2SD175 Search Results

transistors 2sd

Abstract: 2SD1754 2SD1754A
Contextual Info: P ow er Tra n sisto rs 2SD1754, 2SD1754A 2SD1754, 2SD1754A Silicon PNP Triple-Diffused Planar Type High h FE, • P ack age D im ension s P ow er A m plifier U n i t ! mm ■ F e a tu re s • High D C c u rre n t gain h fE • Good lin earity o f DC c u rr e n t gam (h FE)

npn smd 2a

Abstract: 2a smd 2SD1758
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1758 TO-252 Unit: mm Features 6.50 +0.2 5.30-0.2 Low VCE sat , VCE(sat) = 0.5V +0.15 1.50 -0.15 +0.15 -0.15 2.30 +0.1 -0.1 +0.8 0.50-0.7 (IC = 2A, IB = 0.2A). +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max

Contextual Info: Transistors SMD Type Product specification 2SD1758 TO-252 Unit: mm Features 6.50 +0.2 5.30-0.2 Low VCE sat , VCE(sat) = 0.5V +0.15 1.50 -0.15 +0.15 -0.15 2.30 +0.1 -0.1 +0.8 0.50-0.7 (IC = 2A, IB = 0.2A). +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max

Contextual Info: Product specification 2SD1757K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low VCE sat . (Typ.8mV at IC/IB = 10/1mA). 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Optimal for muting. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

2SD1751 datasheet

Abstract: 2SB1170 2SD1751
Contextual Info: Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification Complementary to 2SB1170 3.5±0.2 0.8±0.2 7.2±0.3 3.0±0.2 • Features ■ Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4

Contextual Info: 2SD1756 Silicon NPN Triple Diffused HITACHI Application High voltage high current amplifier Outline TO -220A B 2 1 1. Base 2. C ollector Flange 3. Emitter 1 2 3 1— v T 3 kQ (Typ) - v w - | 1 50 Q (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25°C) = Item Symbol

2SB1170

Abstract: 2SD1751
Contextual Info: Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification Complementary to 2SB1170 3.5±0.2 0.8±0.2 7.2±0.3 3.0±0.2 • Features ■ Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4

Hitachi DSA00164

Contextual Info: 2SD1756 Silicon NPN Triple Diffused Application High voltage high current amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter 3 kΩ (Typ) 150 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SD1758

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors 2SD1758 z TRANSISTOR NPN TO-251 TO-252-2L FEATURES Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A
Contextual Info: Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit: mm 7.0±0.3 0.8±0.2 1.0±0.2 3.5±0.2 2.0±0.2 20 VCEO emitter voltage 2SD1752A 7.0±0.3 3.0±0.2

TO-252-2

Abstract: TO252-2 2SD1758
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1758 TO-252-2 TRANSISTOR PNP 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current 2 A ICM: Collector-base voltage

3ALF

Abstract: 2SD1756
Contextual Info: HITACHI 2SD1756 SILICON NPN TRIPLE DIFFUSED H IG H V O L T A G E H IG H C U R R E N T A M P L I F I E R i u m i f. Rase 2. Collector Flange ?. Emitter (Dimensions in mm) (JEDEC TO-220AB) ¡ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item MAXIMUM COLLECTOR DISSIPATION

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1758 TO-252-2 TRANSISTOR（PNP） 1.BASE FEATURES Power dissipation PCM: 2W （Tamb=25℃） Collector current ICM: 2A Collector-base voltage V BR CBO: 40V Operating and storage junction temperature range

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE

Contextual Info: Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit : mm 12.6±0.3 7.2±0.3 M Di ain sc te on na tin nc ue e/ d 1.1±0.1 2SD1752 VCBO 40 2SD1752A

2SD1862

Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3

Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A Unit: mm 3.0±0.2 2.0±0.2 2SB1148 Collector-base voltage (Emitter open)

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A
Contextual Info: Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A Unit: mm Collector-base voltage Emitter open 1.1±0.1 Rating Unit VCBO −40 V 0.75±0.1 0.4±0.1 1.0±0.2 Symbol 2SB1148

4k resistor

Abstract: 2SB1183 2SB1239 2SD1759 2SD1861 T146
Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

2SD1758

Abstract: 2SB1240 2SB1182 2SB1188 2SD1766 2SD1862 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3

2SD1754

Abstract: 2SD1754A
Contextual Info: Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage Emitter open 2SD1754 Rating Unit VCBO 80 V VCEO Emitter-base voltage (Collector open) 60 1 6 V

2SB1183

Abstract: 2SB1239 2SD1759 2SD1861 T146
Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

TO-252-2

Abstract: 2SD1758 TO252-2
Contextual Info: Transys Electronics L I M I T E D TO-252-2 Plastic-Encapsulated Transistors 2SD1758 TO-252-2 TRANSISTOR PNP 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO: