2SD2621 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency driver amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621G Silicon NPN epitaxial planar type For low-frequency driver amplification • Features ■ Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

ed 3b general semiconductor

Abstract: 2SD2621 AN10800
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 • Features ■ Absolute Maximum Ratings Ta = 25°C

2SD2621

Abstract: 2sd26
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 • Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 1 0.23+0.05 –0.02 0.80±0.05 1.20±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 0.80±0.05 1.20±0.05 • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 0.80±0.05 1.20±0.05 • High forward current transfer ratio hFE

2SD2621

Contextual Info: Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 0.80±0.05 1.20±0.05 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

transistor 2sc5609

Abstract: 2sc5609 MAS3781E 2sc5609 transistor 2SD2621
Contextual Info: New Subminiature Surface-Mount Package SSS Mini 3-Pin Package Series n Overview The Subminiature Surface-Mount Package Series with 1.2 mm x 0.8 mm x 0.52 mm in external size will contribute to the production of downsized, lightweight, and low-profile devices. In addition, the flat-lead structure of the

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the