2SD226 Search Results

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •F e a tu re s 1 ) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW V cE(sat). VcE(sat) = 0.2V (Typ.) (Ic / I 2) b = 2 A /0 .1 A ) E x c e lle n t c u rre n t g a in c h a ra c te ris ­

2SD2232

Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
Contextual Info: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281

Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

Contextual Info: HITACHI 2SD2263-Silicon NPN Epitaxial Low Frequency Power Amplifier Features TO-92 1 • Build in zener diode for surge absorb. • Suitable for relay drive with small power loss. Table 1 Absolute M aximum Ratings (Ta = 25°C) Item Symbol Rating

Hitachi DSA002756

Contextual Info: 2SD2263 Silicon NPN Epitaxial Application Low frequency power amplifier Features • Build in zener diode for surge absorb. • Suitable for relay drive with small power loss. Outline 2SD2263 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

Contextual Info: Power Transistors 2SD2266 Silicon NPN triple diffusion planar type Unit: mm 2.5±0.1 M Di ain sc te on na tin nc ue e/ d • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Allowing supply with the radial taping 5.0±0.1

Contextual Info: Transistor 2SD2260 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit: mm 0.15 0.65 max. 14.5±0.5 ● High collector breakdown voltage. Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SD2261

Abstract: 2038
Contextual Info: Ordering number:ENN5311A NPN Epitaxial Planar Silicon Transistor 2SD2261 ISA/lm i Driver Applications Applications Package Dimensions • M otor drivers, printer ham m er drivers, relay drivers unit:mm 2038A Features [2SD2261] • D arlington connection .

2SD2264

Contextual Info: 2SD2264 Transistors Low Frequency Transistor 20V, 3A 2SD2264 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 2SD2264 2.5±0.2 0.65Max. zStructure Epitaxial planar type

2SD2266

Contextual Info: Power Transistors 2SD2266 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.1 • Features ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO

Contextual Info: Transistor 2SD2260 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit: mm 6.9±0.1 0.65 max. 14.5±0.5 ● High collector breakdown voltage. Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SD2263

Abstract: Hitachi DSA00398
Contextual Info: 2SD2263 Silicon NPN Epitaxial Application Low frequency power amplifier Features • Build in zener diode for surge absorb. • Suitable for relay drive with small power loss. Outline TO-92 1 2 ID 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD2263 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sai) = 0 . 2 V ( T y p .) ( I c / I b = 2A/Û.1A) 2) Excellent current gain characteris­ tics. 3) Complements the 2SB1424/2SA1585S.

245 transistor

Abstract: ic 245 2SD2150 transistor Ic 1A datasheet NPN 2SA1585S 20V3A 2SC4115 equivalent transistor an 243 npn 2a NPN Silicon Epitaxial Planar Transistor
Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

Contextual Info: 2SD2263 Silicon NPN Epitaxial HITACHI Application Low frequency pow er am plifier Features • Build in zener diode for surge absorb. • Suitable for relay drive w ith sm all pow er loss. Outline TO-92 1 2 O 3 O' 1. Emitter 2. Collector 3. Base ò 1001

2SD2263

Abstract: DSA003638
Contextual Info: 2SD2263 Silicon NPN Epitaxial ADE-208-1167 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Features • Build in zener diode for surge absorb. • Suitable for relay drive with small power loss. Outline TO-92 (1) 2 ID 3 1. Emitter 2. Collector

2SD2261

Abstract: X-7044
Contextual Info: Ordering number:ENN5311A NPN Epitaxial Planar Silicon Transistor 2SD2261 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers. unit:mm 2038A Features [2SD2261] · Darlington connection. · High DC current gain.

2SD2263

Contextual Info: 2SD2263 Silicon NPN Epitaxial Low Frequency Power Amplifier Features TO-92 1 • Build in zener diode for surge absorb. • Suitable for relay drive with small power loss. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————–

EN5311

Abstract: 2SD2261 7007B-004 2SD226 marking DR
Contextual Info: 2SD2261 Ordering number : EN5311B SANYO Semiconductors DATA SHEET 2SD2261 NPN Epitaxial Planar Silicon Transistor Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers. Features • • • • Darlington connection. High DC current gain.

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

2SB909M

Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Contextual Info: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver