2SD212 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD2127 SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS. 10*0.3 03.2±O.2 . High DC Current Gain : hi?E=500~1500 Ic= 0-5A . Low Collector Saturation Voltage : V C E (Sat)=0-3V(Max.)

2SD2125

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2125 HORIAONTAL OUTPUT APPLICATIONS FOR COLOR TV & Unit in mm MEDIUM RESOLUTION DISPLAY. 1 5 .5 ± 0 .5 . High Voltage gf 3 .6 ± 0 .3 3 .0 ± 0 .3 :V CBO=1500V . Low Saturation Voltage :VcE sat =5V(Max.) (Ic=5A,I b =1A)

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2125 H O R I A O N T A L O U T P U T A P P L I C A T I O N S F O R C O L O R TV & U n it in 3.0±0.3 1 5.5±0.5 gf3.6±0.3 M E D I U M R E S O L U T I O N DISPLAY. . High Voltage :V c b o = L500V . Low SaturationVoltage

Contextual Info: Transistors IC SMD Type Product specification 2SD2122S TO-252 Features +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15

2SD2120

Contextual Info: Ordering number:EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features Package Dimensions • Darlington connection Contains bias resistance, damper diode . · High DC current gain. · Less dependence of DC current gain on temperature.

2SD2125

Contextual Info: SavantIC Semiconductor Product Specification 2SD2125 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal output applications for color TV

2SB1409

Abstract: 2SD2122 2SD2123 DSA003645
Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial ADE-208-926 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector

Contextual Info: 2SD2128 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2 O 1 1. Base 2. Collector 3. Emitter O - L^wv- -W v 6.8 kß 400 Q. Typ (Typ) 2SD2128 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Collector to base voltage

Hitachi DSA001650

Contextual Info: 2SB1409 L /(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA001650

Contextual Info: 2SD2128 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 6.8 kΩ Typ 400 Ω (Typ) 3 2SD2128 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: 2SD2124 L /(S) Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline DPAK 2SD2124(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120

Contextual Info: 2SD2127 TO SH IBA 2 S D 2 1 27 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE LAMP, SOLENOID DRIVE APPLICATIONS. • • • Unit in mm High DC Current Gain : hjrE = 500~ 1500 Low Collector Saturation Voltage : v CE sat = °-3V (Max.)

2SB1407

Abstract: 2SD2121
Contextual Info: 2SB1407 L / S Silicon PNP Epitaxial Low Frequency Power Amplifier Complementary Pair with 2SD2121 L / S Absolute Maximum Ratings Ta = 25°C Item DPAK Symbol Rating Unit ————————————————————– Collector to base voltage

Contextual Info: HITACHI 2SD2124 L / S Silicon NPN Epitaxial Low Frequency Power Amplifier Absolute M aximum Ratings Ta = 2 5 °C Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage Vceo 120 V Emitter to base voltage ^£80 ? V Collector current

Contextual Info: HITACHI 2SD2121 D/d -Silicon NPN Epitaxial Low Frequency Power Amplifier Complementary Pair with 2SB1407 /(§) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 35 V Collector to em itter voltage VCE0 35

2SB1409

Abstract: 2SD2122 2SD2123 Hitachi DSA00382
Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

2SD2129

Abstract: D2129
Contextual Info: 2SD2129 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm

2SB1407

Abstract: 2SD2121 Hitachi DSA00382
Contextual Info: 2SB1407 L /(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

2SB1407

Abstract: 2SD2121
Contextual Info: 2SD2121 L / S Silicon NPN Epitaxial Low Frequency Power Amplifier Complementary Pair with 2SB1407 L / S Absolute Maximum Ratings Ta = 25°C Item DPAK Symbol Rating Unit ————————————————————– Collector to base voltage

D2129

Abstract: 2SD2129
Contextual Info: 2SD2129 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm

2SD2122S

Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SD2122S TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15

2SB1407

Abstract: Hitachi DSA002787
Contextual Info: 2SB1407 L /(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA00279

Contextual Info: 2SD2124 L /(S) Silicon NPN Epitaxial Application Low frequency power amplifier Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector ID 6 kΩ (Typ) 0.5 kΩ (Typ) 3 2SD2124(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

2SD2124

Contextual Info: HITACHI 2SD2124 D/d S ilicon NPN Epitaxial Low Frequency Pow er A m p lifie r Absolute M axim um Ratings (Ta = 25°C Item Symbol Rating Unît Collector to base voltage VcBO 120 V Collector to emitter voltage VCEQ 120 V Emitter to base voltage VEBO 7 V 1.5