2SK1017 Search Results

A2103

Contextual Info: 2SK1017-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee

2SK1017

Contextual Info: 2SK1017 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3P Applications Switching regulators UPS DC-DC converters

Contextual Info: 2SK1017-01 N-channel MOS-FET F-II Series 450V > Features - 0,35Ω 20A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK1017

Abstract: SC-65
Contextual Info: 2SK1017 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3P Applications Switching regulators UPS DC-DC converters

diode Sr

Abstract: 2SK1017-01 1D-10A
Contextual Info: FUJI 2SK1017-01 F-ll Series eujMsirLtìUE N-channel MOS-FET 450V 0,35Q 20A 150W > Features > Outline Drawing - H ig h S p e e d Sw itching - L o w O n -R e s is ta n c e - N o S e c o n d a ry B rea k d o w n - L o w D riving P o w e r - H ig h V o lta g e

Contextual Info: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01

Contextual Info: 2SK1017-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES lOutline Drawings • Features • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee

Contextual Info: 2SK1017-01 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)55 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)

2SK1101-01M

Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01

A2103

Abstract: 2SK1017-01 H115 SC-65 T151 A2 104 a2105 ULS-11
Contextual Info: 2SK1017-01 FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F-II S E R I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V Gss — ± 3 0 V Guarantee

2SK1014-01

Abstract: 2SK151
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01

Contextual Info: 2SK1017 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)55 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)

2sk1507

Abstract: 2SK956 2SK1011 2SK1011-01 2SK1012 2SK1016 2SK1082 2SK1217 2SK1916 2SK962
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01

A2103

Abstract: 2SK 1110 2SK1017-01 SC-65 T151 A2 104 DIODE 3d
Contextual Info: 2SK1017-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings ¡Features 'High speed switching •Low on-resistance •No secondary breakdown 'Low driving power ' High voltage >VGSS —±30V Guarantee »Avalanche-proof

2SK1011

Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01

2SK1171

Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn

2sk1507

Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01

IRF 548

Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39

2sk1005

Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Contextual Info: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn