2SK307 Search Results

Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

Contextual Info: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

2SK3074

Abstract: all mosfet vhf power amplifier transistor marking zg
Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET 2SK3079A Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V 6.0V Vgs = 0.5V ~ 1.8 8 V 1. Vgs = 0.5V ∼ 1.8V 0.05V

Hitachi DSA00276

Contextual Info: 2SK3076 L ,2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jul. 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 D

2SK3079

Contextual Info: 2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power Gain : PO = 35.5 dBmW (Min.) : GP = 9.5 dB (Min.) Drain Efficiency : ηD = 58% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2sk3078

Contextual Info: 2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power : PO = 27.0 dBmW (Min.) Gain : GP = 12.5 dB (Min.) Drain Efficiency : ηD = 46% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SK3077

Contextual Info: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power : PO = 15.0 dBmW (Min.) Gain : GP = 15.0 dB (Min.) Drain Efficiency : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SK3077

Contextual Info: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.

2SK3075

Abstract: 2SK3075 MOSFET TRANSISTOR
Contextual Info: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

Hitachi DSA00280

Contextual Info: 2SK3070 L ,2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition Feb. 1999 Features • Low on-resistance R DS(on) =4.5mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline LDPAK

Contextual Info: 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

Contextual Info: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Output Power : PO ≥ 7.5W Power Gain : GP ≥ 11.7dB Drain Efficiency : ηD ≥ 50% MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC

Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C

ta-1670

Abstract: 2SK3072 TA1670
Contextual Info: 2SK3072 Ordering number : ENN7224A N-Channel Silicon MOSFET 2SK3072 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. Low-voltage drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions

2Sk3077

Contextual Info: 2SK3077 東芝電界効果トランジスタ シリコン N チャネル MOS 形 2SK3077 ○ UHF 帯電力増幅用 単位: mm ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使 用されることを意図しています。他の用途に使用することは意図もされてい

2SK3079A

Contextual Info: 2SK3079A 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK3079A ○ 470 MHz 帯増幅用 単位: mm ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使 用されることを意図しています。他の用途に使用することは意図もされてい

2SK3077A

Contextual Info: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 20.5dBmW · Gain: Gp ≥ 10.5dB · Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics

Contextual Info: TOSHIBA Discrete Devices RF P ower MOSFET Power 2SK3078A Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V 6.0V Vgs = 0.5V ~ 1.7 7 V 1. Vgs = 0.5V ∼ 1.7V 0.05V

2SK3075 MOSFET TRANSISTOR

Contextual Info: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Output Power : PO ≥ 7.5W Power Gain : GP ≥ 11.7dB Drain Efficiency : ηD ≥ 50% MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC

Contextual Info: 2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power : PO = 27.0 dBmW (Min.) Gain : GP = 12.5 dB (Min.) Drain Efficiency : ηD = 46% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2sk3078

Contextual Info: 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm • • • Output power: Po > = 28.0dBmW Gain: Gp > = 8.0dB Drain Efficiency: ηD > = 50% Maximum Ratings Ta = 25°C Characteristics

2SK3078

Contextual Info: 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 28.0dBmW • Gain: Gp ≥ 8.0dB • Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics

Contextual Info: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.