3 5 n s • trr=35ns 0> -M - Main Use • Fly Wheel • ÍM .0 A J M 3 • Home A ppliance, Office Autom ation, Lighting

D1NS4 diode

Abstract: AX057 marking aaat ji13t
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS4 Unit : mm Weight 0.19k T yp 40 V 1A 2^ i Feature 02.6 • Tj=150°C • P rr sm Rating • Tj=15CfC • P r r s m P K ^ V î/ x (S ü E *2 -M - Main Use • • • • • DC/D c u y j t —?

smd diode schottky code marking 2U

Abstract: smd diode marking 2U smd diode marking codes 2U 2U marking code diode smd smd diode marking A3 sot23 MV smd marking code SOT23 sot143 marking code A3 smd diode code marking 2U marking l4 sot-23 SMD DIODE 2U
Contextual Info: SMD SCHOTTKY DIODES DESCRIPTION • Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/

marking 2U diode

Abstract: D1NL20U 1NL20U DIODE MARKING 2U L20U
Contextual Info: n - n x ^ -c r— K Super Fast Recovery Diode Axial Diode O U TLIN E D IM E N SIO N S D1NL20U Unit • mm Package I AX057 o 200V 1A hLO rn ±0.1 2 0 MIN •trr3 5 n s -2 0 m in -M - • 5 m m \d " j m «EPM f Marking

dz2j027

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J027 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature

SSMini2-F5-B

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2S027 (Tentative) Silicon epitaxial planar type For constant voltage • Package  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit IFRM 200 mA PT 150 mW Junction temperature

marking 2U 58 diode

Abstract: marking 2U diode t5 marking code KE diode L31 diode sot-23 marking diode KE SOT23 MARKING KE AT-05 MARKING- L31 diode marking code 2U marking L31 SOT23
Contextual Info: W Ljm H E W L E T T Bita P A C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface M ount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/ iW at 915 MHz up to 35 mV/nW at 2.45 GHz

DIODE marking L12

Contextual Info: SL05 SEMTECH Low Capacitance 300 Watt Surface Mount TVS Diode TEL: 805-498-2111 D E SC R IP T IO N The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over voltages caused by electrostatic discharge ESD ,

GDMBZ5268B

Abstract: GDMBZ5242B GDMBZ5221B GDMBZ5222B GDMBZ5223B GDMBZ5224B
Contextual Info: ISSUED DATE :2004/11/15 REVISED DATE : GDMBZ5221B~GDMBZ5270B Description ZENER DIODES Package Dimensions Millimeter Min. Max. 0.85 1.05 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. A A1 A2 D E HE REF. L b c Millimeter Min. Max. 0.20 0.25 0.10 Q1 0.40

smd diode pj 72

Abstract: smd Pj 73 smd schottky diode marking 72 smd marking pj smd diode marking JC smd diode smd diode pj pj 72 diode smd Pj 75 pj SMD diode
Contextual Info: Schottky Barrier Diode wnnm o u t l i n e Single Diode DE3S6M Unit : nim Package : E-pack Weight 0.326a T yp N 60V 3A Feature • SM D • • SMD P r rsm T K ^ V S /i & S I • » 'J i3 ü * S S 3 S g l T yp«* N o. I '\ ^ ^ 3 • D C /D C • mm. y-A.oAfâgg

DZ2S027

Abstract: marking 2u marking 2U 20 diode marking 2U 40 diode marking 2U diode DZ2J027 ZKE00100BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2S027 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type DZ2J027 in SSMini2 package • Features  Package  Excellent rising characteristics of zener current Iz

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2S027 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type DZ2J027 in SSMini2 type package • Features  Package  Excellent rising characteristics of zener current Iz

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J027 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type • Features  Package  Excellent rising characteristics of zener current Iz

dz2s027

Abstract: dz2j027 zener 2J
Contextual Info: DZ2S027 Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J027 in SSMini2 type package • Features  Excellent rising characteristics of zener current Iz  Low zener operating resistance RZ  Halogen-free / RoHs compliant

DTC123J

Abstract: EML20 RB521S-30
Contextual Info: EML20 Transistors General purpose transistor isolated transistor and diode EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4)

ATX POWER SUPPLY 600W circuit diagram

Abstract: S5000XALR d33025* manual intel 965 motherboard circuit diagram HDR4P J4f1 Intel Error Code 8110 S5000XAL 114101 S5000PAL
Contextual Info: Intel Server Board S5000PAL / S5000XAL Technical Product Specification Intel order number: D31979-010 Revision 1.9 March 2009 Enterprise Platforms and Services Division – Marketing ii Revision 1.9 Intel order number: D31979-010 Intel® Server Board S5000PAL / S5000XAL TPS

ATI ES1000 resolution

Abstract: 12085 sensor mouse S5000XALR ATI ES1000 ati es1000 specification atx power supply 650w S5000XAL j1g2 s5000 ipmb header IBM 8213 motherboard
Contextual Info: Intel Server Board S5000PAL / S5000XAL Technical Product Specification Intel order number: D31979-010 Revision 1.7 February 2008 Enterprise Platforms and Services Division – Marketing ii Revision 1.7 Intel order number: D31979-010 Intel® Server Board S5000PAL / S5000XAL TPS

60nag

Contextual Info: SIPMOS N Channel MOSFET BSP 88 Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcs = 240V • Continuous drain current I o = 0.29A • Drain-source on-resistance • Total power dissipation flbs on = 8.0Q P0 = 1.5W Type Marking Ordering code for

600V 25A Ultrafast Diode

Abstract: GE power diode IC OZ 9936 in 4436 Ir 900v 60a ir igbt 1200V 40A 035H IRGP30B120KD-E PW80 irgp30b120
Contextual Info: PD- 93818A IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 s Short Circuit Capability

1000w buck boost converter

Contextual Info: 2015 Product Catalog Advancing The Power Curve Headquartered in Boxborough, Massachusetts, at the location of its manufacturing operations, SynQor is a privately owned U.S. AS9100 and ISO9001 company. SynQor’s converters feature a patented two-stage power topology that greatly