2SD193 Search Results

EN2516

Abstract: 2SB1935 2SB1295 2SB193
Contextual Info: Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF power amplifier, medium-speed switching, smallsized motor drivers. unit:mm 2018A

2SB1296

Abstract: 2SB1936
Contextual Info: Ordering number:EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications Package Dimensions • AF power amplifier, medium-speed switching, smallsized motor drivers. unit:mm 2033 [2SB1296/2SD1936] Features · Large current capacity.

MAR 641 TRANSISTOR

Abstract: 2SD1934
Contextual Info: Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

2SB1297

Abstract: 2SD1937
Contextual Info: Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

2SD1938

Contextual Info: Transistors 2SD1938 F Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low ON resistance Ron • High forward current transfer ratio hFE

Contextual Info: Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 Unit: mm 5.9±0.2 4.9±0.2 ● 0.7±0.1 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in

2SB1297

Abstract: 2SD1937
Contextual Info: Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 ● • Absolute Maximum Ratings 0.7±0.2 0.7±0.1 Ta=25˚C 13.5±0.5 ● Extremely satisfactory linearity of the forward current transfer

2SD1938

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 2 1 (0.65) • Low ON resistance Ron

EN2516

Abstract: 2SB125 2SB1295 3004J 2SB12 2SD1935 D1935 N0251
Contextual Info: O rd e rin g n u m b e r: EN2516 2SB1295/2SD1935 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose _ Amp Applications Applications . AF power amp, medium-speed switching, small-sized motor drivers Features . Large current capacity

2SD1937

Abstract: 2SB1297 The 8002 Amplifier IC IC1001
Contextual Info: Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 Unit: mm 5.0±0.2 4.0±0.2 ● ● High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.

2SB1295-5

Contextual Info: O rd e rin g n u m b e r :E N 2 5 1 6 2SB1295/2SD1935 No.2516 PNP/NPN Epitaxial Planar Silicon Transistors SA%'VO Low-Frequency General-Purpose _ Amp Applications Applications . AF power amp, medium-speed switching, small-sized motor drivers Features

Contextual Info: Transistors 2SD1934 Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7±0.2 0.7±0.1 13.5±0.5 • Low collector-emitter saturation voltage VCE sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low ON resistance Ron

D1936

Abstract: 2SB129 2SB1296 2SD1936
Contextual Info: Ordering number: EN 2 4 6 8 2SB1296/2SD1936 No.2468 PNP/ NPN Epitaxial Planar Silicon Transistors SA WO i AF Amp Applications Applications . AF power amp, medium-speed switching, small-sized motor drivers Features . Large current capacity . Low collector to emitter saturation voltage

2sb1935

Abstract: 2SB1295 2SD1935
Contextual Info: Ordering number:ENN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Æ AF power amplifier, medium-speed switching, smallsized motor drivers. unit:mm 2018B

2SD1934

Contextual Info: Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.0±0.2 4.0±0.2 ● ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

2SD1937

Abstract: 2SB1297
Contextual Info: Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 Unit: mm 5.0±0.2 4.0±0.2 ● ● High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.

2SD1933

Abstract: 2SB1342 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1933 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION

vebo 25

Abstract: 2SD1938 XP1504
Contextual Info: Composite Transistors XP1504 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For amplification of low frequency output 2.1±0.1 0.425 0.65 1 2 5 3 4 +0.05 0.9± 0.1 2SD1938 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02

2SD650

Abstract: 2SC4711 MG30G1BL3 2SD670 hitachi 2SD731 2SD670 2SD837B 2SD678 2sd699 2SD683
Contextual Info: - 22 0 - tt M € Type No. « Manuf. SANYO 2SD 677 K 2 TOSHIBA m NEC HITACHI ll * ± a FUJITSU tö T MATSUSHITA MITSUBISHI □ — A ROHM 2SD2132 2SC2139 2SD 678A fö T 2SC3144 2SD635 2SD560 2SD1275A 2SD1932 2SD 679A tö T 2SD1190 2SD634 2SD560 2SD1276A 2SD1932

2SD1933

Abstract: 2SB1342 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SD1933 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION

2SD1935

Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SD1935 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low collector to emitter saturation voltage. 1 0.55 Large current capacity. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: | Ordering number . EN 2 4 6 8 2SB1296/2SD1936 N o .2 4 6 8 SA iYO PNP/ N P N Epitaxial Planar SiliconTransistors AF Amp Applications Applications . AF power amp, medium-speed switching, small-sized motor drivers Features . Large current capacity . Low collector to emitter saturation voltage

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1933 Features • • With TO-220Fa package Intended for medium power linear and switching applications NPN Silicon Power Transistors Maximum Ratings