2SK126 Search Results

Contextual Info: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V)

2SK1267

Abstract: SC-65
Contextual Info: Power F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce Rds on : R DS (on) 1 = 0 .07ft (typ.) Unit: mm • High switching rate : tf= 180ns (typ.) 1 5 .5 m ax . • No secondary breakdown 13.5max.

Contextual Info: 2SK1266 Switching Diodes MA199 Silicon epitaxial planer type Unit : mm For high voltage resistance switching circuit +0.2 2.8 –0.3 +0.25 1.5 –0.05 package and automatic mounting +0.2 1.9±0.2 1.45 ● Small 1 3 +0.1 reverse recovery period trr 0.4 –0.05

Contextual Info: 2SK1265 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)

TC25H

Abstract: TI 09T 2SK12 2SK1261
Contextual Info: P o w e r F-MOS FET 2SK1261 2SK1261 Silicon N-channel Power F-M O S FET • P ackage Dim ensions ■ Features • • • • Low ON resistance RDS on : RDS (on) 1 = 0 .1 6 0 (typ.) High switching rate : tf= 56ns (typ.) No secondary breakdown Low voltage drive is possible (VGs = 4V).

2SK12

Abstract: 2SK1267 SC-65 panasonic 2SC Scans-002934
Contextual Info: Power F-MOS FET 2SK1267 2SK12Ó7 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDS on : RDS (on) l = 0 .0 7 fl (typ.) • High switching ra te : tf= 180ns (typ.) Unit: mm 15.5max. 13.5max. • No secondary breakdow n

Contextual Info: Power F-MOS FET 2SK1260 2SK1260 Silicon N-channel Power F-MOS FET Package Dimensions • Features Unit: mm • Low ON resistance Rds on : Rds (on) 1 = 0 .3 1 5 0 (typ.) • High switching rate : tf= 3 8 n s (typ.) • No secondary breakdown • Low voltage drive is possible

2SK1263

Abstract: SC-65 2SK126
Contextual Info: Power F-MOS FET 2SK1263 2SK1263 Silicon N-channel Power F-MOS FET Package Dimensions •Features • • • • Low ON resistance R d s on : R Ds (on) 1 = 0.04ft (typ.) High switching rate : t(= 195ns (typ.) No secondary breakdown High breakdown voltage

2SK1264

Abstract: 2SK12 H150
Contextual Info: P o w e r F-MOS FET 2SK12Ó4 2SK1264 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds on : R DS (on) l = 0 . 7 i i (ty p .) Unit: mm • High sw itch in g ra te : tf = 3 6 n s (ty p .) • No seco n d a ry breakdow n

MA164

Abstract: MA153 2SK1267 SC-59A
Contextual Info: 2SK1267 Switching Diodes MA164 Silicon epitaxial planer type 2.8 –0.3 +0.25 1.45 +0.1 2 MA153 type with reverse wiring series connection +0.1 0.16 –0.06 0.8 1.1 –0.1 +0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: 2SK1267 Switching Diodes MA164 Silicon epitaxial planer type 2.8 –0.3 +0.25 M Di ain sc te on na tin nc ue e/ d 2 +0.1 0.16 –0.06 0.8 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo

MA162

Abstract: F056 MA-150 MA150
Contextual Info: 2SK1267 Switching Diodes MA150, MA161, MA162, MA162A Silicon epitaxial planer type For switching circuits 1 • Features ● Small capacity between pins, Ct ■ Absolute Maximum Ratings Ta= 25˚C Symbol Rating MA150 Repetitive peak reverse voltage MA161

Contextual Info: 2SK1262 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)

2SK1263

Abstract: 2SK12 SC-65
Contextual Info: Power F-MOS FET 2SK12Ó3 2SK1263 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON re s is ta n c e R ds on : R DS (on) l = 0 .0 4 f t (ty p .) Unit: mm • H igh sw itch in g r a t e : t i = 195ns (ty p .) 15,5max. • N o se c o n d a ry b re a k d o w n

2SK1267

Abstract: SC-65 D 1169 25
Contextual Info: P ow er F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resista n ce R » o n : R t>; (on) 1 - 0 .0 7 il (typ.) Unt: mm • High sw itching ra te : ti = 180n s (ty p .) • No secondary breakdown • High breakdown voltage

2SK1261

Contextual Info: 2SK1261 P o w e r F-MOS FET 2SK1261 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • Low ON resistance R Ds on : RDS (on) 1 = 0 .16fl (typ.) • High switching rate : tf=56ns (typ.) • No secondary breakdown Unit: m m • Low voltage drive is possible (VGs = 4V).

2SK1266

Contextual Info: 2SK1266 Switching Diodes MA160A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features Short reverse recovery period trr ● Small capacity between pins, Ct

Contextual Info: 2SK1267 Switching Diodes MA200A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 of a soft recovery type 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 ● trr reverse current IR, with extremely small leakage current

2SK126

Abstract: 2SK1266
Contextual Info: Pow er F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Features • • • • ■ Package Dimensions Low ON resistance RDs on : R DS (on) 1 = 0 .080 (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving ( V g s = 4V)

2SK1260

Abstract: JI35
Contextual Info: P o w er F-MOS FET 2SK1260 2S K 1260 Silicon N-channel Power F-M O S FET • Package Dimensions ■ Features • Low ON resistan ce R ds on : R ds (on) l = 0 .3 1 5 ii (typ.) Unit: mm • High switching rate : t f= 3 8 n s (typ.) • No secondary breakdown

Contextual Info: 2SK1267 Power F-MOS FETs 2SK1267 Silicon N-Channel Power F-MOS Unit : mm • Features ON-resistance RDS on : R DS(on)1= 0.07Ω(typ) ■ Applications ● DC-DC converter ● Non-contact ● Solenoid ● Motor 4.0±0.1 4.0±0.1 drive 20.0±0.3 ● Low-voltage

2SK1266

Contextual Info: 2SK1266 Power F-MOS FETs 2SK1266 Silicon N-Channel Power F-MOS Unit : mm ON-resistance RDS on : R DS(on)1= 0.08Ω(typ) 2.7±0.2 switching : tf=180ns(typ) secondary breakdown ● Low-voltage 16.7±0.3 ● No 5.5±0.2 drive 4.2±0.2 ● High-speed 4.2±0.2

Contextual Info: blE D 44^205 Ü013S77 Sbb • H I T 4 2SK1268,2SK1269 S IL IC O N N -C H A N N EL M O S F E T HIGH SPEED POWER SWITCHING ■ FEATURES • Low O n-R esistance • High S p e e d Sw itching • • • Low Drive C urrent No S eco n d ary Breakdow n Suitable for Sw itching Regulator, DC-DC C onverter

2SK1266

Contextual Info: P o w e r F -M O S F E T 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance Ri„ on : K|,.» (on) 1 = 0 . 0 8 0 (typ.) Unit mm • High switching rate : t , - 180ns (typ.) • No secondary breakdown • For low voltage driving ( V « = 4V)