2SD1782 Search Results

smd transistor marking AJ

Abstract: transistor smd marking AJ SMD AJ AJ MARKING 2SD1782K aj smd transistor
Contextual Info: Transistors IC SMD Type Power Transistor 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat .VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

2SB1198K

Abstract: 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor
Contextual Info: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1

Contextual Info: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K •External dimensions (Unit:s mm) • F e a tu re s 1) LOW VcE(sat). VcE(sat) = — 0.2V (Typ.) ( I c / I b = -0.5A /-50m A ) 2) High breakdown voltage. B V ceo = — 8 0 V 3) Complements the 2SD1782K.

npn 222

Abstract: high hfe transistor NPN Transistor Characteristics NPN Silicon Epitaxial Planar Transistor transistor equivalent book 2SD1782K hFE is transistor NPN Transistor on 222 transistor Silicon NPN Epitaxial Planar Power Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
Contextual Info: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

2SD1782K ROHM

Contextual Info: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high

Contextual Info: 2SD1782KFRA 2SD1782K Transistors AEC-Q101 Qualified Power Transistor 80V, 0.5A 2SD1782K 2SD1782KFRA zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0~0.1 2.8±0.2 (1) 1.6+0.2 −0.1 zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.)

Contextual Info: Transistors Power Transistor 80V, 0.5A 2SD1782K •F e a tu re s 1) External dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.2V (Typ.) ( I c / I b = 0.5A/50mA) 2) High breakdown voltage. 2.9±0.2 1 1 + 0 -2 y -0.1 o.0 ±o.1 1.9±0.2 B V ceo = 8 0 V N ’»—

Contextual Info: Transistors IC SMD Type Product specification 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat .VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

Contextual Info: Transistor, NPN 2SD1782K Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1782K; AJ-fr, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB =0.5 A/50 mA • high breakdown voltage BV qeo =

2SD1796

Abstract: SC64 2SB1204 2SD1802 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1808A 2SD1774
Contextual Info: - 266 - Ta=25Tî, *EPfíTc=25<C M 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1775 2SD1775A 2SD1776 2SD1776A 2SD1777 2SD1778 2SD1778A 2SD1779 2SD1780 2SD1781K 2SD1782K 2SD1783 2SD1784 ¿ÒUi föO 2SD1787 2SD1796 2SD1797 2SD1799 2SD1800

sot akr

Contextual Info: 2SB1198K SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 2.92 0.35 1.17 Features — — — 2.80 1.60 Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K 0.15 1.90 Dimensions in inches and (millimeters)

2SD1782KI

Contextual Info: h7 > y 2SD1782K $ /Transistors i ti £ * y U -+ M NPN y y n > h 7 > v * 2 Epitaxial Planar NPN Silicon Transistor fêJS JgÆ :fri|liffl/L o w Freq. Power Amp. 2SD1782K 1i^-Jîi^jâO/Dimensions Unit : mm) Vce (sat)=0.2V (Typ.) 1. 9 ± 0 . 2 (lc /lB = 0 .5 A /5 0 m A )

20594

Abstract: transistor bf 198 2SD1782K ROHM BY 198 DATASHEET transistor equivalent book 2SD1782K 2SD1782K TR1082
Contextual Info: SPICE PARAMETER 2SD1782K by ROHM TR Div. * 2SD1782K NPN BJT model * Date: 2006/12/15 .MODEL 2SD1782K NPN + IS=250.00E-15 + BF=260.39 + VAF=100 + IKF=2 + ISE=250.00E-15 + NE=1.4602 + BR=34.771 + VAR=100 + IKR=1.9204 + ISC=32.139E-12 + NC=1.4582 + NK=.95449

Contextual Info: Transistors Power Transistor 80V, 0.5A 2SD1782K • F e a tu re s 1) • E x te rn a l dim ensions (Units: mm) L O W VcE(sat). VcE(sat) = 0.2V (Typ.) 2 .9 ± 0 .2 (Ic/ I b = 0.5A/50m A) 1 .9 ± 0 .2 •1+ 0.2 — 0.1 0 .8 ± 0.1 n 2) High breakdown voltage.

Contextual Info: Transistors AEC-Q101 Qualified Low-frequency Transistor *80V, *0.5A 2SB1198KFRA 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 2SD1782KFRA 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high

bvceo

Abstract: 231 transistor 2SB1198K 2SD1782K
Contextual Info: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type

Contextual Info: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1

transistor equivalent book 2SD1782K

Abstract: 2SB1198K 2SD1782K
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1198K TRANSISTOR PNP FEATURES Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) z High breakdown voltage BVCEO=-80V z Complements the 2SD1782K 1. BASE

Contextual Info: Transistors Power Transistor 80V, 0.5A 2SD1782K •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.2V (Typ.) (I / I = 0.5A/50mA) 2) High breakdown voltage, c 2 .9 ± 0.2 1 1+0.2 1;1—0.1 1.9 ± 0.2 b 0.8 ± 0 1 (DP B V ceo = 8 0 V

SC marking code NPN transistor

Contextual Info: 2SD1782K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1782K; A J *. where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB = 0.5 A/50 mA high breakdown voltage

2sc3943

Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Contextual Info: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —

Contextual Info: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA