2SC5519 Search Results

2SC5519

Abstract: diode 6A 1000v
Contextual Info: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V Emitter to base voltage VEBO 5

2SC5519

Contextual Info: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES

Contextual Info: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature

2SC5519

Contextual Info: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature Storage temperature

2SC5519

Contextual Info: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC5553 transistor

Abstract: transistor 3E TO36 2sc5522 M.P Diode
Contextual Info: Horizontal Deflection Transistor Series for TV • Overview B ased on accum ulated m anufacturing technology, these horizontal deflection transistors for TVs offer high perform ance and com pact design. T hey can also w ithstand high voltage and m aintain low loss. T hey also have a broad area o f safeoperation, despite an absolutely m inim al chip area which allow s very com pact package configuration. These advanced

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5521

Abstract: 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546
Contextual Info: New Horizontal Deflection Transistor Series for TV • Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced