2SK363 Search Results

2SK3637

Contextual Info: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3637 1 .2 7 -0+ 0.1.1 TO-263 Features Low on-resistance, low Qg Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1

ciss

Abstract: 2SK3635
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3635 TO-252 Features High voltage: VDSS = 200 V Gate voltage rating: +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 30 V Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode

2SK3636

Contextual Info: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3636 TO-263 Avalanche energy capacity guaranteed: EAS 20 mJ +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 No secondary breakdown +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

Contextual Info: 2SK3633 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。

2SK3638

Abstract: 2SK3638-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE

toshiba a114

Abstract: 2SK3633 SC-65 K3633 200VW
Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)

Contextual Info: NEW PRODUCTS 5 NEW SERIES OF POWER MOSFETs FOR DC 48 V INPUT DC-DC CONVERTER 2SK3634/2SK3635/µPA1740TP Masahiro Haizumi* This series of N-channel power MOSFETs with a drain-source voltage VDSS rated at 200 V is ideal for the on-board DC-DC converter (on-board power supply) of

2SK3559

Abstract: IDA-20
Contextual Info: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal

2SK3637

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching Symbol Rating Unit Drain-source surrender voltage VDSS 200 V VGSS ±30 V Drain current

Contextual Info: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

TO-252 MP-3ZK

Abstract: 2SK3638 2SK3638-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE

2sk152 equivalent

Abstract: 2SJ44 2SK113 2SK152
Contextual Info: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters

transistor gds

Contextual Info: TOSHIBA 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR i <; SILICON N CHANNEL JUNCTION TYPE \c 3 ft 3 FOR AUDIO AM PLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND U nit in mm IMPEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage • TTicrVi— Tnm it Tmr>prl»nr»p

2SK363

Contextual Info: TO SH IB A 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK363 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : V j u g = —40V • High Input Impedance : lQ g g = —l.OnA (Max.

2SK3633

Abstract: K3633 VDD400 SC-65
Contextual Info: 2SK3633 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。

Contextual Info: Transistors IC SMD Type Product specification 2SK3636 TO-263 Avalanche energy capacity guaranteed: EAS 20 mJ +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 No secondary breakdown +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type Product specification 2SK3637 1 .2 7 -0+ 0.1.1 TO-263 Features Low on-resistance, low Qg Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2

Contextual Info: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit

2SK3638

Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3638 TO-252 Low Ciss: Ciss = 1100 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 MAX. VGS = 4.5 V, ID = 18 A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 15 m Unit: mm +0.1

2SK3634-Z

Abstract: 2SK3634
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3634 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3634 is N-channel MOS FET device that features PART NUMBER PACKAGE 2SK3634 TO-251 MP-3 2SK3634-Z TO-252 (MP-3Z) a low on-state resistance and excellent switching

d1593

Abstract: 2SK3635 2SK3635-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3635 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3635 is N-channel MOS FET device that features PART NUMBER PACKAGE 2SK3635 TO-251 MP-3 2SK3635-Z TO-252 (MP-3Z) a low on-state resistance and excellent switching

2SK363

Abstract: 2SK363 transistor
Contextual Info: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK3637

Contextual Info: Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 200 V VGSS ±30 V Drain current ID 50 A Peak drain current IDP 200 A EAS 2 000 mJ PD

2SK3634

Abstract: mosfet 60a 200v
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3634 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 High voltage: VDSS = 200 V Low Ciss: Ciss = 270 pF TYP. VDS = 10 V, VGS = 0 V Built-in gate protection diode