2SC551 Search Results
2SC551 Datasheets (44)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2SC551 | Fuji-SVEA | Japanese 2S Transistor Cross Reference Datasheet | Scan | 63.17KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 87.11KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 | Unknown | Basic Transistor and Cross Reference Specification | Scan | 45.78KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 160.77KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 | Unknown | Japanese Transistor Cross References (2S) | Scan | 36.18KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 116.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 | Unknown | Transistor Substitution Data Book 1993 | Scan | 34.52KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 | Unknown | The Japanese Transistor Manual 1981 | Scan | 115.82KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 91.12KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 124.63KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 |
![]() |
Silicon NPN Epitaxial Planar Transistor | Scan | 45.5KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC551 |
![]() |
Japanese Transistor Data Book | Scan | 45.69KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5510 | Unknown | Japanese Transistor Cross References (2S) | Scan | 32KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5511 |
![]() |
High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) | Original | 50.87KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5511 |
![]() |
For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) | Original | 46.54KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5511 | Unknown | Japanese Transistor Cross References (2S) | Scan | 32KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5511 |
![]() |
High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) | Scan | 42.94KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5512 | Unknown | Japanese Transistor Cross References (2S) | Scan | 32KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5513 |
![]() |
Silicon NPN triple diffusion mesa type | Original | 55.13KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5513 |
![]() |
NPN Transistor | Original | 55.87KB | 3 |
2SC551 Price and Stock
2SC551 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature |
Original |
2SC5514 | |
Contextual Info: Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type Unit: mm φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature |
Original |
2SC5513 | |
2sC5517Contextual Info: Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES |
Original |
2SC5517 2sC5517 | |
2SC5514Contextual Info: Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature Storage temperature |
Original |
2SC5514 2SC5514 | |
2SC5511
Abstract: 160V Audio Output Transistor Amplifier 2SA2005
|
OCR Scan |
2SC5511 150MHz) 2SA2005. O-220FN 100MHz 2SC5511 160V Audio Output Transistor Amplifier 2SA2005 | |
2SC5518Contextual Info: Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 5 |
Original |
2SC5518 75kHz, 2SC5518 | |
2SA2005
Abstract: 2SC5511
|
Original |
2SC5511 150MHz) 2SA2005. O-220FN 100MHz 2SA2005 2SC5511 | |
Contextual Info: Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature |
Original |
2SC5517 | |
Contextual Info: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature |
Original |
2SC5515 | |
2SC5513Contextual Info: Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type Unit: mm • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current |
Original |
2SC5513 2SC5513 | |
2SC5516
Abstract: 2SC5516 equivalent
|
Original |
2SC5516 2SC5516 2SC5516 equivalent | |
2SC5515Contextual Info: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current |
Original |
2SC5515 2SC5515 | |
2SC5519
Abstract: diode 6A 1000v
|
Original |
2SC5519 75kHz, 2SC5519 diode 6A 1000v | |
2SC5518Contextual Info: Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES |
Original |
2SC5518 2SC5518 | |
|
|||
Contextual Info: Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature |
Original |
2SC5518 | |
2SC5519Contextual Info: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES |
Original |
2SC5519 2SC5519 | |
2SC5516
Abstract: 2SC5516 equivalent NPN Transistor VCEO 1000V
|
Original |
2SC5516 64kHz, 2SC5516 2SC5516 equivalent NPN Transistor VCEO 1000V | |
2SC5514Contextual Info: Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current |
Original |
2SC5514 2SC5514 | |
2SC5515Contextual Info: Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current |
Original |
2SC5515 2SC5515 | |
2SC5510
Abstract: Hitachi DSA002779
|
Original |
2SC5510 64kHz D-85622 2SC5510 Hitachi DSA002779 | |
Contextual Info: Power Transistors 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature |
Original |
2SC5519 | |
NPN Transistor VCEO 1000V
Abstract: 2SC5513
|
Original |
2SC5513 64kHz, NPN Transistor VCEO 1000V 2SC5513 | |
2SC5517Contextual Info: Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 φ 3.2±0.1 Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature Storage temperature |
Original |
2SC5517 2SC5517 | |
213A
Abstract: 2SC5515
|
Original |
2SC5515 64kHz, 213A 2SC5515 |