2SK192A BL Search Results

2SK192A

Abstract: 2SK192
Contextual Info: T O S H IB A 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK192A FM TUNER APPLICATIONS U nit in mm VHF BAND AM PLIFIER APPLICATIONS 4 .2 M A X . • High Power Gain : G pg = 24dB Typ. (f = 100MHz) • Low Noise Figure : N F = 1.8dB (Typ.) (f= 100MHz)

K192a

Contextual Info: T O SH IB A 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure : NF=1.8dB (Typ.) (f=100MHz)

2sk192

Abstract: 2SK192A BL 2SK192A
Contextual Info: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A FM TUNER APPLICATIONS U nit in mm VHF BAND AM PLIFIER APPLICATIONS 4.2M AX. • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure : NF = 1.8dB (Typ.) (f= 100MHz)

2SK192A

Contextual Info: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 0.55MAX. 0.4 CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature

Contextual Info: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 0.55MAX. 0.4 CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature

2SK192A

Abstract: transistor ag qs 24E1D
Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK192A U nit in nun FM TU N ER A PP LIC A T IO N S . V H F B A N D A M P LIF IE R A PP LIC A T IO N S . • • • i High Power Gain : Gpg = 24dB Typ. (f= 100MHz) Low Noise Figure : NF = 1.8dB (Typ.) (f= 100MHz)

2SC3378

Abstract: 2SK118 2SC245S 2sa137 2SA1048 2SA1049 2SA1150 2SC2458 2SC2469 2SC2710
Contextual Info: Powered —3 O n X by H 2. MINI PACKAGE SERIES CD ICminer.com > rH H H n 73 m Electronic-Library —3 m \ Application o "O '— 3 O General Purpose’* Low Noise High Voltage High Current Ji High Current O X m m o Low Impedance Low N< H Audio Drive & Out

SV153A

Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Contextual Info: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670

2SK192A

Abstract: 2SK168 2SK161 2SK19 2sk193
Contextual Info: F - » J* M± Ê m • 2 S K 161 * 2 H : FM f a - t r l t ® f t l f f l o VHFw S tM t -18 10 200 125 Pd W m • ■ m * m sìt i K î ? y x iî^ ê V 'o C ascode J-FET) • 2S K168 ffiâ: VHF -Mû, jgfflo 0ÏZ Tj (° I d ( h A) Pch(W) îc h C C )

2SC3378

Abstract: 25A1048
Contextual Info: —3 O IA un H CO 3» 2. MINI PACKAGE SERIES rS fc > TRANSISTOR Application NPN PNP 2SC2458 General Purpose’* v CE sat) MAX. hFE Type No. I2SA1048 VCEO •c (V) M l PC ImW) VCE ic IV )' ‘ M ) (V) fjT Y P (MIN.) ■c 1 >B ImA) ImA) VCE (MHz), (V) O C/>

2SC3378

Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
Contextual Info: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16