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    2SC525 Search Results

    2SC525 Datasheets (69)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC525
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 63.17KB 1
    2SC525
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.69KB 1
    2SC525
    Unknown Transistor Substitution Data Book 1993 Scan PDF 34.5KB 1
    2SC525
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 100.5KB 1
    2SC525
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 124.63KB 1
    2SC525
    Unknown The Japanese Transistor Manual 1981 Scan PDF 107.83KB 2
    2SC525
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.84KB 1
    2SC525
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 87.11KB 1
    2SC525
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 48.54KB 1
    2SC525
    Unknown Japanese Transistor Cross References (2S) Scan PDF 36.21KB 1
    2SC525
    Unknown Cross Reference Datasheet Scan PDF 37.78KB 1
    2SC5250
    Hitachi Semiconductor Silicon NPN Triple Diffused Planar Transistor Original PDF 31.61KB 5
    2SC5250
    Renesas Technology Silicon NPN Triple Diffused Planar Original PDF 37.4KB 6
    2SC5250
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    2SC5250
    Hitachi Semiconductor Silicon NPN Triple Diffused Planar Scan PDF 73.73KB 5
    2SC5250
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 45.31KB 1
    2SC5250
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 200.57KB 2
    2SC5250
    Unknown Japanese Transistor Cross References (2S) Scan PDF 34.4KB 1
    2SC5251
    Hitachi Semiconductor NPN transistor for character display horizontal deflection output application, 1500V, 12A Original PDF 36.77KB 6
    2SC5251
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 45.31KB 1
    SF Impression Pixel

    2SC525 Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation 2SC5250

    TRANSISTOR,BJT,NPN,1.5KV V(BR)CEO,8A I(C),TO-247VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC5250 27
    • 1 $4.50
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $2.25
    Buy Now

    2SC525 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TO SH IB A 2SC5254 <;r s i s TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE MT V a V VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5dB f=2GHz t High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL


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    2sc5254 PDF

    VHF-UHF Band Low Noise Amplifier

    Abstract: 2SC5256F
    Contextual Info: TOSHIBA TENTATIVE 2SC5256F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : |S2lel2= 9.5dB (f=2GHz) 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


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    2sc5256fvhf-uhf band low noise amplifier PDF

    2SC5251

    Abstract: Hitachi DSA00164
    Contextual Info: 2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.2 µsec typ • Isolated package TO-3P•FM (N) Outline TO-3PFM (N)


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    2sc5251d-85622hitachi dsa00164 PDF

    Contextual Info: 2SC5251 Silicon NPN Triple Diffused Planar HITACHI Preliminary Application Character display horizontal deflection output Features • High breakdown voltage VCB0= 1500 V • High speed switching tf = 0.2 psec typ • Isolated package TO-3P»FM (N) Outline


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    2sc5251d-85622 PDF

    Contextual Info: T O SH IB A 2SC5256FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE R9 R f i F T Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain NF = 1.5dB f=2GHz ISoi J 2= 9.5dB (f = 2GHz) 1.2 ± 0.05 u .o = u.uo MAXIMUM RATINGS (Ta = 25°C)


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    2sc5256ft PDF

    Contextual Info: TOSHIBA 2SC5254 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5254 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain 1-0.5 : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2sc5254 PDF

    Contextual Info: TOSHIBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2 .1 ± 0 . 1 • Low Noise Figure : NF = 1.5dB f=2GHz • High Gain : Gain = lOdB (f = 2GHz) . 1.25 ± 0-1 ri 2 MAXIMUM RATINGS (Ta = 25°C)


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    2sc5258 PDF

    2SC5259

    Contextual Info: TOSHIBA 2SC5259 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5259 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) Unit in mm + 0.5 MAXIMUM RATINGS (Ta = 25°C) SYMBOL


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    2sc5259 PDF

    2SC5251

    Abstract: Hitachi DSA0014
    Contextual Info: 2SC5251 Silicon NPN Triple Diffused Planar Application TO–3PFM N Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.2 µsec(typ) • Isolated package TO-3P•FM (N) 1 1. Base


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    2sc5251hitachi dsa0014 PDF

    2SC5255

    Contextual Info: TOSHIBA 2SC5255 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5255 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS • Low Noise Figure : NF = 1.5dB f = 2GHz • High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


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    2sc5255 PDF

    2sc5250

    Contextual Info: HITACHI 2SC5250 -Silicon NPN Triple Diffused Planar Application TO-3PFM N Character display horizontal deflection output Features • High breakdown voltage VCBO= 1500 V • High speed switching tf = 0.2 psec(typ) • Built-in damper diode type • Isolated package


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    2sc52502sc525 PDF

    2SC5258

    Contextual Info: TO SH IBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5dB f = 2GHz • High Gain : Gain = lOdB (f = 2GHz) m a v ì m i im RATiMr;«; SYMBOL CHARACTERISTIC


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    2sc5258 PDF

    transistor H1A

    Abstract: 2SC5256
    Contextual Info: TO SH IBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATION • Unit in mm 1.6 ± 0.2 : NF = 1.5dB f = 2GHz Low Noise Figure ,0.8 ±0.1, • High Gain : Gain = 8.5dB (f = 2GHz) in o O p tr>


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    2sc52560024gtransistor h1a PDF

    2SC5250

    Abstract: 2sc5250 transistor Hitachi DSA00108
    Contextual Info: 2SC5250 Silicon NPN Triple Diffused Planar Application TO–3PFM N Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.2 µsec(typ) • Built-in damper diode type • Isolated package


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    2sc52502sc5250 transistorhitachi dsa00108 PDF

    2sc5250

    Contextual Info: 2SC5250 Silicon NPN Triple Diffused Planar HITACHI Preliminary Application Character display horizontal deflection output Features • High breakdown voltage VCB0= 1500 V • High speed switching tf = 0.2 psec typ • Built-in damper diode type • Isolated package


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    2sc5250d-85622 PDF

    Contextual Info: 2SC5250 Silicon NPN Triple Diffused Planar HITACHI Preliminary Application Character display horizontal deflection output Features • High breakdown voltage V cbo - 1500 V • High speed switching tf = 0.2 jjsec typ • Built-in damper diode type • Isolated package


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    2sc5250 PDF

    Contextual Info: TOSHIBA 2SC5257 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r MT sis7 V M V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.5dB f=2G H z H igh Gain : Gain = lOdB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C) SYM BOL


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    2sc5257 PDF

    2SC5251

    Contextual Info: H ITACH I 2SC5251 -Silicon NPN Triple Diffused Planar Application T O -3 P F M N Character display horizontal deflection output Features • High breakdown voltage VC BO = 1500 V • High speed switching tf = 0.2 jisec(typ) • Isolated package TO-3P*FM (N)


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    2sc5251 PDF

    2SC5256FT

    Contextual Info: TO SH IBA 2SC5256FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain 1.2 ±0 .0 5 : NF = 1.5dB f = 2GHz : |S2iel2—9.5dB (f = 2GHz) 0.8 ± 0.05


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    2sc5256ft0022g PDF

    2SC5255

    Contextual Info: 2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB f = 2 GHz · High gain: Gain = 8.5dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    2sc5255 PDF

    2SC5254

    Contextual Info: 2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB f = 2 GHz · High gain: Gain = 8.5dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    2sc5254 PDF

    2SC5250

    Abstract: TO3PFM
    Contextual Info: SavantIC Semiconductor Product Specification 2SC5250 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·Character display horizontal deflection output applications


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    2sc5250to3pfm PDF

    2SC5258

    Contextual Info: TOSHIBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    2sc5258 PDF

    2SC5252

    Contextual Info: 2SC5252 Silicon NPN Triple Diffused Planar HITACHI Application Character display horizontal deflection output Features • High breakdown voltage VCB0 = 1500 V • High speed switching tf < 0.15 |jsec typ. • Isolated package TO-3P*FM Outline ADE-208-391A (Z)


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    2sc5252ade-208-391a PDF