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    2SC551 Search Results

    2SC551 Datasheets (44)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC551
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 63.17KB 1
    2SC551
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 87.11KB 1
    2SC551
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 45.78KB 1
    2SC551
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 160.77KB 1
    2SC551
    Unknown Japanese Transistor Cross References (2S) Scan PDF 36.18KB 1
    2SC551
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.69KB 1
    2SC551
    Unknown Transistor Substitution Data Book 1993 Scan PDF 34.52KB 1
    2SC551
    Unknown The Japanese Transistor Manual 1981 Scan PDF 115.82KB 2
    2SC551
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.12KB 1
    2SC551
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 124.63KB 1
    2SC551
    Toshiba Silicon NPN Epitaxial Planar Transistor Scan PDF 45.5KB 2
    2SC551
    Toshiba Japanese Transistor Data Book Scan PDF 45.69KB 2
    2SC5510
    Unknown Japanese Transistor Cross References (2S) Scan PDF 32KB 1
    2SC5511
    ROHM High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) Original PDF 50.87KB 1
    2SC5511
    ROHM For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) Original PDF 46.54KB 2
    2SC5511
    Unknown Japanese Transistor Cross References (2S) Scan PDF 32KB 1
    2SC5511
    ROHM High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) Scan PDF 42.94KB 1
    2SC5512
    Unknown Japanese Transistor Cross References (2S) Scan PDF 32KB 1
    2SC5513
    Panasonic Silicon NPN triple diffusion mesa type Original PDF 55.13KB 3
    2SC5513
    Panasonic NPN Transistor Original PDF 55.87KB 3
    SF Impression Pixel

    2SC551 Price and Stock

    Panasonic Electronic Components

    Panasonic Electronic Components 2SC5516

    TRANSISTOR,BJT,NPN,600V V(BR)CEO,20A I(C),TO-247VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC5516 19
    • 1 $11.25
    • 10 $5.63
    • 100 $5.63
    • 1000 $5.63
    • 10000 $5.63
    Buy Now

    2SC551 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original
    2SC5514 PDF

    Contextual Info: Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type Unit: mm φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original
    2SC5513 PDF

    2sC5517

    Contextual Info: Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES


    Original
    2SC5517 2sC5517 PDF

    2SC5514

    Contextual Info: Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature Storage temperature


    Original
    2SC5514 2SC5514 PDF

    2SC5511

    Abstract: 160V Audio Output Transistor Amplifier 2SA2005
    Contextual Info: 2SC5511 Transistors High-voltage Switching Audio output amplifier transistor, TV velocity modulation transistor (160V, 1.5A) 2SC5511 ! External dim ensions (Units : mm) ! Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVceo = 160V)


    OCR Scan
    2SC5511 150MHz) 2SA2005. O-220FN 100MHz 2SC5511 160V Audio Output Transistor Amplifier 2SA2005 PDF

    2SC5518

    Contextual Info: Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 5


    Original
    2SC5518 75kHz, 2SC5518 PDF

    2SA2005

    Abstract: 2SC5511
    Contextual Info: 2SC5511 Transistors High-voltage Switching Audio output amplifier transistor, TV velocity modulation transistor (160V, 1.5A) 2SC5511 !Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = 160V) 3) High fT. (Typ. 150MHz) 4) Wide SOA (safe operating area).


    Original
    2SC5511 150MHz) 2SA2005. O-220FN 100MHz 2SA2005 2SC5511 PDF

    Contextual Info: Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original
    2SC5517 PDF

    Contextual Info: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original
    2SC5515 PDF

    2SC5513

    Contextual Info: Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type Unit: mm • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current


    Original
    2SC5513 2SC5513 PDF

    2SC5516

    Abstract: 2SC5516 equivalent
    Contextual Info: Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature Storage temperature


    Original
    2SC5516 2SC5516 2SC5516 equivalent PDF

    2SC5515

    Contextual Info: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current


    Original
    2SC5515 2SC5515 PDF

    2SC5519

    Abstract: diode 6A 1000v
    Contextual Info: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V Emitter to base voltage VEBO 5


    Original
    2SC5519 75kHz, 2SC5519 diode 6A 1000v PDF

    2SC5518

    Contextual Info: Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES


    Original
    2SC5518 2SC5518 PDF

    Contextual Info: Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original
    2SC5518 PDF

    2SC5519

    Contextual Info: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES


    Original
    2SC5519 2SC5519 PDF

    2SC5516

    Abstract: 2SC5516 equivalent NPN Transistor VCEO 1000V
    Contextual Info: Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original
    2SC5516 64kHz, 2SC5516 2SC5516 equivalent NPN Transistor VCEO 1000V PDF

    2SC5514

    Contextual Info: Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current


    Original
    2SC5514 2SC5514 PDF

    2SC5515

    Contextual Info: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current


    Original
    2SC5515 2SC5515 PDF

    2SC5510

    Abstract: Hitachi DSA002779
    Contextual Info: 2SC5510 Silicon NPN Triple Diffused Horizntal Deflection Output 1st. Edition April 1998 Preliminary Features ¥ ¥ ¥ High breakdown voltage VCES = 1500 V High speed switching tf = 0.15 sec typ. at fH=64kHz Isolated package TOÐ3PFM Outline TO–3PFM C 2


    Original
    2SC5510 64kHz D-85622 2SC5510 Hitachi DSA002779 PDF

    Contextual Info: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature


    Original
    2SC5519 PDF

    NPN Transistor VCEO 1000V

    Abstract: 2SC5513
    Contextual Info: Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original
    2SC5513 64kHz, NPN Transistor VCEO 1000V 2SC5513 PDF

    2SC5517

    Contextual Info: Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature Storage temperature


    Original
    2SC5517 2SC5517 PDF

    213A

    Abstract: 2SC5515
    Contextual Info: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original
    2SC5515 64kHz, 213A 2SC5515 PDF