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    K3935 Price and Stock

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    Ohmite Mfg Co OK3935E-R52

    Carbon Film Resistors - Through Hole 39K Ohm 1/4W 5% 250 Volt
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    Mouser Electronics OK3935E-R52 49,020
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    RS OK3935E-R52 Bulk 24 Weeks 50,000
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    Master Electronics OK3935E-R52
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    Bourns Inc CAT10-330J4LF

    Resistor Networks & Arrays 33ohm 5% Concave 4resistors
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    TTI CAT10-330J4LF Reel 30,000 10,000
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    Vishay Intertechnologies CRCW0603487KFKEA

    Thick Film Resistors - SMD 1/8 Watt 487Kohms 1%
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    TTI CRCW0603487KFKEA Reel 25,000 5,000
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    Vishay Intertechnologies 562R10TSD10

    Ceramic Disc Capacitors 1Kvolts .001uF 10%
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    TTI 562R10TSD10 Bulk 16,500 500
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    Phoenix Contact 3044128

    DIN Rail Terminal Blocks UT 4-PE
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    TTI 3044128 Bulk 5,882 2
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    K3935 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3935

    Abstract: 2SK3935
    Contextual Info: K3935 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3935 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 10 S (標準)


    Original     		2sk3935sc-672-10u1bk3935 PDF

    2SK3935

    Abstract: K3935
    Contextual Info: K3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3935 Switching Regulator Applications Unit: mm z Low drain-source ON resistance: RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance: |Yfs| = 10 S (typ.) z Low leakage current:


    Original     		2sk3935k3935 PDF

    K3935

    Abstract: 2SK3935 MJ10100
    Contextual Info: K3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3935 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 0.18Ω z High forward transfer admittance : |Yfs| = 10 S (typ.) (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 450 V)


    Original     		2sk3935k3935mj10100 PDF

    K3935

    Abstract: 2sk3935
    Contextual Info: K3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3935 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 0.18Ω z High forward transfer admittance : |Yfs| = 10 S (typ.) (typ.) z Low leakage current : IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2sk3935k3935 PDF

    K3935

    Abstract: 2SK3935
    Contextual Info: K3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3935 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.18Ω High forward transfer admittance : |Yfs| = 10 S (typ.) (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2sk3935k3935 PDF