2SC384 Search Results

NPN transistor mhz s-parameter

Abstract: T62 marking transistor 1047 2SC3841 LEN-160
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3841 is an NPN silicon epitaxial transistor intended for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver.

2SC3840

Contextual Info: NPN SILICON POWER TRANSISTOR 2SC3840 D E S C R IP T IO N The 2SC 3840 is designed fo r use in high speed and high voltage. PAC KAG E D IM E N S IO N S It is suitable fo r switching regulators, DC-DC converters and in m illim ete rs inches ultrasonic appliance applications.

T6360

Contextual Info: SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3841 is an NPN silicon epitaxial transistor intended fo r use as in m illim e te rs UHF oscillators and a UHF mixer in a tuner o f a TV receiver.

FHC30LG

Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3841 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS Units: mm UHF oscillators and a UHF mixer in a tuner of a TV receiver.

2SC3844

Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
Contextual Info: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg

2SC3842

Contextual Info: SavantIC Semiconductor Product Specification 2SC3842 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage ,high speed ·High current capability APPLICATIONS ·For use in TV horizontal output and Power switching applications PINNING

Contextual Info: 2SC3845 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3841 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SC3843

Abstract: 6011s
Contextual Info: F U JI TS U M I C R O E L E C T R O N I C S 31E J> O 374^7^2 D01bb52 QFMI cP January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3843 Silicon High Speed Power Transistor 2SC3843 450V, 10A A BSO LU T E M A X IM U M R A T IN G S Param eter Sym bol

2SC3845

Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 374=17ta 0 ü l b b 3 0 ö O I F M I 31E D T - 3i ' l 3 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3845 Silicon High Speed Power Transistor 2SC3845 800V, 3A ABSOLUTE M AXIMUM RATINGS Parameter Sym bol C onditions

2SC3844

Abstract: 374171 reo4
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range

5011s

Abstract: 2SC3846
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 QOlbbBM S Q F f l l T '3 3-/3 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Temperature Range

2SC3842

Contextual Info: Inchange Semiconductor Product Specification 2SC3842 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed ・High current capability APPLICATIONS ・For use in TV horizontal output and Power switching applications PINNING

2SC3843

Abstract: 2SC3845 2SC3842 2SC3844 2SC3846 2SC3847 2SC3947
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 374=17ta 0 ü l b b 3 0 ö O I F M I 31E D T - 3 i'l3 January 1990 Edition 1.1 FUJITSU P R O D U C T PR O FILE - 2SC3845 Silicon High Speed Power Transistor 2SC3845 800V, 3A A BSO LU T E M A X IM U M R A T IN G S

Contextual Info: 2SC3840 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)600 V(BR)CBO (V)600 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3840

Abstract: VCBo-600V D1845
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistors 2SC3840 NPN 三重拡散形シリコン・トランジスタ 高速度高耐圧スイッチング用 特 外形図（単位：mm） 徴 ○高耐圧です。 VCEO = 600 V ○スイッチングスピードが速い。

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION T h e 2SC 3841 is an NPN silicon ep ita xia l tra n s is to r in te n d e d for use as PACKAGE DIMENSIONS Units: mm U H F o scilla to rs and a U H F m ixer in a tu n e r of a T V receiver.

po102

Abstract: 1401CA1 DIAC ecg6407 ECG6407 ic 565 1401CA3 AL307BM 78l05 sot-23 DZS535-15 AL307
Contextual Info: RF & MICROWAVE TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857

2SC3845

Abstract: 2SC3842 2SC3847 2SC3844 6011s 2SC3843 2SC3846 fujitsu tg h
Contextual Info: 31E J> FUJITSU MICROELECTRONICS O 374^7^2 D01bb52 QFMI cP January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- 2SC3843 Silicon High Speed Power Transistor 2SC3843 450V, 10A A BSO LU T E M A X IM U M R A T IN G S Parameter Sym b ol C onditions Rating U nit -5 5 ~ +150

2SC3843

Abstract: 2SC3846 2SC3842 5011s 2SC3844 2SC3845 2SC3847 2SC3947 2SC3948 2SC3949
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 Q O l b b B M S Q F f l I T~23 cP January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O L U T E MAXIMUM R A T IN G S Parameter

2SC3842

Abstract: 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D a 374R7b5 G01bb2b b SFMI T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2SC3844 450V, 15A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Tem perature Range Junctio n Tem perature

Contextual Info: 2SC3847 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)10 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3846 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)