2SK407 Search Results

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4071 SWITCHING N-CHANNEL MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4071 is the best switching element for the DC-DC φ 5.2 MAX. converter usage to 24 V in the direct current input voltage. 5.5 MAX. It excels in the switching characteristics in low on-state

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK4072 Silicon N-channel MOSFET For switching circuits Unit: mm 0.40+0.10 –0.05 • Features  High-speed switching  Wide frequency band 0.16+0.10 –0.06 Rating

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

K4073

Abstract: RL067 2SK4073LS A0500
Contextual Info: 2SK4073LS 注文コード No. N A 0 5 0 0 三洋半導体データシート N 2SK4073LS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・超低オン抵抗。 ・ロード S / W 用等。 ・アバランシェ耐量保証。

d1878

Abstract: D1857 2SK4070 2SK4070-S15-AY 2SK4070-ZK-E1-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK4072 Silicon N-channel MOSFET For switching circuits Unit: mm 0.40+0.10 –0.05 • Features  High-speed switching  Wide frequency band 0.16+0.10 –0.06 2 1

k4074

Abstract: A1203 2SK4074LS 2sk4074 DIODE 76A
Contextual Info: 2SK4074LS Ordering number : ENA1203 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4074LS General-Purpose Switching Device Applications Features • • • Ultralow ON-resistance. Motor drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C

K4074

Abstract: 2sk4074 A12034 A1203 Er107 K407 A12031
Contextual Info: 2SK4074LS 注文コード No. N A 1 2 0 3 三洋半導体データシート N 2SK4074LS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・超低オン抵抗。 ・モータドライブ用等。

k4075

Abstract: 2SK4075 TRANSISTOR K4075 2sK4075 TRANSISTOR 2sk*4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY 2SK4075-ZK NEC Date code Marking 2SK40
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4075-ZK-E1-AY Pure Sn Tin 2SK4075-ZK-E2-AY

K4073

Abstract: RL067 2SK4073LS
Contextual Info: 2SK4073LS Ordering number : ENA0500 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4073LS General-Purpose Switching Device Applications Features • • • Ultralow ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK4072 Silicon N-channel MOSFET For switching circuits Unit: mm 0.40+0.10 –0.05 • Features  High-speed switching  Wide frequency band 0.16+0.10 –0.06 Drain-source surrender voltage

K4077

Abstract: 2sk4077 2SK4077-ZK d1846 2SK4077-ZK-E1-AY 2sk4077-zk-e1 transistor NEC 2500 NEC TRANSISTOR MARKING CODE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4077 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4077 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE

2SK425

Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418

2SK425

Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433
Contextual Info: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL

2SK4072

Abstract: 2sk40
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK4072 Silicon N-channel MOSFET For switching circuits Unit: mm 0.40+0.10 –0.05 • Features  High-speed switching  Wide frequency band 0.16+0.10 –0.06 VDSS

2sk4071

Abstract: SC-43A D1838
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4071 SWITCHING N-CHANNEL MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4071 is the best switching element for the DC-DC φ 5.2 MAX. converter usage to 24 V in the direct current input voltage. 5.5 MAX. It excels in the switching characteristics in low on-state

K4076

Abstract: 2SK4076 LOT CODE NEC 2SK407 2SK4076-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4076 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4076-ZK-E1-AY Pure Sn Tin

K4078

Abstract: C277C nec 277c nec marking code 277 C 277 C 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY 2SK4078 D18885EJ1V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4078 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4078-ZK-E1-AY Note 2SK4078-ZK-E2-AY

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15