2SD144 Search Results

2SB948

Abstract: 2SB948A
Contextual Info: JMnic Product Specification 2SB948 2SB948A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1445/1445A ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For low-voltage switching applications

2SD1441

Contextual Info: P o w er T ra n s is to rs 2SD1441 2SD1441 S ilicon NP.N T rip le -D iffu s e d Junction M e s a Type Horizontal ueflection Output • Package Dimensions U nit ! . ■ Features • Damper diode built-in • High breakdown voltage and high reliability by glass passivation

2SB953

Abstract: 2SD1444
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB953 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.6V(Max)@IC= -5A ·High Speed Switching ·Complement to Type 2SD1444 APPLICATIONS ·Designed for low-voltage switching applications.

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

2SB948

Abstract: 2SB948A 2SD1445 2SD1445A
Contextual Info: Power Transistors 2SB948, 2SB948A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1445 and 2SD1445A Unit: mm • Absolute Maximum Ratings Parameter Collector to base voltage 2SB948A Collector to 2SB948 Ratings –40 VCBO –50

953a

Abstract: 2SD1444A 2SD1444
Contextual Info: Inchange Semiconductor Product Specification 2SD1444 2SD1444A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching ・High collector current ・Complement to type 2SB953/953A APPLICATIONS

2SB0953A

Abstract: 2SD1444A
Contextual Info: Power Transistors 2SD1444A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB0953A 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Symbol Rating 7.5±0.2 16.7±0.3 14.0±0.5 • Absolute Maximum Ratings TC = 25°C

2SB0948A

Abstract: 2SD1445A
Contextual Info: Power Transistors 2SD1445A Silicon NPN epitaxial planar type For power amplification, power switching and low-voltage switching Complementary to 2SB0948A 16.7±0.3 14.0±0.5 • Absolute Maximum Ratings TC = 25°C 2.7±0.2 4.2±0.2 • Low collector-emitter saturation voltage VCE sat

Contextual Info: Power Transistors 2SD1440 2SD1440 Silicon NP.N Triple-Diffused Junction Mesa Type P a c k a g e D im e n s io n s H o riz o n tal D e flec tio n O u tp u t Unit ! mm 15 5m ax. • F e a tu re s 13 5nid\ • D am p er diode built-in 1 l.Ornax 4 7max ¿9. J1m a x

2SB953

Abstract: 2SB953A 1444A
Contextual Info: JMnic Product Specification 2SB953 2SB953A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1444/1444A ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For low-voltage switching PINNING

2SB948

Abstract: 2SD1445 2SD1445A
Contextual Info: Inchange Semiconductor Product Specification 2SD1445 2SD1445A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB948/948A ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For power amplification,power switching

2SD1442

Abstract: 2SB925 2SD1442A
Contextual Info: 2 S D 1442, 2SD1442A 2SD1442, 2SD1442A U □ V NPN i is t Jf^ /S i N P N E pitaxial Planar ¿ r i/ y JW ? /P o w e r Amplifiers y > y ^ / L o w Voltage Switching 2SB925£ 3 > z? 1 U/Com plem entary Pair with 2SB925 U n i t ! mm 10.5 + 0.5 4.8max. 1.5max.

Contextual Info: Power Transistors 2SD1445, 2SD1445A Silicon NPN epitaxial planar type For power amplification, power switching and low-voltage switching Complementary to 2SB0948 and 2SB0948A 2.7±0.2 16.7±0.3 φ 3.1±0.1 Collector to base voltage Collector to emitter voltage

2SB0948

Abstract: 2SB0948A 2SD1445 2SD1445A 60-mA
Contextual Info: Power Transistors 2SD1445, 2SD1445A Silicon NPN epitaxial planar type For power amplification, power switching and low-voltage switching Complementary to 2SB0948 and 2SB0948A • Features 5.5±0.2 2.7±0.2 Collector to base voltage 2SD1445 2SD1445A 2SD1445

2SD1441

Contextual Info: SavantIC Semiconductor Product Specification 2SD1441 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

2SD1446

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1446 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·High collector to base voltage VCBO ·DARLINGTON APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION

953a

Abstract: 2SD1444 2SD1444A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1444 2SD1444A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High speed switching ·High collector current ·Complement to type 2SB953/953A APPLICATIONS

BO 817

Abstract: 2SD1446 pc 817 35mA3
Contextual Info: Power Transistors 2SD1446 2S D 1446 Silicon NPN Triple-Diffused Planar Darlington Type Package D im ensions Power A m plifie r U n it ’ m m 4 .4 m ax. • Features • H igh DC c u r re n t gain Iif e • H igh c o lle c to r-b a s e v o ltag e 2.9 mdx

2SB956

Abstract: 2SD1444 2SD1444A 2SD1273A
Contextual Info: 2SD1444, 2SD1444A Power Transistors 2 S D 1 4 4 4 , 2 S D 1 4 4 4 A Silicon NPN Epitaxial Planar Type Package Dim ensions Power A m plifier Low V oltage Sw itching C om plem entary Pair with 2SB956 U n i t ! mm • Features • L o w c o lle c to r-e m itte r sa tu ra tio n v o lta g e V cecsjo

2SD1441

Contextual Info: Product Specification www.jmnic.com 2SD1441 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High voltage ,high reliability ・High speed switching ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications

Contextual Info: Power Transistors 2SD1445, 2SD1445A Silicon NPN epitaxial planar type For power amplification, power switching and low-voltage switching Complementary to 2SB0948 and 2SB0948A Parameter Collector to base voltage Collector to emitter voltage 16.7±0.3 φ 3.1±0.1

Contextual Info: Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington Unit: mm 16.7±0.3 5.5±0.2 2.7±0.2 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current

2SD1445

Contextual Info: Power Transistors 2SD1445, 2SD1445A Silicon NPN epitaxial planar type For power amplification, power switching and low-voltage switching Complementary to 2SB0948 and 2SB0948A Parameter Collector to base voltage Collector to emitter voltage 16.7±0.3 φ 3.1±0.1