2SD2012 Equivalents and Alternates

2SD2012 FFF Equivalents (1)

The Form Fit Function (FFF) results will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts.

Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description
KSD880OJ69Z	Fairchild Semiconductor Corporation	Check for Price	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

2SD2012 Functional Equivalents (5)

The Functional Equivalents tab will give you options that are likely to match the same function of 2SD2012, but it may not fit your design.

Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description
KSD880J69Z	Fairchild Semiconductor Corporation	Check for Price	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
2SD1499	Panasonic Electronic Components	Check for Price	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
KSD880	Fairchild Semiconductor Corporation	Check for Price	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TIP31A	Motorola Semiconductor Products	Check for Price	Power Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
D44C8	National Semiconductor Corporation	Check for Price	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

2SD2012 Datasheets (17)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SD2012	STMicroelectronics	TRANS GP BJT NPN 60V 3A 3TO-220F	Original	PDF	126.19KB	5
2SD2012	Toshiba	Audio Frequency Power Amplifier	Original	PDF	351.44KB	2
2SD2012	Toshiba	Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Transistor for AC-DC converter; Application Scope: switching regulator; Part Number: 2SB1375	Original	PDF	125KB	5
2SD2012	Various Russian Datasheets	Transistor	Original	PDF	84.39KB	8
2SD2012	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82KB	1
2SD2012	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	35.69KB	1
2SD2012	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	43.26KB	1
2SD2012	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	44.6KB	1
2SD2012	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	94.76KB	2
2SD2012	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	44.8KB	1
2SD2012	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.5KB	1
2SD2012	Toshiba	Silicon NPN transistor for audio frequency power amplifier applications	Scan	PDF	167.06KB	3
2SD2012	Toshiba	TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE	Scan	PDF	187.54KB	4
2SD2012	Toshiba	NPN Transistor	Scan	PDF	187.54KB	4

2SD2012-BP	Micro Commercial Components	TRANSISTOR TO-92 MOD	Original	PDF	449.95KB
2SD2012(F,M)	Toshiba	2SD2012 - TRANSISTOR NPN 60V 3A TO-220	Original	PDF	124.99KB	5
2SD2012	JCET Group	NPN transistor in TO-220F package, designed for audio frequency power amplification, with 60 V collector-emitter voltage, 3 A continuous collector current, high DC current gain, low saturation voltage, and 2 W power dissipation.	Original	PDF

2SD2012 Price and Stock

Filter by Manufacturer

Select Manufacturer


STMicroelectronics 2SD2012 TRANS NPN 60V 3A TO-220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2012	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	2SD2012	Tube			2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SD2012		14			1 $2.05 10 $1.64 100 $1.23 1000 $1.23 10000 $1.23	Buy Now
Micro Commercial Components 2SD2012-BP TRANS NPN 60V 3A TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2012-BP	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SD2012 TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components ()	2SD2012		628			1 $3.01 10 $3.01 100 $3.01 1000 $1.24 10000 $1.24	Buy Now
	2SD2012		99			1 $0.45 10 $0.45 100 $0.30 1000 $0.30 10000 $0.30	Buy Now

2SD2012 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SD2012 TO SHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P q = 25W (Tc = 25°C)	OCR Scan	2SD2012	PDF
Contextual Info: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in . High DC Current Gain : 100 Min. 1Q3IIAX . Low Saturation Voltage 0 3 .2 ± Q 2 /- W' : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)	OCR Scan	2SD2012 O-220	PDF
transistor 2sd2012 Abstract: 2sd2012 Contextual Info: 2SD2012 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE 1 - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C)	OCR Scan	2SD2012 transistor 2sd2012 2sd2012	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	2SD2012	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	2SD2012	PDF
2SD2012 Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC)	Original	2SD2012 O-220F 2SD2012	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	2SD2012	PDF
Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# Micro Commercial Components 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	2SD2012	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2012 TO-220F TRANSISTOR NPN 1. BASE FEATURES z Audio Frequency Power Amplifier Applications z High DC Current Gain z Low Saturation Voltage z High Power Dissipation	Original	O-220F 2SD2012 O-220F	PDF
Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2SD2012	PDF
2sd2012 Contextual Info: 2SD2012 NPN SILICON POWER TRANSISTOR • ■ ■ HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS ■ GENERAL PURPOSE SWITCHING ■ DESCRIPTION The 2SD2012 is a silicon NPN power transistor	Original	2SD2012 2SD2012 O-220F O-220F	PDF
transistor d2012 Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012 Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2SD2012 transistor d2012 d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012	PDF
transistor d2012 Abstract: d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	2SD2012 transistor d2012 d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba	PDF
Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components 2SD2012 Features • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	2SD2012 O-220F	PDF

Contextual Info: 2SD2012 T O SH IB A 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 ± 0 .3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P(] = 25W (Tc = 25°C)	OCR Scan	2SD2012	PDF
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm . High DC Current Gain : 100 Min. ia3MAX, 0 zz ± a z . Low Saturation Voltage : VCE(sat) = l*OV(Max.)(IC=2A, IB=0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)	OCR Scan	2SD2012 O-220 10E1A	PDF
2sd2012 Abstract: 2SB1366 2SB136 Contextual Info: Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W TC=25℃ APPLICATIONS ·Audio frequency power amplifier and	Original	2SD2012 O-220F 2SB1366 O-220F) 2sd2012 2SB1366 2SB136	PDF
2SB1375 Abstract: 2SD2012 Contextual Info: Inchange Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation:	Original	2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012	PDF
2SB1375 Abstract: 2SD2012 Contextual Info: JMnic Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃)	Original	2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012	PDF
transistor d2012 Abstract: d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012 Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2SD2012 transistor d2012 d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012	PDF
2sd2012 transistor Abstract: 2sd2012 2SB1375 Contextual Info: TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features • High DC Current Gain : 100 Min. • Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) • High Power Dissipation	Original	2SD2012 2SB1375 2sd2012 transistor 2sd2012 2SB1375	PDF
D2012 toshiba Abstract: transistor d2012 d2012 transistor br d2012 transistor 2SD2012 Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2SD2012 2-10R1A D2012 toshiba transistor d2012 d2012 transistor br d2012 transistor 2SD2012	PDF
2SD2Q12 Contextual Info: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2Q12 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , $ 3.2 ± 0.2 2.7 ± 0 2 High DC C urrent Gain : IrpE 1 = 100 (Min.) Low Saturation Voltage V’ nVy.ci T w _( .»_ ai.\	OCR Scan	2SD2012 2SD2Q12 2SD2Q12	PDF
B1375 Abstract: 2SB1375 2SD2012 Contextual Info: 2SB1375 東芝トランジスタシリコンPNP三重拡散形 2SB1375 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −2 A, IB = −0.2 A) • コレクタ損失が大きい。 • 2SD2012 とコンプリメンタリになります。	Original	2SB1375 2SD2012 2-10R1A 20070701-JA B1375 2SB1375 2SD2012	PDF

2SD2012 Search Results

2SD2012 FFF Equivalents (1)

2SD2012 Functional Equivalents (5)

2SD2012 Datasheets (17)

2SD2012 Price and Stock

STMicroelectronics 2SD2012

Micro Commercial Components 2SD2012-BP

Toshiba America Electronic Components 2SD2012

2SD2012 Datasheets Context Search

transistor 2sd2012

2SD2012

2sd2012

transistor d2012

transistor d2012

2sd2012

2SB1375

2SB1375

transistor d2012

2sd2012 transistor

D2012 toshiba

2SD2Q12

B1375