2SK 540 Search Results

BUZ90af

Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Contextual Info: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198

transistor 2sk

Abstract: transistor+2sk
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2313 DATA SILICON N CHANNEL MOS TYPE L2-tt-M O SV (2SK 2313) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

2sk2365

Abstract: MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 2SK3058-ZJ PHB24N03LT 2SJ328
Contextual Info: N & P CHANNEL HIGH POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 3A TO 60A, AND POWER RATING UP TO 75W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 900V UP TO 100V N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BUK464-200A BUK465-200A BUK466-200A

smd transistor 2f

Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Contextual Info: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.

2SB 545

Abstract: 030VC60 smd tra 14 SMD T26 1AMM ST0220 Am 170 415
Contextual Info: Basic Ordering and Packing Form Explanation o f P acking L is ts 1. Type No. Example 1 D1ND ^- R everse voltage X 1/10. Example 2 2SK 2663 E IA J No. E IA J C lassification. 2SA , 2SB , 2S C , 2SD T ra n s is to r 2 S J : M osfet Reel width 2. Code No.

TRANSISTOR BH RW

Abstract: k1272 fbii 2SK1272 s45l
Contextual Info: • 5 /— h Field E ffe ct P o w e r T ra n sisto r 2SK 1272 ✓<l7 — M O S N 1 - ^ ^ V mJ m O S 2SK1272ÌÌ, FETT", 5 V « ì H S J C Æ tS i^ tlj^ 'n T H b Î c x 7 f > 7 • * < , -? , « Œ y i / Z j F, 4 IE » ? FET ¿> « H I W iim m ) X T 't .

Contextual Info: # a 2j J f c ' ' r 7 — M O S F E T M O S Field E ffect P o w e r Transistors 2S K19 5 4 ,2SK 19 54-Z N f ^ ; k N 0 ,7 - M O S F E T jim m 2SK1954 l ì N f- ^ * s u m ? '* '7 - MOS F E T T * is 0 Si JW]' X -i -y f- > DC-D C a V ^ - i ' C i l T ' t o # m

TC-7606

Abstract: 2SK1283
Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to

2sk1150

Abstract: b 772 my1 PS7K 2SK 1411 t8506
Contextual Info: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .

2SK994

Abstract: Transistor SJE 211 2SK99 0236 324-II 2SK9
Contextual Info: M O S Field E ffe ct P o w e r T ra n s is to r N MOS FET I t i 2SK 994 ¡ì, N ^ ^ Ü P ' ^ - M O S FET T , 5 V }g * IC m m m f. : mm 10.5 MAX. * V ff iÜ L ^ fé ; < , y w / ' i ^ K, 7 X>f • y f- v r E M 4.7 MAX. È ÌiflÉ ÌlT V 'S fc y ), v - Z ^ iiìiJ f P ic J lilT - f

Mosfet T460

Abstract: T460 mosfet LI 803-2 NEC IEI-620 2SK2413 b4sb C947
Contextual Info: _L * IK I • M O S B Â l^ e jÆ M O S N E C ^ M O S F ie ld E f fe c t T r a n s is t o r 2 N 51* FET S K 2 4 1 3 ^ ;U /N ° 7 - M O S F E T ^ 'y Æ l i f f l m m miiL : mm; 2SK 2413(âN ^ + ^ ;U iÉ M /\°7 -M O S F E T T ', fêfêjFflft T * U, ^-fST7

2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Contextual Info: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13

2SK2136

Contextual Info: MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 6 , 2 S K 2 1 3 6 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2136, 2SK2136-Z are N -channel Power MOS Field Effect Transistors designed fo r h ig h vo lta g e sw itch in g applications.

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

2SK1852

Abstract: 015fi MADT mpnp
Contextual Info: -y 5 7 . C / |~ ~ NEC ^ ï / \ t mos mos M O S Field Effect Power Transistor 7 î fet 2SK1852 N MOS F E T n m m 2SK1852 a , T, FET 5V N > mn& ic CD&tilz x h M y '?T7 — M O S • m m £ X >f .y f - > 7T'<4 X T " f o f é * V ÎS ÎÆ T ', X >f -y f - > i) i i l t ^ £ £ ¿ 0 ,

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

K68A

Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Contextual Info: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E

Contextual Info: 2SK1307 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2sk1623

Contextual Info: 2SK1623 L , 2SK1623(S) Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • L ow on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

transistor DK qj

Abstract: 2SK1587 JE 04 DIODE Z5
Contextual Info: 52— & N E • $ /— h MOS M O S Field E ffe ct T ran sis to r C 2 MOS 2SK1587 i , ^ 'y f 'jïŒ S 1 K 5 8 7 FET n m m ( ^ - f i : mm i§ g g j^ -7 V )N MOS F E T f t o ^ MO S F E T l i t > m a w i& < , T ^ S f c à ò , V l / - , i) « a 1. 5 ± 0.1

2267d

Abstract: transistor 2sk
Contextual Info: TOSHIBA 2SK2267 Field Effect Transistor U n it in m m Silicon N Channel MOS Type L2-7t-MOS V 20SMAX. High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive g • Low Drain-Source ON Resistance

nec DI 392

Abstract: 2SK2135 MEI-1202 TEA-1035
Contextual Info: ÆKB3SM. DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK2135 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2135 is N-channel Pow er M OS Field Effect T ran ­ in millim eters sistor designed fo r high voltage switching applications.

2SK156

Abstract: VLN 2003a HT 12E APPLICATION sj 2025 sj 2038 TRANSISTOR BC 313
Contextual Info: SANYO Xtm CONPULTOR COKF 2SK156 r - ' x i - x z ' N-Channel Junction Silicon Field-Effect Transistor 2037 Capacitor Microphone Impedance Conversion Applications 540F A B S O L U T E M AXIMUM RA TIN G S/Ta = 2 5°C unit Gate drain voltage vdgo Gate current