2SC599 Search Results

2SC5998

Abstract: 2SC5998YC
Contextual Info: 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0100Z Rev.1.00 Apr.20.2004 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain MAG = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5993 Silicon NPN epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 • Features 13.7±0.2 4.2±0.2 Solder Dip

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5993 Silicon NPN epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 15.0±0.5

2SC5993

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5993 Silicon NPN epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 φ 3.2±0.1 Th an W is k y Th e a pro ou

Contextual Info: 2SC5994 Ordering number : ENN8035 2SC5994 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.

2SC5993

Contextual Info: Power Transistors 2SC5993 Silicon NPN epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 • Features 13.7±0.2 4.2±0.2 Solder Dip • Satisfactory linearity of forward current transfer ratio hFE

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

isahaya

Abstract: 2SC5996A
Contextual Info: 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5996A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Unit : mm OUTLINE DRAWING DESCRIPTION ISAHAYA 2SC5996A is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching.

isahaya

Abstract: 2SC5996B
Contextual Info: 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5996B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Unit : mm OUTLINE DRAWING DESCRIPTION 2.1 ISAHAYA 2SC5996B is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching.

2SC5999

Contextual Info: 2SC5999 Ordering number : ENN8029 2SC5999 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers, inverters. Features • • • • • Adoption of MBIT process. Large current capacitance.

2SC5996

Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5996 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Unit : mm OUTLINE DRAWING DESCRIPTION ISAHAYA 2SC5996 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application

C5935

Abstract: 2SA2140 2SC5993
Contextual Info: Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 „ Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage

Contextual Info: 2SC5990 Ordering number : ENN8118 2SC5990 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. High current capacitance.

2SC5994

Contextual Info: Ordering number : EN8035A 2SC5994 Bipolar Transistor 50V, 2A, Low VCE sat , NPN Single PCP http://onsemi.com Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment • Features Adoption of MBIT process Low collector-to-emitter saturation voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5993 Silicon NPN epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 • Features 13.7±0.2 4.2±0.2 Solder Dip

2SC5994

Contextual Info: 2SC5994 Ordering number : ENN8035 2SC5994 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.

2SC5990

Abstract: N2906 VR10
Contextual Info: 2SC5990 注文コード No. N 8 1 1 8 A 三洋半導体データシート 半導体ニューズ No. N8118 とさしかえてください。 2SC5990 NPN エピタキシァルプレーナ型シリコントランジスタ DC / DC コンバータ用 用途 ・リレードライブ , ランプドライブ , モータドライブ , フラッシュ。

2SC5993

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5993 Silicon NPN epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 15.0±0.5

Contextual Info: 2SC5994 Ordering number : ENN8035 2SC5994 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.

en803

Contextual Info: 2SC5994 Ordering number : EN8035A SANYO Semiconductors DATA SHEET 2SC5994 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment • Features Adoption of MBIT process

2SC5991

Abstract: N2906
Contextual Info: 2SC5991 注文コード No. N 8 0 7 1 三洋半導体データシート N 2SC5991 NPN エピタキシァルプレーナ形シリコントランジスタ DC / DC コンバータ用 用途 ・リレードライブ , ランプドライブ , モータドライブ , フラッシュ。

2SC5991

Contextual Info: 2SC5991 Ordering number : ENN8071 2SC5991 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET, MBIT process. High current capacitance.

TL 2262

Abstract: SC 2262 2SC5998 SC-59A
Contextual Info: 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain MAG = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the