2SJ57 Search Results

2SJ575

Abstract: Hitachi 2SJ DSA003643
Contextual Info: 2SJ575 Silicon P Channel MOS FET High Speed Switching ADE-208-740B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (MPAK)

Hitachi 2SJ

Abstract: Hitachi DSA002752 2SJ574
Contextual Info: 2SJ574 Silicon P Channel MOS FET High Speed Switching ADE-208-739B Z 3rd.Edition. June 1999 Features • • • Low on-resistance RDS = 1.1 Ω typ. (VGS = -10 V , ID = -150 mA) RDS = 2.2 Ω typ. (VGS = -4 V , ID = -150 mA) 4 V gate drive device. Small package (MPAK)

Contextual Info: Preliminary Datasheet 2SJ574 R07DS0574EJ0400 Previous: ADE-208-739B Rev.4.00 Nov 14, 2011 Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)

63841

Abstract: 6384-2 2SJ579
Contextual Info: Ordering number:ENN6384 P-Channel Silicon MOSFET 2SJ579 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SJ579] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2 1

M7522

Abstract: 64082 2SJ578
Contextual Info: 注文コード No. N 6 4 0 8 2SJ578 No. N 6 4 0 8 N1299 新 2SJ578 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

2SJ579

Contextual Info: Ordering number:ENN6384 P-Channel Silicon MOSFET 2SJ579 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SJ579] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2 1

2SJ575

Abstract: 2SJ576 Hitachi 2SJ Hitachi DSA00397
Contextual Info: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK)

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

2SJ571

Abstract: TA2761
Contextual Info: 2SJ571 Ordering number : EN8580 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ571 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C

2SJ579

Contextual Info: 注文コード No. N 6 3 8 4 2SJ579 No. N 6 3 8 4 O0599 新 2SJ579 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

2SJ574

Abstract: Hitachi 2SJ Hitachi DSA00398 TR201
Contextual Info: 2SJ574 Silicon P Channel MOS FET High Speed Switching ADE-208-739B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA) • 4 V gate drive device. • Small package (MPAK)

2SJ578

Contextual Info: Ordering number:ENN6408 P-Channel Silicon MOSFET 2SJ578 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SJ578] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2 1

ta2761

Contextual Info: 2SJ571 Ordering number : EN8580 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ571 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C

2SJ574B

Contextual Info: Preliminary Datasheet 2SJ574 R07DS0574EJ0400 Previous: ADE-208-739B Rev.4.00 Nov 14, 2011 Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)

Contextual Info: Preliminary Datasheet 2SJ574 Silicon P Channel MOS FET High Speed Switching R07DS0574EJ0500 Rev.5.00 Jan 10, 2014 Features • Low on-resistance RDS = 1.1 Ω typ. VGS = –10 V, ID = –150 mA RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA) • 4 V gate drive device.

2SJ574

Abstract: Hitachi 2SJ DSA003643
Contextual Info: 2SJ574 Silicon P Channel MOS FET High Speed Switching ADE-208-739B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS = 1.1 typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 typ. (VGS = -4 V , I D = -150 mA) • 4 V gate drive device. • Small package (MPAK)

2SJ575

Abstract: 2SJ576 marking code diode CMPAK Hitachi 2SJ DSA003643
Contextual Info: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK)

ta2761

Abstract: TA 2761 2SJ571
Contextual Info: 2SJ571 注文コード No. N 8 5 8 0 三洋半導体データシート N 2SJ571 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・10V 駆動。

2SJ578

Contextual Info: Ordering number:ENN6408 P-Channel Silicon MOSFET 2SJ578 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SJ578] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2 1

Hitachi 2SJ

Abstract: Hitachi DSA002752 2SJ575
Contextual Info: 2SJ575 Silicon P Channel MOS FET High Speed Switching ADE-208-740B Z 3rd.Edition. June 1999 Features • • • Low on-resistance RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA) 4 V gate drive device. Small package (MPAK)

N641

Abstract: 2SJ577 ITR00394 ITR00395 ITR00396 ITR00397 ITR00398 TA-2445 tf 115 250v 15a
Contextual Info: 注文コード No. N 6 4 1 1 2SJ577 No. N6411 N1299 新 2SJ577 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

pw 005

Abstract: Hitachi 2SJ 2SJ575 Hitachi DSA00336
Contextual Info: 2SJ575 Silicon P Channel MOS FET High Speed Switching ADE-208-740B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (MPAK)

2SJ577

Abstract: ITR00394 ITR00395 ITR00396 ITR00397 ITR00398
Contextual Info: Ordering number:ENN6411A P-Channel Silicon MOSFET 2SJ577 Ultrahigh-Speed Switching Applications Features Package Dimensions unit:mm 2093A [2SJ577] 4.5 10.2 1.3 1.6 8.8 11.5 0.9 • Low ON-resistance. · Ultrahigh-speed switching. · Low-voltage drive. 11.0

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,