2SK39 Search Results

2SK3926-01MR

Contextual Info: 2SK3926-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

max 1786

Abstract: 2SK3929-01MR
Contextual Info: 2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

2SK3928-01

Contextual Info: 2SK3928-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

2sk3944

Contextual Info: 2SK3944 注文コード No. N 8 3 3 0 2SK3944 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

48v 100a

Abstract: scd 301 2SK3913-01MR 2sk3913
Contextual Info: 2SK3913-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

2SK3918

Abstract: *K3918 SMD transistor Mu SMD TRANSISTOR 12a 2SK3918 equivalent
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3918 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 5 V drive available 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1

K3903

Abstract: 2SK3903 SC-65
Contextual Info: 2SK3903 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3903 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 0.32 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5 S (標準)

K3935

Abstract: 2SK3935
Contextual Info: 2SK3935 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3935 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 10 S (標準)

k3934

Abstract: transistor k3934 K-393 2SK3934 2SK3934 equivalent
Contextual Info: 2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3934 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23 Ω (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.)

K3936

Abstract: 2SK3936 SC-65
Contextual Info: 2SK3936 シリコンNチャネルMOS形 MACHⅡ π−MOSⅥ 東芝電界効果トランジスタ 2SK3936 ○ スイッチングレギュレータ用 単位: mm • ゲート入力電荷量が小さい。 • 逆回復時間が早い。 : trr = 380 ns (標準)

2SK3935

Abstract: K3935
Contextual Info: 2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3935 Switching Regulator Applications Unit: mm z Low drain-source ON resistance: RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance: |Yfs| = 10 S (typ.) z Low leakage current:

Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1

2SK3977

Contextual Info: 2SK3977 Ordering number : ENA0391 SANYO Semiconductors DATA SHEET 2SK3977 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4.5V drive Specifications Absolute Maximum Ratings at Ta=25°C

D1707

Abstract: 2SK3919 2SK3919 equivalent 2SK3919-ZK 2SK39
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3919 TO-251 MP-3 2SK3919-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching

D1717

Abstract: 2SK3902 2SK3902-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3902 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3902-ZK TO-263 MP-25ZK

k3995

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) 2SK3939 Silicon N-channel MOS FET For switching circuits • Package  High-speed switching  Optimum for high-density mounting and downsizing of the equipment for

2SK3979

Abstract: k3979
Contextual Info: 2SK3979 Ordering number : ENA0263A 2SK3979 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

transistor k3934

Abstract: K3934 2SK3934
Contextual Info: 2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3934 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23Ω (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) 2SK3973G Silicon N-channel MOS FET For switching circuits • Features  Package  Low ON resistance Ron  High-speed switching  Allowing 1.8 V drive  SSSMini type package, allowing downsizing of the equipment and

2SK3937

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487C Silicon N-channel MOSFET For switching circuits • Basic Part Number 1 5° 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5° 0.10 max. 0.55±0.05 Display at No.1 lead  2SK3937 x 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3973 Silicon N-channel MOSFET For switching circuits Unit: mm • Features 0.33+0.05 –0.02  Low ON resistance Ron  High-speed switching  Allowing 1.8 V drive

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) 2SK3939 Silicon N-channel MOS FET For switching circuits • Features  Package  High-speed switching  Optimum for high-density mounting and downsizing of the equipment for

2SK3937

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487C Silicon N-channel MOSFET For switching circuits • Basic Part Number 1 5° 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5° 0.10 max. 0.55±0.05 Display at No.1 lead  2SK3937 x 2