2SK974 HITACHI Search Results

Contextual Info: 2SK974 L , 2SK974(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK974S

Abstract: 2sk974 hitachi
Contextual Info: 2SK974 L , 2SK974(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed pow er switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for m otor drive. DC-DC converter, pow er switch and solenoid drive

2SK974

Abstract: 2SK974S Hitachi DSA0015
Contextual Info: 2SK974 L , 2SK974(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK970

Abstract: diode 50v 5A 2SK974 2SK1093 4AK16 SP-10 2sk109
Contextual Info: HITACHI 4AK16 SILIC O N N-CHANNEL P O W E R M O S F E T A RRA Y HIGH S P E E D P O W E R SW ITCH ING • FEATURES I • Low On-Resistance Ros on ^ 0.18 Í1 , = 10 V, ln = 5 A R ds (on) ^ 0.25 £2 , VGS = 4 V, l0 = 5 A • Capable of 4 V Gale Drive • Low Drive Current

Contextual Info: 4AK16 blE D IHIT4 HITACHI/ OPTOELECTRONICS S ILIC O N N -C H A N N EL P O W ER M O S F E T ARRAY 26 5 ± 0 3 HIGH SPEED POWER SW ITCHING • FEATURES • Low On-Resistance RDS (° n) — °-18 • Capable of 4 V Gate Drive • Low Drive Current • High Speed Switching

2SJ235

Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow

2sj217

Abstract: pf0030 hitachi 2SJ295 2SK1919 PF0040 KWSA103 PF0030 PF0042 2SJ214 2SJ220
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m

2sk1299

Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in

2sk1299

Abstract: 2SK1763 2SK1878 2sj177 2SJ295 2SK1579 TO220FM 2SJ244 2sj235 2SJ246
Contextual Info: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D-IV L Series Item Package

2SK44

Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
Contextual Info: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be

2sj177

Abstract: 2sk1778 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SK97-2 2sk1301 2sj175
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

Hitachi PF0030

Abstract: 25K1772 2sk1299 PF0040 2SJ295 KWSA103 PF0030 PF0042 2SJ299 2sk1205
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

2SK1254

Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2sj2 high voltage p channel mosfet

Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1204 2SK1763 2SJ175 2SK1665 2SK1776
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK974S

Abstract: Hitachi DSA002759
Contextual Info: 4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS on ≤ 0.18 Ω, VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 Ω, VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching

flyback 200w

Abstract: 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1094 2sk1328 2SK1762
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other.

PF0040

Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices

2SK1778

Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

Hitachi DSA002751

Contextual Info: 4AK16 Silicon N-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance RDS on ≤ 0.18 Ω, VGS = 10 V, ID = 5 A RDS(on) ≤ 0.25 Ω, VGS = 4 V, ID = 5 A • Capable of 4 V gate drive • Low drive current

2SK1778

Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SJ113

Abstract: 2cv1 2SK1665 2SK513 2SK1635 121A-4 2SJ214 2SK1094 GN12030 2SK1152
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other.

25K1772

Abstract: 2SK1763 2SJ300 2SJ214 2SJ295 2sk mosfet TO220FM 2SJ244 2SK1645 2SJ246
Contextual Info: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D -IV L Series Item Package

2SJ235

Abstract: 2sk1299 2SJ182 2SJ244 2SJ250 2SK1336 2SK1337 2SK1579 2SK1697 2SK1698
Contextual Info: 8 1.5.3 HITACHI DlII-Series DIII-L Series Low Voltage Range, VDSS up to 120V The third generation of D-Series MOSFETs from Hitachi benefits from the latest development in Power MOSFET technology. The low voltage range of DIH-Series MOSFETs has the following enhanced features:-